A5021617298- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Silicon and Solar Cell Technologies
- Semiconductor materials and devices
- Semiconductor Lasers and Optical Devices
- Photonic and Optical Devices
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices
- Optical Coatings and Gratings
- Advanced Fiber Laser Technologies
- ZnO doping and properties
- Integrated Circuits and Semiconductor Failure Analysis
- Glass properties and applications
- Gold and Silver Nanoparticles Synthesis and Applications
- Solid State Laser Technologies
- Phase-change materials and chalcogenides
- Laser-Matter Interactions and Applications
- Laser Material Processing Techniques
- Ion-surface interactions and analysis
- Transition Metal Oxide Nanomaterials
- Advanced Fiber Optic Sensors
- Cold Atom Physics and Bose-Einstein Condensates
- Nanofabrication and Lithography Techniques
- Plasmonic and Surface Plasmon Research
- GaN-based semiconductor devices and materials
HUN-REN Centre for Energy Research
2016-2025
Institute for Technical Physics and Materials Science
2012-2025
Hungarian Academy of Sciences
2009-2019
HUN-REN Research Centre for Natural Sciences
2012-2019
Energy Institute
2004
HUN-REN Institute for Nuclear Research
2002
Philipps University of Marburg
1988
Max Planck Society
1987
Max Planck Institute for Solid State Research
1986-1987
In this study, we propose simple analytical formulas for reactive sputtering technology, which can be used to assist in the selection of appropriate parameters during deposition thin films. Radio frequency (RF) sputtered alumina (Al2O3) was evaluate results. Layers with O/Al ratios ranging from 24/76 54/73 were deposited. Following effective deposition, equations Berg model describing process studied. The achieved stoichiometry and associated technological are critical importance analysis...
A Gires–Tournois interferometer has been applied for intracavity chirp compensation of an actively mode-locked GaAs laser. Fourier-transform-limited pulses as short 4.6 psec have obtained at 790 nm.
Reactive sputtering of silicon nitride was used to prepare single layer antireflection coating on one the facets a semiconductor laser. During deposition film thickness controlled with two different methods. In first case laser driven below its threshold current, and light emitted from facet being coated thickness. second lasing mode rear directed detector via an interference filter monitor decay light. The residual reflectivity achieved 10−4.
Abstract Al 2 O 3 (5 nm)/Si (bulk) sample was subjected to irradiation of 5 keV electrons at room temperature, in a vacuum chamber (pressure 1 × 10 −9 mbar) and formation amorphous SiO around the interface observed. The oxygen for silicon dioxide growth provided by electron bombardment induced bond breaking subsequent production neutral and/or charged oxygen. rich layer has grown into showing that as well transport occurred during temperature. We propose both transports are mediated local...
Abstract The optical parameters of hydrogenated amorphous a- $$\hbox {Si}_{1-x}\,\hbox {Ge}_{{x}}$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mtext>Si</mml:mtext> <mml:mn>1</mml:mn> <mml:mo>-</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:mspace/> <mml:mtext>Ge</mml:mtext> </mml:math> :H layers were measured with focused beam mapping ellipsometry for photon energies from 0.7 to 6.5 eV. applied single-sample micro-combinatorial technique...
The pulse width of an actively mode-locked GaAs/AlGaAs laser diode in external cavity configuration is continuously decreased from 22 to 7 ps by tuning the wavelength gain maximum close high-energy cutoff profile. This wavelength-dependent shortening can be explained dynamics excited electron-hole plasma.
Abstract Hydrogenated multilayers (MLs) of a-Si/a-Ge have been analysed to establish the reasons H release during annealing that has seen bring about structural modifications even up well-detectable surface degradation. Analyses carried out on single layers a-Si and a-Ge show is released from its bond host lattice atom it escapes layer much more efficiently in than because smaller binding energy H-Ge probably a greater weakness Ge lattice. This should support previous hypothesis degradation...
In this work, amorphous hydrogen-free silicon nitride (a-SiNx) and hydrogenated (a-SiNx:H) films were deposited by radio frequency (RF) sputtering applying various amounts of hydrogen gas. Structural optical properties investigated as a function concentration. The refractive index 1.96 was characteristic for SiNx thin film with increasing H2 flow it decreased to 1.89. hydrogenation during the process affected porosity compared SiNx. A higher is consistent lower index. Fourier-transform...
In a single process run, an amorphous silicon oxynitride layer was grown, which includes the entire transition from oxide to nitride. The variation of optical properties and thickness characterized by Spectroscopic Ellipsometry (SE) measurements, while elemental composition investigated Energy Dispersive Spectroscopy (EDS). It revealed that refractive index at 632.8 nm is tunable in 1.48-1.89 range varying oxygen partial pressure chamber. From data layer, typical physical parameters were...
Differently hydrogenated radio frequency-sputtered a-Si layers have been studied by infrared (IR) spectroscopy as a function of the annealing time at 350°C with aim to get deeper understanding origin blisters previously observed us in a-Si/a-Ge multilayers prepared under same conditions ones applied present layers. The H content varied between 10.8 and 17.6 at.% measured elastic recoil detection analysis. IR showed that concentration clustered (Si-H)n groups (Si-H2)n (n ≥ 1) polymers...
Gradient a-Si1−xGex layers have been deposited by ”one-sample concept” combinatorial direct current (DC) magnetron sputtering onto one-inch-long Si slabs. Characterizations electron microscopy, ion beam analysis and ellipsometry show that the are amorphous with a uniform thickness, small roughness compositions from x = 0 to 1 changing linearly lateral position. By focused-beam mapping ellipsometry, we optical constants also vary position, implying linear functions of composition. Both...