A5089028688- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- MXene and MAX Phase Materials
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
Institute of Microelectronics
2023-2025
Chinese Academy of Sciences
2023-2025
University of Chinese Academy of Sciences
2023-2024
We propose an in situ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {th}}$ </tex-math></inline-formula> measurement method to investigate the endurance fatigue mechanism of Si ferroelectric field-effect transistor (FeFET) with HfZrO ferroelectric. The means that a pulsed current-voltage is embedded during quasi-static capacitance-voltage (QSCV) measurement. Based on this method, trapped...
In this work, the switching dynamics of HfO <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text{2}}$</tex-math> </inline-formula> –ZrO nanolaminate ferroelectric (FE) films with different laminate thicknesses are investigated. Metal/FE layer/metal capacitors alternate cycle ratios <italic xmlns:xlink="http://www.w3.org/1999/xlink">n</i> ( notation="LaTeX">$=$</tex-math> 1, 8, 15, 25, and 37)...
We investigate charge trapping induced trap generation in Si ferroelectric field-effect transistor (FeFET) with Hf0.5Zr0.5O2/SiO2 gate stacks by split <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}$ </tex-math></inline-formula> – notation="LaTeX">${V}$ measurement. find that the recombination of electrons and holes within induces traps consequently results degradation endurance characteristics FeFET....
The endurance degradation mechanism in Si FeFET has attracted great research interest. However, the reports mainly focused on large-scale devices, owing to external current measurement limitations of modern equipment. In this work, we study scaled n-FeFET by in-situ V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> overcome size limitation. We find that excess electron injection rather than hole plays a key role charge trapping...