Dipankar Ghosh

ORCID: 0000-0003-2348-467X
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Microbial Metabolic Engineering and Bioproduction
  • Biofuel production and bioconversion
  • Mass Spectrometry Techniques and Applications
  • Anaerobic Digestion and Biogas Production
  • Microbial Fuel Cells and Bioremediation
  • Dielectric materials and actuators
  • Acoustic Wave Resonator Technologies
  • Ferroelectric and Piezoelectric Materials
  • Nanowire Synthesis and Applications
  • Antimicrobial Peptides and Activities
  • Infant Nutrition and Health
  • Analytical chemistry methods development
  • Radio Frequency Integrated Circuit Design
  • Analytical Chemistry and Chromatography
  • Ion-surface interactions and analysis
  • Advanced ceramic materials synthesis
  • Identification and Quantification in Food
  • High voltage insulation and dielectric phenomena
  • Silicon Carbide Semiconductor Technologies
  • Electromagnetic wave absorption materials
  • Pediatric health and respiratory diseases
  • Enzyme function and inhibition
  • Biochemical and Structural Characterization

3M (United States)
2016-2024

Indian Institute of Engineering Science and Technology, Shibpur
2024

Jawaharlal Nehru University
2009-2023

St.-Antonius-Hospital Gronau
2023

Central Research Institute for Jute and Allied Fibres
2022

Vellore Institute of Technology University
2022

Imperial College London
2017

Thermo Fisher Scientific (United States)
2007-2017

Indian Institute of Technology Kharagpur
2001-2016

Université de Montréal
2009-2015

A tunable third-order combline bandpass filter using thin-film barium-strontium-titanate varactors and fabricated on a sapphire substrate is reported. Application of 0-200-V bias varied the center frequency from 2.44 to 2.88 GHz (16% tuning) while achieving 1-dB bandwidth 400 MHz. The insertion loss 5.1 dB at zero 3.3 full bias, return exceeded 13 over range. intercept was found be 41 dBm.

10.1109/tmtt.2005.854196 article EN IEEE Transactions on Microwave Theory and Techniques 2005-09-01

In this letter, we demonstrate the usefulness of ultralow-power (ULP) junctionless (JL) MOSFETs in achieving improved analog/RF metrics as compared to nonunderlap and underlap MOSFETs. At a drain current ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i> <sub xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> ) 10 μA/μm, JL devices achieve two times higher values cutoff frequency xmlns:xlink="http://www.w3.org/1999/xlink">fT</i> maximum...

10.1109/led.2012.2210535 article EN IEEE Electron Device Letters 2012-09-01

In this feature article, dynamic indentation‐induced deformation and fracture phenomena in brittle solids are related to the behavior patterns evolved during impact on structural ceramics. Examples of localized amorphization boron carbide (B 4 C) differences characteristics due static indentations B C zirconium diboride–silicon (ZrB 2 –SiC) ceramic composite presented. These features compared with high‐velocity ball SiC. The influences processing‐induced (inherent) flaws deformation‐induced...

10.1111/j.1551-2916.2008.02624.x article EN Journal of the American Ceramic Society 2008-09-01

In this paper, we report the potential of junctionless (JL) MOS transistors for ultra low power (ULP) subthreshold logic applications. It is demonstrated that double gate (DG) JL devices, which do not require source or drain extension region engineering, can perform significantly better than conventional inversion mode and comparable with underlap DG MOSFETs ULP Sensitivity analysis shows among all device parameters, devices exhibit least sensitivity to length in comparison MOSFETs. Results...

10.1109/ted.2013.2253324 article EN IEEE Transactions on Electron Devices 2013-04-15

The present strategy proposes a simple and single step aqueous route for synthesizing stable, fluorescent ZnTe/dendrimer nanocomposites with varying dendrimer terminal groups. In these hybrid materials, the fluorescence of semiconductor combines biomimetic properties making them suitable various biomedical applications. ZnTe thus obtained demonstrate bactericidal activity against enteropathogenic bacteria without having toxic effects on human erythrocytes. average size nanoparticles within...

10.1039/c0nr00610f article EN Nanoscale 2011-01-01

The present study was carried out to understand the adaptive strategies developed by Stenotrophomonas maltophilia for chronic colonization of cystic fibrosis (CF) lung. For this purpose, 13 temporally isolated strains from a single CF patient chronically infected over 10-year period were systematically characterized growth rate, biofilm formation, motility, mutation frequencies, antibiotic resistance, and pathogenicity. Pulsed-field gel electrophoresis (PFGE) showed time presence two...

10.3389/fmicb.2016.01551 article EN cc-by Frontiers in Microbiology 2016-09-30

In recent years a significant increase of food fraud has been observed, ranging from false label claims to the use additives and fillers profitability. Recently in 2013 horse pig DNAs were detected beef products sold several retailers. Mass spectrometry (MS) become workhorse protein research, detection marker proteins could serve for both animal species tissue authentication. Meat authenticity is performed this paper using well-defined proteogenomic annotation, carefully chosen surrogate...

10.1080/19440049.2015.1064173 article EN Food Additives & Contaminants Part A 2015-08-04

Due to the internationalisation of food production and distribution, there has been a significant increase fraud in recent years. Food can have serious health implications, it occurs when manufacturers implement unethical practices such as making false label claims well using additives fillers within their products profitability. This concern. Meat adulteration was examined well-defined proteogenomic annotation, carefully selected surrogate tryptic peptides high-resolution mass spectrometry....

10.1080/19440049.2017.1329951 article EN Food Additives & Contaminants Part A 2017-05-17

In this work, we analyze hysteresis and bipolar effects in unipolar junctionless transistors. A change subthreshold drain current by 5 orders of magnitude is demonstrated at a voltage 2.25 V silicon transistor. Contrary to the conventional theory, increasing gate oxide thickness results (i) reduction slope (S-slope) (ii) an increase current, due effects. The high sensitivity film devices will be most crucial factor achieving steep transition from ON OFF state.

10.1063/1.4748909 article EN Applied Physics Letters 2012-08-27

In this work, we report on the single transistor latch phenomenon in junctionless transistors. condition, device is unable to turn-off despite a reduction gate bias. It shown that impact ionization induced condition can occur due an increase drain bias, silicon film thickness, oxide and doping concentration. The explained terms of generation–recombination rates, electrostatic potential, electric field distribution product current density (J·E). As undesirable for dynamic memory applications,...

10.1063/1.4803879 article EN Journal of Applied Physics 2013-05-09
Coming Soon ...