A5070627597- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- GaN-based semiconductor devices and materials
- Advanced Photonic Communication Systems
- Image Processing Techniques and Applications
- Advanced Fiber Optic Sensors
- Modular Robots and Swarm Intelligence
- Optical Coatings and Gratings
- Nanowire Synthesis and Applications
- Semiconductor Quantum Structures and Devices
- Mechanical and Optical Resonators
- Advanced Optical Network Technologies
- Advanced Optical Sensing Technologies
- Advanced Sensor and Energy Harvesting Materials
- Neural Networks and Reservoir Computing
- Photonic Crystals and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Fiber Laser Technologies
- Software-Defined Networks and 5G
- Interactive and Immersive Displays
University College Cork
2024
Tyndall Centre
2023
Indian Institute of Science Bangalore
2018-2020
We demonstrate static and dynamic bulk refractive index measurement using slot-waveguide based ring resonator. A detailed simulation is performed to optimize the geometry for maximum sensitivity. The on-chip measurements are a slot waveguide resonator by applying aqueous solutions of acids bases at different concentrations. Based on these measurements, we derive relation change per unit in concentration liquids water. experimentally measured sensitivity 476 nm/RIU, enabling limit detection...
The integration of dissimilar semiconductor materials holds immense potential for harnessing their complementary properties in novel applications. However, achieving such combinations through conventional heteroepitaxy or wafer bonding techniques presents significant challenges. In this research, we present a approach involving the direct InGaAs-based p-i-n membranes with GaN, facilitated by van der Waals forces and microtransfer printing technology. resulting n-InP/n-GaN heterojunction was...
Abstract The increasing luminosity in CERN experiments, enabled by future upgrades, demands optical links with enhanced bandwidth and radiation tolerance. Silicon Photonics (SiPh) has emerged as the optoelectronic technology meeting these requirements is being considered for next generation of readout systems detectors. This paper presents measurement results from photonic circuits integrated into a test chip designed at CERN, along progress on system aspects SiPh radiation-tolerant links.
Abstract The consolidation of the Large Hadron Collider (LHC) Beam Instrumentation requires digitisation analogue signals from detectors within radiation areas. Subsequently, digital data are transmitted via existing fibre plant to back-end area for processing. In order manage increased volume with infrastructure, proposed Coarse Wavelength Division Multiplexing (CWDM) link project merges four optical carrier different wavelengths into a single through two high-speed radiation-tolerant twin...
We report, for the first time, a single state polarization (TE) dual-band grating fiber-chip coupler on 700 nm thick silicon nitride platform that couples to both O and C band channels.Dual-band coupling with is achieved using cross mode k-space equalization.By phase matching first-order vertical T E 01 fundamental 00 in two distinct bands, we observe simultaneous co-directional waveguide.Experimental peak efficiency per measured be -7.3 dB O-band -8.2 C-band combined 1 bandwidth observed 82 nm.
The integration of compact high-bandwidth III-V active devices in a scalable manner is highly significant for Silicon-on-insulator (SOI) photonic integrated circuits. To address this, we demonstrate the pre-fabricated 21 × 57 µm2 InGaAs photodetector (PD) coupons with thickness 675 nm to 500 SOI platform using direct bonding micro-transfer printing process. common are coupled Si waveguides via butt, grating and evanescent coupling schemes responsivities 0.13, 0.3 0.6 A/W respectively, line...
Transfer-printed InGaAs photodetectors are integrated on SOI by evanescent, grating and edge coupling, exhibiting responsivities of 0.7, 0.38 0.15 A/W, with dark currents 48,47 400 nA at 0.6 V reverse bias respectively.