A5035298398- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Electronic and Structural Properties of Oxides
- Semiconductor Quantum Structures and Devices
- Tropical and Extratropical Cyclones Research
- Thin-Film Transistor Technologies
- Ion-surface interactions and analysis
- Advanced Memory and Neural Computing
- Molecular Junctions and Nanostructures
- Spectroscopy and Quantum Chemical Studies
- X-ray Spectroscopy and Fluorescence Analysis
- Climate variability and models
- Geological and Tectonic Studies in Latin America
- High voltage insulation and dielectric phenomena
- Quantum Dots Synthesis And Properties
- Force Microscopy Techniques and Applications
- Soil Science and Environmental Management
- GaN-based semiconductor devices and materials
- Soil Moisture and Remote Sensing
- Meteorological Phenomena and Simulations
- Diamond and Carbon-based Materials Research
- Aerogels and thermal insulation
- nanoparticles nucleation surface interactions
Instituto de Química del Noroeste Argentino
2024
Consejo Nacional de Investigaciones Científicas y Técnicas
2024
Instituto de Ciencia de Materiales de Madrid
2010-2021
Universidad Pontificia Comillas
2019-2021
Universidad Autónoma de Madrid
2014
Consejo Superior de Investigaciones Científicas
2010-2011
Abstract Despite southern South America being recognized as a hotspot for deep convective storms, little is known about the socioenvironmental impacts of high-impact weather (HIW) events. Although there have been past efforts to collect severe reports in region, they highly fragmented among and within countries, sharing no common protocol, limited particular phenomenon, very specific or short period time. There pressing need more comprehensive understanding present risks linked HIW events,...
The selection of appropriate characterisation methodologies is vital for analysing and comprehending the sources defects their influence on properties heteroepitaxially grown III-V layers.In this work we investigate structural GaAs layers by Metal-Organic Vapour Phase Epitaxy (MOVPE) Ge substrates -(100) with 6⁰ offset towards <111> -under various growth conditions.Synchrotron X-ray topography (SXRT) employed to nature extended linear formed in epilayers.Other techniques, such as reciprocal...
Nanostructuring of ultrathin HfO2 films deposited on GaAs (001) substrates by high-resolution Lloyd's mirror laser interference nanolithography is described. Pattern transfer to the film was carried out reactive ion beam etching using CF4 and O2 plasmas. A combination atomic force microscopy, scanning electron transmission energy-dispersive X-ray spectroscopy microanalysis used characterise various steps process resulting HfO2/GaAs pattern morphology, structure, chemical composition. We show...
We have evaluated the effect of thermal annealing on morphology, crystalline phase and elemental composition high-k dielectric HfO2-on-GaAs nanopatterns at 500–620 °C by using atomic force microscopy (AFM), high-resolution transmission electron (HRTEM) energy dispersive X-ray spectroscopy (EDS). While HfO2–GaAs interface continues to be atomically abrupt 620 °C, we found a gradual shrinkage in pattern linewidth period with increasing temperature. Facet formation triggered nanoscale-modulated...
We report on the nanopatterning by electron beam lithography (EBL) and reactive ion etching (RIE) in a SF6/Ar+ plasma of ultra-thin HfO2 films deposited GaAs (001) substrates for gate oxide application next generation III-V metal-oxide-semiconductor field effect transistors (MOSFETs). Characterization HfO2/GaAs nanostructured samples atomic force microscopy (AFM), high-resolution scanning (HRSEM), energy-dispersive X-ray spectroscopy microanalysis (EDX) transmission (TEM) has shown formation...
We present a reliable dry-etch process for patterning deep-submicron structures in ultrathin (16 nm) HfO 2 layers deposited on GaAs substrates. Plasma chemistries based BCl 3 /O and SF 6 /Ar have been investigated using an inductively-coupled plasma reactive ion etch (ICP-RIE) reactor. The reliability has examined terms of rate selectivity, time control, anisotropy, surface roughness the underlying substrate potential application to gate nanopatterning next-generation field-effect transistor...
Atomic hydrogen modification of the surface energy GaAs (110) epilayers, grown at high temperatures from molecular beams Ga and As4, has been investigated by friction force microscopy (FFM). The reduction observed with longer exposures to H beam correlated lowering originated progressive de-relaxation occurring upon chemisorption. Our results indicate that H-terminated epilayers are more stable than As-stabilized ones, minimum value 31 meV/Å2 measured for fully hydrogenated surface. A...
Abstract The replacement of the strained Si channel in metal-oxide-semiconductor-field-effect-transistors (MOSFETs) with high electron mobility III-V compound semiconductors, particularly InGaAs, is being intensively investigated as an alternative to improve drive current at low supply voltages sub-10 nm CMOS applications. As device scaling continues, reduction source and drain contact resistance becomes one most difficult challenges fabricate highly scaled III-V-MOSFETs. In this article, we...
The nucleation of SrTiO<sub>3</sub> three-dimensional (3D) islands and nanorings on Si substrates <italic>via</italic> a novel metalorganic decomposition (MOD) process has been investigated as function temperature solution concentration the SrTi(OC<sub>3</sub>H<sub>7</sub>)<sub>6</sub> precursor.
The step-step interactions on vicinal GaAs (110) surface patterns have been extracted from the quantitative analysis of terrace width distribution (TWD). We specifically studied in near-equilibrium faceting and kinetics-driven step bunching meandering formed by spontaneous self-organization or through modification growth kinetics atomic hydrogen. show that experimental TWDs determined force microscopy measurements can be accurately described a weighed sum generalized Wigner several...
Modification of the surface composition, stoichiometry, morphology, and structure HfO2 ultra-thin layers upon exposure to atomic hydrogen beams has been investigated by a combination time-of-flight secondary ion mass spectrometry (ToF-SIMS) depth profile analysis, angle-resolved x-ray photoelectron spectroscopy (ARXPS), force microscopy (AFM) imaging, transmission electron (TEM). The etching reaction found be thermally activated (Ea = 96 kJ/mol) governed expression Retch(Å/h) 3.03 × 108...