The activation energy of electromigration in 'bamboo'-type, passivated Al-1% Si/TiN/Ti lines was determined by means high resolution resistance measurements at wafer level. Both the very early stages, with a nonlinear behaviour resistance, and subsequent characterized an approximately constant rate change, were analysed existing model that correlates mechanical stress evolution. An could be extracted only phase linear increase, where value 0.95 eV found. Diffusion interface between Al-Si...

This paper reports on a compact and lightweight sensor for analysis of gases/vapors by means MEMS-based pre-concentrator coupled to miniaturized infrared absorption spectroscopy (IRAS) module. The was utilized sample trap vapors in MEMS cartridge filled with sorbent material release them once concentrated fast thermal desorption. It also equipped photoionization detector in-line detection monitoring the sampled concentration. released are injected into hollow fiber, which acts as cell IRAS...

In this work the applicability of NIST electromigration test patterns when used to "bamboo" metal lines is discussed. Wafer level tests on passivated and nonpassivated samples employing Al-1%Si/TiN/Ti metallization scheme were performed. Straight 1000 /spl mu/m long 0.9 or 1.4 wide tested at two different current densities, j=3 MA/cm/sup 2/ J=4.5 2/, keeping stress temperature T=230/spl deg/C. The failures occurred mainly in end segment areas hindered evaluation resistance lines. order avoid...

The results of a thorough thermoelectric characterization, performed both in vacuum chamber and at atmospheric pressure, ultra-low-power hotplates based on suspended structures with different layouts are presented this work compared 2D thermal 3D finite elements simulations. Electrical properties the thin films used devices have been also measured, involving appropriate on-chip test structures, their values were employed model. Temperature vs. heating power experimental curves showed great...

The fabrication of a fully ion-implanted and microwave annealed vertical p-i-n diode using high purity semi-insulating 4H-SiC substrate has been demonstrated for the first time. thickness intrinsic region is wafer 350 µm. anode cathode have doped with Al P, respectively, to concentrations few times 10 20 cm -3 by ion implantation. post implantation annealing performed heating samples up 2100°C. device rectifying behavior indicates that carrier modulation takes place in bulk region.

Aiming to minimize the interface state density, we fabricated MOS capacitors on n-type 4H-SiC by using wet oxidation of nitrogen implanted layers. We investigated a wide range implantation dose, including high dose able amorphise surface SiC layer with intent reduce time. The oxide quality and SiO2-SiC properties were characterized capacitance-voltage measurements capacitors. proposed process, in which is ion-implanted before oxidation, effective density states near conduction band edge if...

Correlation spectroscopy is a powerful analytical tool for gaseous species detection, with improved sensitivity and enhanced selectivity. The application in the field of this spectroscopic technique, remote sensing purposes, has long been prevented due to necessity equip instrument reference ‘cell’ containing an actual sample target molecules perform correlation measurements. A new photonic chip, based on LNOI (lithium niobate insulator) substrates, developed tested by applying MEOS (micro...

A preliminary study is proposed aimed at developing a novel process for thin film thermopile detectors based on Pt-polysilicon thermoelements realized silicon substrate. Good contacts between Pt and heavily doped n p-polysilicon have been achieved by using Ti/TiN/Pt barrier structure. Step coverage of 300 nm high polysilicon steps obtained RIE etching has evaluated wafer level measurements. The experimentally estimated yield turns out to be higher than 90%. Mechanical stability suspended...

The current-voltage characteristics of Al+ implanted 4H-SiC p+n junctions show an important reduction leakage currents with diode aging at room temperature. case a family diodes that immediately after manufacture had forward current density increasing from 10-9 to 10-6 A/cm2 when biased 0 and 2 V, reverse @ 5×10-7 100 is here presented discussed. During manufacturing post implantation annealing 1600 °C for 30 min was followed by 1000 1 treatment metal contacts alloying. After 700 days...

Activation and compensation ratios feature the electrical doping efficiency of a semiconductor material by ion implantation. The estimation these requires quantitative evaluation density implanted dopant in substitutional position compensator centers after mandatory post implantation annealing treatment. In case Al + 4H-SiC, it is common habit to determine acceptor density, thermal ionization energy fitting curve drift holes temperature dependence with charge neutrality equation. However,...

The reflectance and transmittance spectra of a set thin gold films on sodium alginate are measured simulated in the framework generalized transfer matrix method. In simulation, dielectric function for nano-particles (NP) was modified from that bulk by using variable damping energy. A Lorentz oscillator used to describe localized surface plasmon resonance. results elucidate structural arrangement deposited material specific substrate. collision frequency obtained simulation indicates...

In this work a MEMS gas calibration source will be presented. For reliable and quantitative automatic measures over long periods of time, sensors micro-analytical-systems require periodical calibrations. The authors developed an innovative solution based on liquid reservoir silicon micromachined nanochannels. To provide low emission rates highly volatile substances (e.g. toluene) in the ng/min range, micro-channels have millimetric length, micrometric width nanometric depth, with typical...

The electrical characteristics of MOSFETs fabricated on 4H-SiC with a process based N implantation in the channel region before growth gate oxide are reported as function concentration at SiO2/SiC interface up to 6  1019 cm-3. field effect mobility improves increasing concentration. At room temperature values change from 4 cm2/Vs for not implanted sample 42 highest Furthermore, increases and presents above 60 200 °C. better (higher mobility, lower threshold voltage, subthreshold swing) were...

We propose a comparison among different solutions for realizing polysilicon thermoelectric transducers, with five types of thermoelements based on Al/polysilicon and two level design, using doping (of p n-type) the poly layers. The device performances are evaluated test geometry electrical measurements performance obtained various compared.

This work reports the realization and characterization of 4H-SiC p+/n diodes with p+ anodes made by Al+ ion implantation at 400°C post-implantation annealing in silane ambient a cold-wall low-pressure CVD reactor. The Al depth profile was almost box shaped height 6×1019 cm-3 160 nm. Implant anneals were performed temperature range from 1600°C to 1700°C. As increased, flow rate also increased. process yields smooth surface roughness implanted area 1.7 - 5.3 nm increasing temperature....

This paper reports on a portable selective sensor for trace levels of hazardous vapors, which combines two stage purge and trap vapor pre-concentration system, MEMS gas-chromatographic (GC) separation column miniaturized quartz-enhanced photoacoustic spectroscopy (QEPAS) detector. is the first demonstration QEPAS device used as spectroscopic detector downstream FAST-GC column, demonstrating two-dimensional selectivity enabling real-world analyses in dirty environments with response time few...