A5101739363- Chalcogenide Semiconductor Thin Films
- Semiconductor Quantum Structures and Devices
- solar cell performance optimization
- Photonic and Optical Devices
- Advanced Fiber Optic Sensors
- Advanced Memory and Neural Computing
- Photovoltaic System Optimization Techniques
- Advanced X-ray and CT Imaging
- Thin-Film Transistor Technologies
- Conducting polymers and applications
- Optical Systems and Laser Technology
- Optical Network Technologies
- Radiation Detection and Scintillator Technologies
- Advanced Semiconductor Detectors and Materials
- Perovskite Materials and Applications
- Advanced Photonic Communication Systems
- Optical Wireless Communication Technologies
- Silicon and Solar Cell Technologies
- Quantum Dots Synthesis And Properties
- Semiconductor Lasers and Optical Devices
- Electrocatalysts for Energy Conversion
Tianjin University of Technology
2021
China Electronics Technology Group Corporation
2019
Suzhou Institute of Nano-tech and Nano-bionics
2010-2016
Chinese Academy of Sciences
2016
Zhejiang University
2014
Institute of Semiconductors
2010
Tsinghua University
2001
An interpenetrating iodine-doped-Sb2Se3/Cu2GeSe3 heterojunction network has been fabricated by controlling the crystallization of a chalcogenide glass. These two crystals absorb strongly and widely solar spectrum for efficient charge photo-generation, formed these greatly promotes separation. More importantly, free carriers can be efficiently transported through conductive channels oriented Cu2GeSe3 nanoparticles aggregated between Sb2Se3 rods. The photo-electrochemical measurement shows...
A stable reproducible optical standard source for measuring multimode fiber attenuation is required as recent round robin measurements of such fibers at several international companies and national standards organizations showed significant variation when using a having only the encircled flux in near field emerging from it defined. The paper presents compares far modal power distributions (i) 2 km 3 step-index Hard Plastic Cladding Fibers, HPCF, (SI-MMF) with 200 μm silica core diameter,...
We propose an InP-based upright five-junction (5J) solar cell structure for high conversion efficiency under concentration. In the structure, three bottom subcells are composed of lattice-matched (LM) InGaAsP materials, while two top employ metamorphic InGaP materials. The designed to have same Ga composition 30%. first subcell is thinned so as transmit half photon flux second subcell, thus forming 5J InGaP(1.64 eV)/InGaP(1.64 eV)/InGaAsP(1.3 eV)/InGaAsP(1.02 eV)/InGaAs(0.74 eV) on InP...
Spatially-resolved electroluminescence (EL) images from solar cells contain information of local current distribution. By theoretical analysis the EL intensity distribution, density distribution under a certain bias and sheet resistance can be obtained quantitatively. Two-dimensional numerical simulation is employed to GaInP cell, which agrees very well with experimental results. A reciprocity theorem for spreading found used interpret viewpoint extraction. The optimization front electrodes...
Abstract Solid-state molecular beam epitaxy (MBE)-grown InGaAsP/InGaAs dual-junction solar cells on InP substrates are reported. An efficiency of 10.6% under 1-sun AM1.5 global light intensity is realized for the cell, while efficiencies 16.4 and 12.3% reached top InGaAsP bottom InGaAs cells, respectively. The effects buffer layer back-surface field performance discussed. High device achieved in case a low concentration oxygen weak recombination when buffers layers used,
A 32-elements hydrophone array with diameter of 20mm is obtained based on the FBG-FP(Fiber Bragg Grating Fabry-Perot) interferometer. Multiple FBGs various wavelength are inscribed one fiber by continues FBG inscription. Average acoustic pressure sensitivity -143.9dB re rad/μPa, limited 3dB fluctuation. Intrinsic noise, as crosstalk and polarization induced fading, restrained low reflectivity to 53dB eliminated adding squared signals from three diversity receivers, respectively.
Abstract The heterostructure device based on polyvinylidene fluoride (PVDF)/MoS 2 films was succesfully prepared and showed a good hysteresis feature with unique resistive switching perpromance, where the logarithmic I – V curve looks like butterfly. on-off ratio for in PVDF/MoS reaches 2.5 × 10 happens at −0.9 −4.9 half loop. influence of introduction MoS ferroelectric PVDF film also studied compared to single film. underlying physical mechanism transition attributed polarization field from...