Using an electrochemically gated transistor, we achieved controlled and reversible doping of poly(p-phenylene vinylene) in a large concentration range. Our data open wide energy-window view on the density states (DOS) show, for first time, that core DOS function is Gaussian, while low-energy tail has more complex structure. The hole mobility increases by than 4 orders magnitude when electrochemical potential scanned through DOS.

The factors contributing to the large overpotential with respect flatband potential required for hydrogen evolution and certain redox reactions at illuminated p‐type electrodes of various III–V compounds have been investigated. Results photoelectrochemical studies, involving minority carrier transfer systems in electrolyte, indicate that surface states acting as recombination centers are important. Thin‐slice measurements a p‐n junction show velocity interface is indeed very high, even...

A SiC way to split water: Illuminated p-type 4H-SiC, as a photocathode short-circuited Pt, was found water (see picture). The hydrogen generated is stored considerable extent in the solid. Detailed facts of importance specialist readers are published "Supporting Information". Such documents peer-reviewed, but not copy-edited or typeset. They made available submitted by authors. Please note: publisher responsible for content functionality any supporting information supplied Any queries (other...

When p-type silicon is contacted to a noble metal in HF solution containing an oxidizing agent, galvanic cell can be formed. The agent reduced at the and semiconductor etched. To achieve similar effect with n-type silicon, illumination required. On other hand, formed both n- silicons alkaline dark. These results are explained on basis of electrochemistry use energy band diagrams. It shown that "galvanic etching" used control surface morphology, e.g., form microporous or macroporous layers...

Surface polarity plays a significant role in chemical etching of GaN KOH solution, process that is important for quality control and device fabrication. In this work, basic mechanisms are proposed to explain the surface orientation semiconductor. addition, it shown how prior photoetching inert surfaces [the polar (0001), semipolar (101̅1̅), nonpolar (11̅00) interfaces] enables etching. Photoetching gives rise formation nanocolumns on dislocations protrusions nanoscale inhomogeneities....

ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTReactions involving electron transfer at semiconductor surfaces. I. Dissociation of nitrous oxide over n-type semiconductors 20.deg.Joseph Cunningham, John J. Kelly, and A. L. PennyCite this: Phys. Chem. 1970, 74, 9, 1992–2000Publication Date (Print):April 1, 1970Publication History Published online1 May 2002Published inissue 1 April 1970https://pubs.acs.org/doi/10.1021/j100704a029https://doi.org/10.1021/j100704a029research-articleACS...

We report the incorporation of zinc atoms into vapor-liquid-solid grown indium phosphide nanowires via a gold catalyst particle. demonstrate this by synthesizing axial pn-junctions, chemically etching them, and fabricating electrical contacts in vertical configuration. Electrical measurements show clear diode behavior. Control dopant is crucial for future applications will eventually lead to full freedom design.

The epitaxial lift-off (ELO) process is utilized to produce thin-film III-V devices, while the substrate (GaAs wafer) on which structure was grown can be reused. However, so far direct reuse of these GaAs wafers inhibited by remnants wafer surface that cannot removed in a straightforward fashion utilizing general cleaning methods. Therefore, etching hydrofluoric acid investigated microscopic techniques, profilometry and X-ray photoelectron spectroscopy. It found immediately after covered...

Three types of experiments were used to study the surface chemistry silicon in alkaline solution: minority carrier injection from a p−n junction electrode, in-situ photoluminescence, and electron transfer redox system solution. The results lead conclusion that electrochemistry are determined large extent by an activated intermediate chemical etching reaction with water. This novel coupling electrochemical steps can account for some unusual features system, such as mechanism anodic oxidation...

The electrochemical oxidation and passivation of Si(100) Si(111) electrodes in KOH solution was studied by potentiodynamic potential-step measurements. Striking differences were observed between the surfaces. A comparison results for n- p-type led us to conclude that silicon alkaline must be triggered a chemical reaction. strong influence temperature on current-potential current-time (111) surfaces supports importance activation. Photocurrent experiments n-type show oxide nucleation is...

The photoelectrochemistry of silicon carbide in alkaline solution was investigated with a view to wet-chemical etching applications. Anodic dissolution and passivation the p-type semiconductor observed dark; illumination supra-bandgap light required for oxidation n-type electrode. At low KOH concentrations intensities, diffusion-controlled is SiC. We show that open-circuit photoetching can be used defect revealing. Furthermore, based on electrochemical properties silicon, we expect various...

We describe a test chip for pipelined, multihit time to digital converter, capable of operating in common stop mode, with double hit resolution approximately 10 nanoseconds, maximum range microseconds and least count 50 picoseconds. This is constructed standard CMOS process using novel application the Vernier principle. The demonstrates this application. device has many potential applications high energy nuclear physics experiments, as well other fields research. present results measurements...

In the present work a so-called diffusion and reaction related model (DR model) is derived based on notion that overall etch rate in epitaxial lift-off (ELO) process determined both by of hydrofluoric acid to front its subsequent process. contrast was previously described literature, DR yields rates which are quantitative agreement with those obtained experimentally. order verify model, ELO release layers as function phosphorus percentage, layer thickness temperature. accordance it shown...

The dissolution and recombination processes at the interface have been studied with electrical opto‐electrical impedance methods. It has found that intermediates can act as centers thermal excitation of electrons from these to conduction band occur. In case it is shown modulation light intensity results in a modulation, not only minority carrier concentration, but also majority concentration. As consequence, value for Helmholtz capacitance could be determined results.

The design of a high speed electron-beam lithography column is described. Designed for use with raster scan system, the produces beam current 600 nA in an 0.5 μm round spot, and has deflection field 5 mm2. uses zirconiated thermal emission cathode, two magnetic lenses, intermediate cross-over blanking purposes, two-stage electrostatic producing both precision. compatible 300 MHz pixel exposure rate accuracy better than ±0.125 (2σ).

ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTEquilibriums in pyridine. I. Determination of absolute pK values several uncharged acids and investigation a few typical acid-salt mixturesLal M. Mukherjee, John J. Kelly, William Baranetzky, Jerry SicaCite this: Phys. Chem. 1968, 72, 10, 3410–3415Publication Date (Print):October 1, 1968Publication History Published online1 May 2002Published inissue 1 October...

An investigation of the surface chemistry In0.53Ga0.47As in HCl/H2O2 solution for etching low etch rate range (<0.1–10 nm min−1) is described. Kinetic studies using inductively coupled plasma - mass spectrometry showed a surprizing result: decreased with increasing chloride concentration, suggesting chlorine termination surface. This was confirmed by determination relative coverage total reflection X-ray fluorescence. These results are supported contact angle measurements and oxide analysis...