Flexible low-voltage indium-gallium-zincoxide (IGZO) electric-double-layer transistors are fabricated on polyethylene terephthalate substrates at room temperature and proposed for energy-efficient artificial synapse application. The IGZO channel conductance the gate voltage pulse regarded as synaptic weight spike, respectively. energy consumption of our transistor is estimated to be low ~0.23 pJ/spike. Short-term plasticity high-pass filtering behaviors also mimicked in an individual transistor.

In the human brain, synapses are crucial connective parts between neurons, which endow neurons with significant computational abilities. Here, indium-zinc-oxide (IZO) based flexible synaptic transistors fabricated on a plastic substrate by simple self-assembly method. Proton conducting phosphorus-doped nanogranular SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> electrolyte is used as gate dielectric. Excitatory postsynaptic current,...

The interface between the electrochromic (EC) electrode and ionic conductor is crucial for high-performance extraordinarily stable EC devices (ECDs). Herein, effect of ALD–AZO interfacial layer on performance WO3 thin film was examined, revealing that an introduction to Al3+-based complementary ECDs can lead improved stability, such as extraordinary cyclability more than 20,000 cycles, outstanding coloration efficiency 109.69 cm2 C–1, a maximum transmittance modulation 63.44%@633 nm....

WO3 with nanocrystal-in-glass (nanocrystal-embedded amorphous matrix) characteristics is recognized as a highly promising electrochromic material. The demand for flexible and large-area technologies pushing the advancement of low-temperature large-scale processes thin films. This study presents functional ink designed preparation films using blade-coating technology, enabling scalable cost-effective production. optimized WO3:Ti-PEDOT hybrid film demonstrates high light modulation rate 86.05%...

Indium-zinc-oxide (IZO)-based electric double layer (EDL) transistors gated by solution-processed chitosan electrolyte films are fabricated on glass substrates and used for mimicking synaptic plasticity. The conductance of the self-assembled IZO channel tuned proton electrostatic modulation electrochemical doping is regarded as weight. Synaptic behaviors like paired-pulse facilitation long-term potentiation mimicked in chitosan-gated IZO-based EDL transistor. Our results suggest that gate...

Classical conditioning, a fundamental property in associative learning, has aroused wide range of interests neuromorphic engineering. Here, junctionless indium-zinc-oxide (IZO)-based electric-double-layer transistors gated by nanogranular SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> proton conducting electrolyte films are proposed to mimic such behavior. Proton-related electrochemical doping can result evident oxygen vacancy IZO...

Aluminum tungsten bronze (AlxWO3) as the core layer for optical modulation is of great significance to electrochromic (EC) devices. Compared with other EC properties, there remains a vacancy in study constants AlxWO3. Herein, tunable AlxWO3 layers under varying potentials are investigated via spectroscopic ellipsometer. Our findings indicate that terms constants, exhibits greater over more extensive voltage range and has better ability than HxWO3 LixWO3. With generation AlxWO3, WO3 thin...

As one of the most important human health indicators, respiratory status is an basis for diagnosis many diseases. However, high cost monitoring makes its use uncommon. This study introduces a low-cost, wearable, flexible humidity sensor monitoring. Solution-processed chitosan (CS) placed on polyethylene terephthalate substrate was used as sensing layer. An Arduino circuit board to read humidity-sensitive voltage changes. The CS-based demonstrated capacitive sensitivity, whereby capacitance...

Flexible low-voltage transparent junctionless thin-film transistors (TFTs) with oxygen-tuned indium-zinc-oxide (IZO) active layers are fabricated on polyethylene terephthalate plastic substrates at room temperature only one shadow mask. IZO films deposited in gradient oxygen ambient used as the channel and source/drain electrodes without any junction. High performance a low subthreshold swing of 0.13 V/decade high drain current ON/OFF ratio 106 obtained both flat curving states. A...

Three-dimensional nanoporous zeolite films with Linde Type A (LTA) structure prepared by a seeding-free synthesis strategy exhibited high room-temperature proton conductivity and large electric-double-layer (EDL) capacitance. In-plane-gate indium-zinc-oxide thin-film transistors gated such conducting LTA were fabricated simple self-assembled method. Due to the strong EDL capacitive coupling triggered mobile protons in LTA, showed low-voltage operation of 1.5 V performance field-effect...

Low-voltage (1.5 V) indium zinc oxide (IZO)-based electric-double-layer (EDL) thin-film transistors (TFTs) gated by nanogranular proton conducting SiO2 electrolyte films are fabricated on paper substrates. Both enhancement-mode and depletion-mode operation obtained tuning the thickness of IZO channel layer. Furthermore, such flexible protonic/electronic hybrid EDL TFTs can be used as artificial synapses, synaptic stimulation response short-term plasticity function demonstrated. The...

Electric-double-layer oxide-based thin-film transistors gated by nanogranular SiO2 solid electrolyte have been fabricated at room temperature. The effects of humidity on performances are investigated. At the relative 65 %, measured capacitance is 10 μF/cm2, and device shows Ion/off ratio 8.93 × 107, field-effect mobility 5.9 cm2/Vs. As declines, decreases, which gives rise to degradation in performance. Especially, 0 0.01 μF/cm2 measured, so cannot be turned off. reason may that can promote...

A gradient shadow-mask diffraction method is proposed for the fabrication of junctionless indium-tin-oxide (ITO) and indium-zinc-oxide (IZO) thin-film transistors (TFTs) with different channel thicknesses on one glass substrate during one-batch radio-frequency magnetron sputtering. The operation mode saturation field-effect mobility room-temperature-processed oxide-based TFTs are thickness dependent, threshold voltages shift from negative to positive when self-assembled reduced a critical thickness.

The solution-processed sodium-alginate (SA) films, with nanoporous/nanochannel microstructure, possess a total absorbed water number of 10420 ± 395 molecules per square nanometer, which gives rise to high proton conductivity 4.0 × 10−4 S cm−1. When SA films used as gate dielectric in the thin film transistors, electric-double-layer (EDL) would be formed whether at dielectric/channel or dielectric/gate electrode interface, leading huge specific capacitance and low operating voltage for TFTs....

A laser-scribing process without any mask and photolithography is developed for transparent junctionless oxide based in-plane-gate thin-film transistor (TFT) fabrication at room temperature. Such TFTs feature that the channel source/drain electrodes are of same thin indium-zinc-oxide films. Good electrical performance with an I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> /I xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> ratio...

Porous silicon dioxide (SiO 2 ) solid‐electrolyte was prepared by the plasma enhanced chemical vapour deposition (PECVD) method using silane and oxygen as reactive gases. The resistive switching characteristics of ∼280 nm‐thick porous SiO ‐based electrochemical metallisation memory cells were investigated. SEM TEM images showed that PECVD‐deposited film composed nanogranular particles with a plenty nano‐channels. electrical measurements silver/porous /indium tin oxide vertical exhibited good...

Lateral inhibition is one of the basic principles information processing in nervous system, which exists various sensory systems from touch to vision. Here, synaptic transistors with lateral gates were fabricated on plastic substrate. Negative gate voltage can depress channel current was used emulate inhibition. Influences light-induced and electric-induced characteristics investigated. Experiments demonstrated that our devices, enhance paired pulse facilitation (PPF) gain ratio, amplify...

Junctionless electric-double layer (EDL) transistors with gradient oxygen modulated IZO layers are proposed to emulate the biological synapse. The threshold voltage of junctionless EDL is shifted from - 0.40 V 0.48 as increasing partial pressure during deposition. And estimated energy consumption an individual excitatory post-synaptic current (EPSC) synaptic process can be reduced when positively. Short-term plasticity (STP) and long-term potentiation (LTP) also demonstrated in such...

Abstract Indium–tin-oxide (ITO)-based thin-film transistors (TFTs) were fabricated using porous SiO 2 deposited by plasma-enhanced chemical vapor deposition and Al O 3 atomic layer as dielectrics. The results showed that the film exhibited a high electric-double-layer (EDL) capacitance. Devices gated EDL dielectric drain current on/off ratio of &gt;10 6 low operation voltage &lt;2.0 V in dark. When illuminated 254 nm UV light, ITO-based TFTs single displayed weak photo-responses. However,...

We describe the lateral-coupled junctionless indium-zinc-oxide (IZO) thin-film transistors (TFTs) in which there are no junctions between channel and source/drain electrodes with solid-state phosphosilicate glass electrolyte (PSG) gating. Due to three-dimensional high proton conduction lateral coupled electric-double-layer (EDL) capacitance (>1 μF/cm2) of PSG, low voltage (2.0 V) IZO TFTs dual coplanar gate devices obtained. An AND logic function is demonstrated on basis EDL-TFTs. Such...

Fully transparent InZnO thin‐film transistors (TFTs), with either a bottom gate or an in‐plane device structure, were fabricated using the solution‐processed SA proton conducting films as dielectrics. The self‐assembled channel different thickness by gradient shadow mask was during same batch radio‐frequency magnetron sputtering. threshold voltage can be modulated from −0.25 to +0.12 V and −0.07 +0.25 layer variations for vertically‐coupled laterally‐coupled TFTs, respectively. Accordingly,...

Flexible protonic/electronic hybrid rectifying devices gating by chitosan electrolyte were fabricated on polyethylene terephthalate (PET) substrate. indium zinc oxide (IZO) source/drain electrodes with a self‐assembled IZO channel prepared RF sputtering nickel shadow mask. The was modified coupling and drain current ( I D ) exhibited characteristics short connecting source electrode bottom tin (ITO) film. Such used to mimic inhibitory synapses. Synaptic behaviours, like paired‐pulse...