A5103201540- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- MXene and MAX Phase Materials
- Integrated Circuits and Semiconductor Failure Analysis
- Electrostatic Discharge in Electronics
- Particle Accelerators and Free-Electron Lasers
- Dementia and Cognitive Impairment Research
- Silicon Carbide Semiconductor Technologies
- Particle accelerators and beam dynamics
- Supramolecular Self-Assembly in Materials
- Health disparities and outcomes
- Induction Heating and Inverter Technology
- Neural Networks and Reservoir Computing
- Photoreceptor and optogenetics research
- Ferroelectric and Piezoelectric Materials
- Advanced Sensor and Energy Harvesting Materials
- Mental Health Research Topics
- ZnO doping and properties
- Transition Metal Oxide Nanomaterials
Peking University
1985-2025
Guangzhou Psychiatric Hospital
2025
Institute of Microelectronics
2018-2020
Abstract Neuromorphic computing represents an innovative technology that can perform intelligent and energy‐efficient computation, whereas construction of neuromorphic systems requires biorealistic synaptic elements with rich dynamics be tuned based on a robust mechanism. Here, ionic‐gating‐modulated transistor layered crystals transitional metal dichalcogenides phosphorus trichalcogenides is demonstrated, which produce diversity short‐term long‐term plasticity including excitatory...
For the unsupervised learning of spiking neural networks (SNNs), both excitatory and inhibitory signals with different arriving time should be connected to artificial neurons, causing high-hardware-cost issue for implementation. In this work, a capacitor-less neuron based on novel Leaky-FeFET (L-FeFET) device is proposed experimentally demonstrated remarkably reduced hardware cost only two transistors one resistor. first time, by exploiting physics directional ferroelectric polarization...
By combining differential phase contrast scanning transmission electron microscope (DPC-STEM) and Energy Disperse Spectroscopy (EDS) analysis, the migration of oxygen vacancies evolution built-in field in ferroelectric HfO 2 are observed for first time.
In this paper, direct experimental observation of negative capacitance (NC) in a standalone ferroelectric (FE) capacitor is reported for the first time, which proves that physical origin NC domain switching dynamics rather than stabilized switching. Based on origin, "dynamic polarization (DP) matching", different from traditional matching, rigorously derived and verified to be prerequisite sub-60mV/dec subthreshold swing (SS) NCFET. The proposed DP matching can accurately describe predict...
In face of the critical endurance issue, for first time we take a holistic perspective to co-optimize ferroelectric materials and interlayer in FeFET. Compared common HZO based gate stack, novel combination Hf <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.95</inf> Al xmlns:xlink="http://www.w3.org/1999/xlink">0.05</inf> O xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> +Al xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> enhances $\gt 5...
In this letter, a novel negative capacitance tunnel FET (NC-TFET) design based on junction depleted-modulation is proposed and experimentally demonstrated with sub-60mV/dec subthreshold swing (SS). By striped gate stack integrated ferroelectric Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr O xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> , the fabricated Si NC junction-modulated TFET (NC-JTFET) exhibits steeper SS, higher...
We successfully developed a high-performance FeFET memory device by integrating ZrO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> anti-ferroelectric with IGZO channel for the first time. The replacement of conventional HfO ferroelectric effectively reduces coercive field and boosts endurance. Furthermore, allows an interlayer free gate stack that lowers working voltage enhances retention compared to Si channel. novel demonstrates high...
Background Chinese older adults frequently encounter limitations in activities of daily living (ADL) and experience depression. Prior research has not deeply explored the interconnectedness these factors through network analysis. Methods The study utilized data from 2,137 aged 65 older, sourced 2018 China Health Retirement Longitudinal Study (CHARLS). ADL scale CESD-10 were employed to assess ability perform depression, respectively. We conducted modeling bridge expected influence (BEI)...
In article number 1800195, Yuchao Yang and co-workers demonstrate an ionic-gating-modulated synaptic transistor based on van der Waals crystals, showing bio-realistic short-term long-term plasticity along with remarkable linearity, symmetry, ultralow energy consumption of ≈30 fJ per spike. Their detailed investigations reveal two-stage ionic-gating effects, namely, surface adsorption internal intercalation, causing different post-stimulation diffusive dynamics accounting for the observed...
In this work, the transient response of a novel Negative Capacitance Tunnel FET (NC-TFET) design is experimentally studied under different sweeping rates gate input voltage. Within range rate, device characteristics exhibit improved subthreshold swing compared with DC results, which clarifies that voltage amplification caused by NC effect derived from ferroelectric polarization switching rather than stabilized process. Moreover, measured results further indicate hysteresis NC-based devices...
This paper presents the new physical understanding of negative capacitance (NC) and hysteresis behaviors in ferroelectric-based NC-FETs for low-power logic applications. Instead traditional stabilized switching theory, we demonstrate that dynamic polarization ferroelectric is origin NC phenomenon which can be only obtained under relatively low frequency. Moreover, it found there an intrinsic optimization conflict between subthreshold slope frequency applications, considering both sweeping...
Negative capacitance FET (NCFET) can achieve the steeper subthreshold swing (SS) than conventional MOSFET for reduction of supply voltage V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DD</sub> , while many experimental results indicate that NCFETs show SS only within a limited drain current range. In this work, physical origin and parameter impacts range corresponding to in NCFET are investigated, based on modeling domain switching dynamics...
The read current margin and memory window (MW) of HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> -based ferroelectric FET (FeFET) are comprehensively re-evaluated by considering the impacts dynamics interface charges during operation. It is found that readout methods time can significantly influence evaluation MW due to polarization switching dynamics, revealing limitation prevailing method pulsed IV. Moreover, when fast readout,...
In this work, the negative capacitance (NC) effect of a ferroelectric (FE) capacitor is experimentally investigated. Both and positive in FE are observed, further analyzed from perspective domain switching dynamics. It shown that or depends on competition between expansion contraction forces new domains. Experimental results indicate small slow voltage drop near maximum sweeping applied more helpful to enhance NC effect.
In this work, for bulk tunnel field-effect transistors (TFET), the electrical isolation solutions between neighboring devices TFET integration are investigated. To suppress leakage current of P-type doped regions through substrate, a new effective method is proposed and verified via simulation. The simulation shows can be reduced from 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-5</sup> A/μm to...
Experimental tests of a coupled normal temperature low helix resonator with six-half-wavelength are described. The frequency shift and dynamic instability the studied experimentally. mechanical vibration caused by ponderomotive effect has been controlled. This can run stably at RF power 50 KW , 27 MHz, duty factor 1/6, maximum voltage gain is more than 1.1 MV. Some measures have taken to increase stability helix. tested model for heavy ion booster following small van de graff accelerator.