The pentacene field effect transistor (FET) is analyzed as a Maxwell-Wagner element. As result of the effect, carriers injected from source electrode are accumulated at interface between and SiO2-gate insulator. They then conveyed along FET channel by electric formed drain electrodes. current Ids shows characteristic behavior depending on force field. transit time charging key parameters to specify characteristics ruled effect. Results also show that our well explained based present...

Abstract A multifunctional system comprised of hyaluronic acid microneedles was developed as an effective transdermal delivery platform for rapid local delivery. The can regulate the filling amount on tip, by controlling concentration solution. Ultrasonication induces dissolution HA via vibration acoustic pressure, and AC iontophoresis improves electrostatic force-driven diffusion ions rhodamine B. effect ultrasound release analyzed in vitro using a gelatin hydrogel. frequency voltage...

Although histone modifications are associated with gene activities, studies of their causal relationships have been difficult. For this purpose, we developed an inducible system integrating dCas9-based targeting and chemically induced proximity technologies to allow small molecule recruitment P300 acetyltransferase the acetylation H3K27 at precise loci in cells. Employing new technique, elucidated temporal order activation, as well stability installed modification.

Electric field distribution in channel of pentacene effect transistor (FET) was successfully probed by microscopic optical second-harmonic generation (SHG) observation. Microspot SHG signals were acquired at various points the with scanning a spot position along source-drain direction. For FET off state, enhanced signal observed, indicating Laplace formation reflecting device geometry. This clearly supports insulating nature layer state. After turning on FET, profile changed drastically,...

A combined system of microneedles and a triboelectric nanogenerator (TENG) was designed utilized as portable electrically active drug delivery device.

The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of pentacene field effect transistors (FETs) were examined to clarify channel formation in conjunction with the UV/ozone treatment source drain metal (Au) electrodes. Analyzing I–V C–V FETs using Maxwell–Wagner model showed that main charge carriers FET are holes injected from source, a UV/ozone-treated substrate shows high effective mobility owing smoothly into channel. Furthermore, film thickness dependence on sheet...

The channel formation process of the pentacene field effect transistor (FET) was shown by optical second harmonic generation (SHG) ascribed to electric induced SHG. SHG signal probed successfully and nondestructively off on states. enhancement at state observed with applying source-drain voltage in absence gate voltage, whereas it remarkably decayed indicating formation. At formation, holes injected from source electrode changed potential profile film suppressed.

The hydrogen detection characteristics of semipolar (112¯2) plane GaN Schottky diodes were investigated and compared to c-plane Ga- N-polar nonpolar a-plane (112¯0) diodes. showed large current response 4% in nitrogen gas with an accompanying barrier reduction 0.53 eV at 25 °C, the devices exhibited full recovery initial level upon switching a ambient. current-voltage remained rectifying after exposure, sharp contrast case GaN. These results show that surface atom configuration polarity play...

The timely delivery of drugs to specific locations in the body is imperative ensure efficacy treatment. This study introduces a portable facial device that can deliver efficiently using iontophoresis. Two types power supplies-direct current and pulse ionization supplies-were manufactured by injection molding. Electrical stimulation elements, which contained Ag metal wires, were woven into mask packs. diffusion phenomenon skin iontophoresis numerically modeled. Injection molding was simulated...

Optical second harmonic generation (SHG) measurements were used to clarify carrier injection into pentacene field effect transistors (FETs) with Au source and drain electrodes. The electric was probed along the FET channel. Results showed that SHG enhanced depending on biasing voltages. In off state of (Vgs>−30 V), in proportion Laplace formed FET. On other hand, (Vgs<−30 diminished because hole from electrode. Interestingly, FET, electron electrodes also suggested....

The electric field distribution in a pentacene effect transistor (FET) was examined by using microscopic optical second harmonic generation (SHG) measurements. Results showed that the enhanced SHG signal changes depending on biasing conditions. profile estimated analyzing Laplace formed organic FET (OFET) conformal mapping and other methods. observed is good agreement with obtained profile, indicating our data describe OFETs high accuracy. decrease intensity also discussed based Poisson...

The electric field distribution in electronic devices, particularly the organic was visualized by optical second harmonic generation (SHG) imaging technique on basis of induced SHG (EFISHG). Two-dimensional images from effect transistor using pentacene were taken with a cooled CCD camera, and showed successfully resolution 1 mum. method provides us novel for visualizing actual devices under device operation.

Analyzing pentacene field effect transistors (FETs) with Au source and drain electrodes as Maxwell-Wagner elements, electron hole injection from the into FET channel were examined using capacitance-voltage (C−V) optical second harmonic generation (SHG) measurements. The C−V characteristics show a hysteresis behavior that depends on gate-source (drain) stress biasing, Vgs(Vgd). Charge carriers forming conducting of are mainly holes injected electrodes. Results suggest this is attributable to...

By probing optical second harmonic generation (SHG) signals enhanced around the injection electrode, carrier mechanism of top-contact pentacene field-effect transistors (FETs) was investigated in terms Schottky injection. At Au source SHG signal disappeared immediately after applying driving voltage: applied external electric field cancelled by space charge formed holes accumulated FET channel. Ag SH intensity decayed slowly. Its dependence on device operation voltage suggested that not...

The injected carrier distribution in a pentacene field effect transistor (FET) was examined using optical second harmonic generation (SHG) measurements. Results showed that the SHG signal representing profile of carriers from source electrode distributed along channel depends on biasing conditions. enhanced around drain under condition u[=(Vgs−Vth)/Vds]<1 discussed based formation an exhausted region carriers. Organic FET (OFET) analysis, as system Maxwell–Wagner (MW) element,...

In organic field-effect transistors (OFETs), the carrier injection from source and drain electrodes depends on contact resistance. Results of this study show, based a dielectric physics analysis pentacene OFET as Maxwell–Wagner (MW) effect element with resistance, that resistance leads to an increase in time required for charge accumulation at interface. Considering background, injection, transport, mechanisms were investigated. Capacitance frequency time-resolved microscopic optical second...

Trapped carriers in polydiacetylene (PDA) films were directly observed by the electric field induced second harmonic generation (EFISHG) using effect transistor (FET) structure. Response of EFISHG signal from PDA-FET with applying voltage depended strongly on polarity gate voltage. For negative bias, which promotes hole injection source electrode, was not during bias application, whereas it enhanced after turning off bias. Electric formed trapped holes PDA activated for condition.

We studied the carrier transport and trapping in indium tin oxide/polyimide (PI)/6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)/Au diodes by using charge modulation spectroscopy (CMS) time-resolved electric field induced optical second harmonic generation (TR-EFISHG) measurements. TR-EFISHG directly probes spatial behaviors diodes, CMS is useful explaining motion with respect to energy. The results clearly indicate that injected carriers move across TIPS-pentacene thorough...