- Perovskite Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Conducting polymers and applications
- Organic Electronics and Photovoltaics
- Solid-state spectroscopy and crystallography
- Quantum and electron transport phenomena
- 2D Materials and Applications
- Wind Turbine Control Systems
- Supercapacitor Materials and Fabrication
- Power System Optimization and Stability
- Optimal Power Flow Distribution
- Molecular Junctions and Nanostructures
- Advanced Memory and Neural Computing
- Optical properties and cooling technologies in crystalline materials
- Wind Energy Research and Development
- Fullerene Chemistry and Applications
- Graphene research and applications
- High-Voltage Power Transmission Systems
- Chemical Synthesis and Reactions
- Economic and Business Development Strategies
- Catalytic Cross-Coupling Reactions
- Zeolite Catalysis and Synthesis
- Economic and Technological Systems Analysis
- Power Systems and Technologies
Central South University
2015-2024
Shanghai University
2024
Shanghai Research Institute of Chemical Industry
2024
Southwest Petroleum University
2024
East China University of Science and Technology
2023
Qilu University of Technology
2023
Hefei General Machinery Research Institute (China)
2021
University of Rochester
2014-2020
Central South University of Forestry and Technology
2020
Kashi University
2020
We report the observation of self-doping in perovskite. CH3NH3PbI3 was found to be either n- or p-doped by changing ratio methylammonium halide (MAI) and lead iodine (PbI2) which are two precursors for perovskite formation. MAI-rich PbI2-rich films p n self-doped, respectively. Thermal annealing can convert p-type n-type removing MAI. The carrier concentration varied as much six orders magnitude. A clear correlation between doping level device performance also observed.
Capable of reflecting the location and intensity external harmful stimuli, a nociceptor network is great importance for receiving pain-perception information. However, hardware-based implementation through use transistor array remains challenge in area brain-inspired neuromorphic applications. Herein, simple ionotronic junctionless oxide with abilities successfully realized due to coplanar-gate proton-coupling effect sodium alginate biopolymer electrolyte. Several important characteristics...
Interfacial electronic properties of the CH3NH3PbI3 (MAPbI3)/MoOx interface are investigated using ultraviolet photoemission spectroscopy and X-ray spectroscopy. It is found that pristine MAPbI3 film coated onto substrate poly (3,4-ethylenedioxythiophene) poly(styrenesulfonate)/indium tin oxide by two-step method behaves as an n-type semiconductor, with a band gap ∼1.7 eV valence edge 1.40 below Fermi energy (EF). With MoOx deposition 64 Å upon MAPbI3, levels shift toward higher binding 0.25...
The electronic structure and surface composition of CH3NH3PbI3 (MAPbI3) films fabricated by one-step method with different precursor ratios PbI2 to CH3NH3I (PbI2/MAI) have been investigated ultraviolet photoelectron spectroscopy (UPS) X-ray (XPS). It is found that the core levels all components in MAPbI3 film shift toward lower binding energy decreasing ratio PbI2/MAI, indicating structures can be adjusted PbI2/MAI. elemental compositions also depend on annealing process, are strongly...
The electronic properties of the interface formed between Au and organometal triiodide perovskite (CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>) are investigated using photoemission spectroscopy.
Electrospun carbon nanofibers provide electrode materials with customizable structures for supercapacitors.
The thickness dependence of fullerene on CH3NH3PbI3 perovskite film surface has been investigated by using ultraviolet photoemission spectroscopy (UPS), X-ray (XPS), and inverse (IPES). lowest unoccupied molecular orbital highest occupied (HOMO) can be observed directly with IPES UPS. It is that the HOMO level in shifts to lower binding energy. XPS results show a strong initial shift core levels energy perovskite, which indicates electrons transfer from molecules. Further deposition forms...
In a little over year, there has been an unexpected breakthrough and rapid evolution of highly efficient solid-state hybrid solar cells based on organometal trihalide perovskite materials. This technology the potential to produce with very highest efficiencies while retaining lowest cost. The authors have measured electronic density states CH3NH3PbI3 using ultraviolet photoemission spectroscopy (UPS), inverse (IPES), x-ray (XPS). valence band maximum conduction minimum positions are obtained...
The electronic structure evolution and energy level alignment have been investigated at interfaces comprising fullerene (C60)/4,4′-cyclohexylidenebis[N,N-bis(4-methylphenyl) benzenamine] (TAPC)/ molybdenum oxide (MoOx)/ indium tin with ultraviolet photoemission spectroscopy inverse spectroscopy. With deposition of TAPC upon MoOx, a dipole 1.58 eV was formed the TAPC/MoOx interface due to electron transfer from MoOx. highest occupied molecular orbital (HOMO) onset pinned closed Fermi level,...
van der Waals (vdW) epitaxy offers a promising strategy without lattice and processing constraints to prepare atomically clean electronically sharp interfaces for fundamental studies electronic device demonstrations. Herein, PbI2 was thermally deposited at high-vacuum conditions onto CVD-grown monolayer MoS2 flakes in vdW epitaxial manner form 3D-2D heterojunctions, which are growth of perovskite films. X-ray diffraction, photoemission spectroscopy, Raman, atomic force microscopy...
Energy band alignments at heterostructure interfaces play key roles in device performance, especially between two-dimensional atomically thin materials. Herein, van der Waals PbI2–MoSe2 heterostructures fabricated by situ PbI2 deposition on monolayer MoSe2 are comprehensively studied using scanning tunneling microscopy/spectroscopy, atomic force microscopy, photoemission spectroscopy, and Raman photoluminescence (PL) spectroscopy. grows a quasi layer-by-layer epitaxial mode. A type-II...
Abstract The humidity stability and phase transition mechanism of the all-inorganic perovskite CsPbI 2 Br based on an optimized dual-source co-evaporation preparation process are investigated at film interface level. It is found that films annealed 300 °C for several minutes exhibit a best crystallinity photoelectric properties. as-grown confirmed to be α with dark brown cubic crystal structure average visible transparency 35.9%. But it will transformed into its δ transparent orthorhombic...
Modification of the ultrathin N,N′-Di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB) insertion layer on electronic structures CH3NH3PbI3 (MAPbI3)/MoO3 interfaces is investigated using ultraviolet photoelectron spectroscopy (UPS) and X-ray (XPS). It found that when an NPB 16 Å inserted between MAPbI3 MoO3, chemical reaction latter two can be effectively suppressed, a favorable energy-level alignment achieved. The valence band maximum (VBM) or highest occupied molecular orbital...
Abstract The new quality productive forces are a strong driving and supporting force in the high-quality development of enterprises. It is thus crucial to study factors underlying Using data on Chinese A-share listed companies from 2010 2022, this paper empirically analyzes impact artificial intelligence found that: (1) significantly impacts improvement enterprises; (2) innovation-drivenness plays mediating role relationship between (3) market competition positive moderating (4) compared...
All inorganic perovskites like CsPbBr3 have attracted rising attention and are considered as promising candidates for optoelectronic devices. Here we fabricated films by co-evaporation. The as-deposited low temperature (below 300 °C) annealed in a mixture phase of CsPb2Br5. After 400 °C annealing ambient air, the becomes dominant with good crystal structure less defects. Then, 2,7-diocty[1]benzothieno-[3,2-b]benzothiophen (C8-BTBT) was deposited on film layer-by-layer to investigate...
CH3NH3PbI3 (MAPbI3)-based perovskite solar cells (PSCs) with special hole and electron transport layers (HTL ETL) were prepared to study their light-induced degradation. Obvious degradation was observed under initial light exposure not only at the device level but also film morphology electronic structure level. Device performance parameters, such as short-circuit current (JSC), power conversion efficiency, fill factor, hysteresis effect, aggravated an of less than ∼8 h 1 sun intensity....