A5053957941- Semiconductor Quantum Structures and Devices
- Advanced Semiconductor Detectors and Materials
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Chalcogenide Semiconductor Thin Films
- Infrared Target Detection Methodologies
- Silicon Nanostructures and Photoluminescence
- Calibration and Measurement Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Surface and Thin Film Phenomena
- Silicon and Solar Cell Technologies
- Quantum Dots Synthesis And Properties
- Photonic and Optical Devices
- Quantum and electron transport phenomena
- Advancements in Battery Materials
- Thermography and Photoacoustic Techniques
- Advancements in Semiconductor Devices and Circuit Design
- Solidification and crystal growth phenomena
- Spectroscopy and Laser Applications
- Geotechnical and Geomechanical Engineering
- GaN-based semiconductor devices and materials
- Computational Fluid Dynamics and Aerodynamics
- Nanowire Synthesis and Applications
- Earthquake Detection and Analysis
- Laser Design and Applications
Institute of Semiconductor Physics
2014-2023
Russian Academy of Sciences
2009-2022
Siberian Branch of the Russian Academy of Sciences
2017
We analyzed the C-V curves of CdхHg1-хTe-based (x ∼ 0.22) MIS structures with Al2O3 as an insulator. Alumina films were deposited on p and n type CdхHg1-хTe by atomic layer deposition. curve specific features at high low frequencies found to be a result semiconductor-dielectric interface surface state influence. The density was derived from fitting experimental theoretical model. calculated obtained solving Poisson continuity equations within drift-diffusion charge exchange between states...
The influence of electron energy quantization in a space-charge region on the accumulation capacitance InAs-based metal-oxide-semiconductor capacitors (MOSCAPs) has been investigated by modeling and comparison with experimental data from Au/anodic layer(4-20 nm)/n-InAs(111)A MOSCAPs. for MOSCAPs calculated solution Poisson equation different assumptions self-consistent Schrödinger equations taken into account. It was shown that during calculations should be consideration correct interface...
In this letter, we present structural, compositional, and electrical characteristics of anodic oxide layer-based metal-oxide-semiconductor (MOS) capacitors on n-type InAs(111)A, along with the effect a thin fluorinated interfacial passivation layer. Electrochemical oxidation in acid electrolyte addition fluorine (NH4F) led to formation oxygen free well-ordered wide gap layer at InAs(111)A fixed charge (Qfix) density interface states (Dit) range (4–6) × 1010 cm−2 (2–12) eV−1 cm−2,...
Abstract Electrophysical properties of multilayered heteroepitaxial structures Hg 1‐x Cd x Te with x=0.3‐0.4 grown by molecular beam epitaxy on silicon substrates are presented. The passivating effect thin CdTe layers top the in single process is demonstrated. Comparison between experimental and theoretical temperature dependencies reverse currents n‐on‐p p‐on‐n diodes fabricated boron arsenic ion implantation vacancy‐doped p‐type In‐doped n‐type films, respectively, influence p‐n junction...
Tunneling in boron-doped p-type silicon-insulator-semiconductor (MIS) tunnel junctions is studied at low temperatures by measuring the second derivative (d2I/dU2) of current—voltage characteristics as function applied bias voltage (U). The vibrational spectra thermal silica (thickness ≈ 2 nm) and silicon nitride 3 studied. [Russian Text Ignored].
Capacitance--voltage characteristics of metal dielectric semiconductor structures with atomic layer deposition Al 2 O 3 on n- and p-Cd 0.22 Hg 0.78 Te (with without a surface graded-gap layer) preliminary oxidized in oxygen glow discharge plasma the resulting oxide thickness nm) have been studied. The obtained reveal positive fixed charge density ~(1-6)·10 11 cm -2 . ratio between slow states band gap width is almost independent presence, value ~(4-8)·10 ·eV -1 proposed passivation approach...
The focal plane array (IR FPA) on the basis of metal-insulator-structure (MIS) photodetectors InAs auto-epitaxial substrate ol 8x8 elements is designed and fabricated. It shown, that IR FPA provides definition coordinate time arrival optical pulse signals with energy 8x10<sup>-17</sup> J/element accuracy not worse 100 ns.