A5084792431- 2D Materials and Applications
- Semiconductor materials and devices
- MXene and MAX Phase Materials
- Advanced Neural Network Applications
- Electronic and Structural Properties of Oxides
- Turbomachinery Performance and Optimization
- Semiconductor materials and interfaces
- Domain Adaptation and Few-Shot Learning
- Synthesis and biological activity
- Landslides and related hazards
- Advanced Photocatalysis Techniques
- Graphene research and applications
- Integrated Circuits and Semiconductor Failure Analysis
- High-pressure geophysics and materials
- Combustion and flame dynamics
- Video Surveillance and Tracking Methods
- Ferroelectric and Negative Capacitance Devices
- Refrigeration and Air Conditioning Technologies
- Crystal structures of chemical compounds
- Fluid Dynamics and Turbulent Flows
- Robotics and Sensor-Based Localization
- Molecular Sensors and Ion Detection
- Multimodal Machine Learning Applications
- earthquake and tectonic studies
- Advanced Image and Video Retrieval Techniques
The University of Texas at Dallas
2019-2025
Shandong University of Science and Technology
2021-2025
Heilongjiang University
2023-2025
Southwest Jiaotong University
2023-2024
Nanjing University
2022-2023
Huawei Technologies (Canada)
2023
Nankai University
2017-2022
Zhejiang University
2020-2022
Jiamusi University
2022
Pennsylvania State University
2020
Contact engineering on monolayer layer (ML) semiconducting transition metal dichalcogenides (TMDs) is considered the most challenging problem toward using these materials as a transistor channel in future advanced technology nodes. The typically observed strong Fermi-level pinning induced part by reaction of source/drain contact and ML TMD frequently results large Schottky barrier height, which limits electrical performance field-effect transistors (FETs). However, at microscopic level,...
The assembly shows the structural transformation from a multiple species mixture Eu 2 (LR) n to helicate 4 upon increasing content of CHCl 3 in CH CN, which was accompanied by an enhanced CPL activity.
Tungsten transition metal dichalcogenides (W-TMDs) are intriguing due to their properties and potential for application in next-generation electronic devices. However, strong Fermi level (EF) pinning manifests at the metal/W-TMD interfaces, which could tremendously restrain carrier injection into channel. In this work, we illustrate origins of EF Ni Ag contacts on W-TMDs by considering interface chemistry, band alignment, impurities, imperfections W-TMDs, contact adsorption mechanism,...
The high contact resistance of transition metal dichalcogenide (TMD)-based devices is receiving considerable attention due to its limitation on electronic performance. mechanism Fermi level (EF) pinning, which causes the resistance, not thoroughly understood date. In this study, (Ni and Ag)/Mo-TMD surfaces interfaces are characterized by X-ray photoelectron spectroscopy, atomic force microscopy, scanning tunneling microscopy density functional theory systematically. Ni Ag form covalent van...
High contact resistance of transition-metal dichalcogenide (TMD)-based devices is one the bottlenecks that limit application TMDs in various domains. Contact TMD-based strongly related to interface chemistry and band alignment at metal/TMD interfaces. To understand metal/MoS2 alignment, Ni Ag metal contacts are deposited on MoS2 bulk chemical vapor deposition bilayer (2L-MoS2) film samples under ultrahigh vacuum (∼3 × 10–11 mbar) high 10–6 conditions. X-ray photoelectron spectroscopy used...
Molybdenum disulfide, a two-dimensional transition metal dichalcogenide, was analyzed using in situ x-ray photoelectron spectroscopy (XPS). The XPS spectra obtained from fresh surface which exfoliated and annealed ultrahigh vacuum include survey scan, high resolution of O 1s, C Mo 3d, S 2s, 2p, 3p, 4p, 3s, the valence band. Quantitative analysis indicates sulfur deficient composition MoS1.8, impurities were below detection limit.
Abstract Two-dimensional (2D) semiconductors have received a lot of attention as the channel material for next generation transistors and electronic devices. On other hand, insulating 2D gate dielectrics, possible materials dielectrics in transistors, little attention. We performed an experimental study on bismuth oxychloride, which is theoretically proposed to good dielectric properties. High-quality oxychloride single crystals been synthesized, their high crystallinity spatial homogeneity...
A scalable platform to synthesize ultrathin heavy metals may enable high-efficiency charge-to-spin conversion for next-generation spintronics. Here, we report the synthesis of air-stable, epitaxially registered monolayer Pb underneath graphene on SiC (0001) by confinement heteroepitaxy (CHet). Diffraction, spectroscopy, and microscopy reveal that CHet-based intercalation predominantly exhibits a mottled hexagonal superstructure due an ordered network Frenkel-Kontorova-like domain walls. The...
The interface properties and thermal stability of bismuth (Bi) contacts on molybdenum disulfide (MoS
Multi-exit architectures, in which a sequence of intermediate classifiers are introduced at different depths the feature layers, perform adaptive computation by early exiting ``easy" samples to speed up inference. In this paper, novel Harmonized Dense Knowledge Distillation (HDKD) training method for multi-exit architecture is designed encourage each exit flexibly learn from all its later exits. particular, general dense knowledge distillation objective proposed incorporate possible...
The energy band offsets between indium–gallium–zinc oxide (IGZO) and β-Ga2O3 were examined by angle-resolved X-ray photoelectron spectroscopy (AR-XPS). Ga 2p spectra from the heterojunction contributed upper IGZO film substrate deconvoluted into two sub-peaks with binding difference of 0.3 eV, in good agreement theoretical model. Meanwhile, bandgaps measured to be 3.44 ± 0.1 4.64 eV ultraviolet–visible (UV–vis) transmittance spectra. valence conduction consequently determined 0.49 0.05 0.71...
This work offers a pathway to increase the combustion efficiency and reduce pollutant emissions for homogeneous charge autoignition (HCAI) mode of combustion. The emission characteristics n-heptane–PODE3–ethanol mixtures were measured under constant volume conditions at pressure 2.703 MPa equivalence ratio 0.4–1.0. fuel reactivity was varied by changing blending high cetane number octane fuel. main results are summarized below: First, should be adjusted according improve load adaptability....
Gallium oxide (β-Ga2O3) is becoming a popular material for high power electronic devices due to its wide bandgap and ease of processing. In this work, β-Ga2O3 substrates received various annealing treatments before atomic layer deposition HfO2 subsequent fabrication metal–oxide–semiconductor (MOS) capacitors. Annealing with forming gas or nitrogen produced degraded capacitance–voltage (C–V) behavior compared control sample no annealing. A annealed pure oxygen had improved C–V characteristics...
The rapid advancement of artificial intelligence (AI) techniques has opened up new opportunities to revolutionize various fields, including operations research (OR). This survey paper explores the integration AI within OR process (AI4OR) enhance its effectiveness and efficiency across multiple stages, such as parameter generation, model formulation, optimization. By providing a comprehensive overview state-of-the-art examining potential transform OR, this aims inspire further innovation in...
4-Benzoyl-3-methyl-1-phenyl-5-pyrazolone (HPMBP) was synthesized via the Friedel–Crafts reaction and characterized through 1H NMR spectroscopy, Infrared spectroscopy Electrospray ionization time-of-flight(ESI-TOF). The Cu(II) Zn(II) coordination complexes, namely, [Cu(HPMBP)(2,2′-bpy)(Cl)]·H2O(1) [Zn(HPMBP)(2,2′-bpy)(Cl)]·H2O(2), were in CH3OH(HPMBP:2,2′-bipyridine:M = 1:1:1, M Cu, Zn). Single crystal X-ray diffraction(SCXRD) studies show that exhibit a distorted square pyramidal...
This paper addresses the problem of ranking pre-trained models for object detection and image classification. Selecting best model by fine-tuning is an expensive time-consuming task. Previous works have proposed transferability estimation based on features extracted models. We argue that quantifying whether target dataset in-distribution (IND) or out-of-distribution (OOD) important factor in estimation. To this end, we propose ETran, energy-based assessment metric, which includes three...