A5029790598- Semiconductor materials and devices
- Copper Interconnects and Reliability
- Metal and Thin Film Mechanics
- Semiconductor materials and interfaces
- Advancements in Semiconductor Devices and Circuit Design
- Industrial Vision Systems and Defect Detection
- MXene and MAX Phase Materials
- Electrodeposition and Electroless Coatings
- Thermography and Photoacoustic Techniques
- Advanced Statistical Process Monitoring
- Force Microscopy Techniques and Applications
- Nanowire Synthesis and Applications
- Magnesium Alloys: Properties and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Magnetic properties of thin films
- Thermal properties of materials
- Molecular Junctions and Nanostructures
- Anodic Oxide Films and Nanostructures
- Advanced Thermoelectric Materials and Devices
Albany Molecular Research (United States)
2024
GlobalFoundries (United States)
2018-2023
Rensselaer Polytechnic Institute
2018-2022
Columbia University
2018-2020
University of Central Florida
2018-2020
University of Mosul
2020
Los Alamos National Laboratory
2020
University of Virginia
2020
Materials Processing (United States)
2020
Aristotle University of Thessaloniki
2018
Epitaxial Ru(0001) layers are sputter deposited onto Al2O3(0001) substrates and their resistivity ρ measured both in situ ex as a function of thickness d = 5–80 nm order to quantify the scaling associated with electron-surface scattering. All have smooth surfaces root-mean-square roughness <0.4 nm, exhibit an epitaxial relationship substrate: Ru[0001]||Al2O3[0001] Ru[101¯0]||Al2O3[112¯0], show no resistance change upon air exposure, suggesting negligible contributions from geometric...
In situ and ex transport measurements on epitaxial Co(0001)/Al2O3(0001) layers with thickness d = 7–300 nm are used to quantify the resistivity ρ scaling due electron surface scattering. Sputter deposition at 300 °C followed by in annealing 500 leads single-crystal smooth surfaces (<1 roughness) an relationship: Co[0001]‖Al2O3[0001] Co[101¯0]‖Al2O3[112¯0]. The measured vs data well described classical expression Fuchs Sondheimer both 295 77 K, yielding a temperature-independent...
In situ electron transport measurements on epitaxial 10-nm-thick Cu(001) with Al and AlOx cap layers indicate that the surface scattering specularity increases when density of electronic states decreases. The Cu were sputter deposited MgO(001) substrates, their resistance is measured in as a function thickness d <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Al</sub> = 0-1.4 nm well oxygen exposure from 10 <sup...
The experimentally measured resistivity of Co(0001) and Ru(0001) single crystal thin films, grown on c-plane sapphire substrates, as a function thickness is modeled using the semiclassical model Fuchs-Sondheimer. fits show that Ru would cross below for Co at approximately 20 nm. For films with thicknesses above nm, transmission electron microscopy evidences threading misfit dislocations, stacking faults deformation twins. Exposure to ambient air, deposition oxide layers SiO2, MgO, Al2O3...
As electronic devices shrink down to their ultimate limit, the fundamental understanding of interfacial thermal transport becomes essential in management. However, a comprehensive phonon mechanisms that drive is still under development. The across interfaces can be strongly affected by factors such as crystalline structure, surface roughness, chemical diffusion, etc. These complications lead significant quantitative uncertainty between experimentally measured boundary conductance (TBC) real...
Several major electron scattering mechanisms in tungsten (W) are evaluated using a combination of first-principles density functional theory, Non-Equilibrium Green's Function formalism, and thin film Kelvin 4-point sheet resistance measurements. The impact grain boundary is found to be roughly an order magnitude larger than the defect scattering. Ab initio simulations predict average reflection coefficients for number twin boundaries lie range r = 0.47 0.62, while experimental data can fit...
Epitaxial Nb(011) and Nb(001) layers are sputter deposited onto a -plane r-plane sapphire substrates, respectively, their resistivity p measured in situ, ex at 77 K as function of layer thickness d = 4-400 nm. The increase with decreasing is independent orientation described the model by Fuchs Sondheimer (FS), providing value for bulk electron mean free path λ 20 ± 2 nm room temperature. Exposure to air causes 1.5-nm-thick surface oxide an ρ up 74%, suggesting decrease scattering specularity...
Epitaxial Ti1−xMgxN(001) layers were deposited on MgO(001) by reactive magnetron cosputtering from titanium and magnesium targets in 15 mTorr pure N2 at 600 °C. X-ray diffraction (XRD) indicates a solid solution rock-salt phase for the composition range x = 0–0.55, lattice constant that increases monotonously 4.251 Å TiN to 4.288 Ti0.45Mg0.55N, decreasing crystalline quality with increasing Mg content, as quantified XRD ω rocking curve width which 0.25° 0.80°. φ-scans show all Ti1−xMgxN ≤...
In situ transport measurements on 10-nm-thick epitaxial Cu(001), Co(001), and Rh(001) layers exhibit a characteristic increase in the sheet resistance ΔRs/Ro = 43%, 10%, 4% when adding 4.0, 13.0, 13.0 monolayers of Ti, respectively. Similarly, exposing these to 0.6 Torr O2 results 26%, 22%, &lt;5% Rs. This suggests that adatoms Cu Co surfaces considerably disturb surface potential, leading diffuse electron scattering resulting while effects are negligible for Rh. A similarly small...
Ru(0001) and Co(0001) films with thickness d ranging from 5 to 300 nm are sputter deposited onto Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (0001) substrates in order quantify compare the resistivity size effect. Both metals form epitaxial single crystal layers their basal planes parallel substrate surface exhibit a root-mean-square roughness <; 0.4 for Ru 0.9 Co. Transport...
Epitaxial Ni(001) layers are sputter deposited on MgO(001) substrates and their electrical resistivity p measured in situ as a function of thickness dNi = 5-100 nm to quantify the size effect due electron surface scattering. X-ray diffraction 8-28 scans, w-rocking curves, pole figures confirm an epitaxial layer-substrate relationship with Ni[001]II MgO[001] Ni[100]II MgO[100]. The is well described semiclassical model by Fuchs Sondheimer room-temperature bulk <sub...
In situ transport measurements on epitaxial 7.6-nm-thick Co(0001)/Al2O3(0001) films with and without Ti TiN capping layers during O2 exposure are used to investigate the effects of surface chemistry electron scattering at Co(0001) surfaces. The Co sheet resistance Rs increases increasing thickness dTi dTiN layers, saturating 8% 31% above uncoated for &gt; 0.2 nm 0.1 nm, respectively. This increase is attributed into local states, which less pronounced than TiN. taken a continuously...
Previous experiments have shown a link between oxidation and strength changes in single crystal silicon nanostructures but provided no clues as to the mechanisms leading this relationship. Using atomic force microscope-based fracture experiments, molecular dynamics modeling, measurement of oxide development with angle resolved x-ray spectroscopy we study evolution (111) surfaces they oxidize fully developed layers. We find that drops partial recovers when is formed intentionally oxidized...
Defects in epitaxial Ru(0001) films on c-plane sapphire, with nominal thicknesses of 10–80 nm, deposited at 350 °C and step-annealed to 950 °C, were characterized using transmission electron microscopy. The variation Ru sapphire lattice parameters temperature is such that the misfit strain for observed 30° rotated-honeycomb relationship essentially constant 1.5%, resulting a biaxial stress 10.0 GPa an energy density 150 MJ m−3 unrelaxed films. Stress relaxation occurs by formation defects....
Inline metrology is critical in providing data used advanced process control (APC) loops. However, fabs benefit from running with as few tools possible while meeting quality and requirements. This paper uses time series analysis to show the relationship between sampling rates closed-loop variance of feedforward feedback-controlled processes. The approach was GlobalFoundries' Fab8, Malta NY, identify opportunities for reduced sampling. A 7% reduction achieved at a toolset, making it avoid...
As structure size decreases, electron scattering and liner conduction effects may lead to inaccuracy in the TCR method. To investigate these potential issues for tungsten systems, resistivity, grain size, temperature derivatives of sheet resistance are measured as a function thickness CVD deposited films. Liner was found impact apparent dependence thin W films exhibit dp/dT value 39% higher than reported literature bulk. The effect at surfaces boundaries on derivative is predicted from...
As structure size decreases, electron scattering and liner conduction effects may lead to inaccuracy in the TCR method. To investigate these potential issues for tungsten systems, resistivity, grain size, temperature derivatives of sheet resistance are measured as a function thickness CVD deposited films. Liner was found impact apparent dependence thin W films exhibit dp/dT value 39% higher than reported literature bulk. The effect at surfaces boundaries on derivative is predicted from...