A5076101798- Thin-Film Transistor Technologies
- Organic Electronics and Photovoltaics
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Conducting polymers and applications
- ZnO doping and properties
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Sensor and Energy Harvesting Materials
- Nanowire Synthesis and Applications
- Transition Metal Oxide Nanomaterials
- Perovskite Materials and Applications
- Organic Light-Emitting Diodes Research
- Ferroelectric and Negative Capacitance Devices
- Quantum Dots Synthesis And Properties
- GaN-based semiconductor devices and materials
- Chalcogenide Semiconductor Thin Films
- solar cell performance optimization
- Molecular Junctions and Nanostructures
- Semiconductor materials and interfaces
- Silicon and Solar Cell Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor Quantum Structures and Devices
- Silicon Carbide Semiconductor Technologies
- Neuroscience and Neural Engineering
- Ga2O3 and related materials
Kyungpook National University
2015-2024
Pohang University of Science and Technology
2023-2024
Pusan National University
2009-2023
Gachon University
2014
Seoul National University
2007-2012
Mines Saint-Étienne
2012
Ulsan College
2004
University of Ulsan
2004
Operating in wet conditions The high efficiency of the complex organic molecule Spiro-OMeTAD as a hole-transporting material for perovskite solar cells requires use hygroscopic dopants that decrease stability. Jeong et al. synthesized hydrophobic fluorinated analogs materials have favorable shifting electronic state hole extraction and used them to fabricate cells. A champion device had certified power conversion 24.8% an open-circuit voltage near Shockley-Queisser limit. These devices could...
Abstract Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is most commonly used as an anode buffer layer in bulk-heterojunction (BHJ) polymer solar cells (PSCs). However, its hygroscopic and acidic nature contributes to the insufficient electrical conductivity, air stability restricted photovoltaic (PV) performance for fabricated PSCs. In this study, a new multifunctional additive, 2,3-dihydroxypyridine (DOH), has been PEDOT: PSS obtain modified properties PSS@DOH achieve...
Abstract In this study, we propose an effective strategy for achieving the flexible one organic transistor–one memristor (1T–1R) synapse using multifunctional memristor. The dynamics of conductive nanofilament (CF) in a hydrophobic fluoropolymer medium is explored and fluoropolymer-based developed. 1T–1R can be fabricated solution process because fluorinated polymer layer produced on transistor without degradation underlying semiconductor. developed exhibits multilevel conductance with high...
Hardware neural networks with mechanical flexibility are promising next-generation computing systems for smart wearable electronics. Several studies have been conducted on flexible practical applications; however, developing complete synaptic plasticity combinatorial optimization remains challenging. In this study, the metal-ion injection density is explored as a diffusive parameter of conductive filament in organic memristors. Additionally, artificial synapse bio-realistic developed using...
Abstract With increasing demand for wearable electronics capable of computing huge data, flexible neuromorphic systems mimicking brain functions have been receiving much attention. Despite considerable efforts in developing practical neural networks utilizing several types artificial synapses, it is still challenging to develop complex computations due the difficulties emulating continuous memory states a synaptic component. In this study, polymer conductivity analyzed as crucial factor...
We demonstrate the first-ever surface modification of green CdSe/ZnS quantum dots (QDs) using bromide anions (Br-) in cetyl trimethylammonium (CTAB). The Br- ions reduced interparticle spacing between QDs and induced an effective charge balance QD light-emitting devices (QLEDs). fabricated QLEDs exhibited efficient injection because emission quenching effect their enhanced thin film morphology. As a result, they maximum luminance 71,000 cd/m2 external current efficiency 6.4 cd/A, both...
Solutionp-type thin-film transistors, consisting of sol-gel-processed CuO films, were fabricated. The optoelectric properties sol-gel-processed, CuO-based back gate transistors investigated, and a detectivity 1.38 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> (cm Hz xmlns:xlink="http://www.w3.org/1999/xlink">1/2</sup> W xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> ) was achieved. This for is higher than that the previously...
Neuromorphic electronics attract significant attention as a new computing architecture. Despite much effort for achieving practical neuromorphic systems, it is still challenging to construct synapse array ideal complex neural networks. Herein, novel strategy developing highly integrated crossbar of one‐selector–one‐memory (1S–1R) by systematically engineering ion injection demonstrated. In the proposed synapse, an electrochemical metallization (ECM) memristor consisting unstable filaments...
Abstract Novel, low‐voltage, high‐detectivity, solution‐processed, flexible near‐infrared (NIR) photodetectors for optoelectronic applications are realized and their properties investigated the first time. This is achieved by synthesizing Ag 2 Se nanoparticles (NPs) in aqueous solutions, depositing highly crystalline thin films at 150 °C with redistributed NPs inks. The high conductivity low trap concentration of annealed result from formed inside improved film quality, respectively. These...
Y-doped SnO2 thin film transistors were successfully fabricated by means of sol-gel process. The effect Y concentration on the structural, chemical, and electrical properties sol-gel-processed films was investigated via GIXRD, SPM, XPS; corresponding transport also evaluated. dopant, Y, can control free carrier suppressing formation oxygen vacancy inside semiconductors due to its lower electronegativity SEP. With an increase Ywt%, it observed that crystallinity decreased, operation mode...
The initial electrical characteristics and bias stabilities of thin-film transistors (TFTs) are vital factors regarding the practical use electronic devices. In this study, dependence positive stress (PBS) instability on an threshold voltage (VTH) its origin were analyzed by understanding roles slow fast traps in solution-processed oxide TFTs. To control VTH TFTs, indium (InOx) semiconductor was doped with aluminum (Al), which functioned as a carrier suppressor. concentration oxygen...
Exciton-polaritons confined in plasmonic cavities are hybridized light-matter quasiparticles, with distinct optical characteristics compared to plasmons and excitons alone. Here, we demonstrate the electric tunability of a single polaritonic quantum dot operating at room temperature electric-field tip-enhanced strong coupling spectroscopy. For nanoplasmonic tip cavity variable dc local field, dynamically control Rabi frequency corresponding polariton emission, crossing weak coupling. We...
Thin‐film solar cells based on hydrogenated amorphous silicon (a‐Si:H) and conjugated polymers have been studied extensively. However, organic–inorganic hybrid tandem incorporating the two materials as subcells are yet to be extensively studied. Here, a computational study optimal design of achieve maximum possible efficiency is presented. The optical simulations predict an cell, desirable for wide range spectral response high efficiency. optimum combination thicknesses a‐Si:H organic...
With an increase in the demand for smart wearable systems, artificial synapse arrays flexible neural networks have received considerable attention. A synaptic device with a two-terminal configuration is promising complex because of its ability to scale crossbar array architecture. To realize practical high density, it essential achieve reliable electrode lines that act as signal terminals. However, effective method develop intrinsically has not been developed. In this study, we achieved...
This study examines the effect of annealing time Y2O3 passivation layer on electrical performances and bias stabilities sol–gel-deposited SnO2 thin-film transistors (TFTs). The environmental TFTs were examined. After optimizing layers in TFTs, field-effect mobility was 7.59 cm2/V•s, VTH 9.16 V, subthreshold swing (SS) 0.88 V/decade, on/off-current ratio approximately 1 × 108. shifts only −0.18 +0.06 V under negative positive stresses, respectively. channel thickness oxygen-vacancy...
Sol-gel-processed Y2O3 films were used as active channel layers for resistive random access memory (RRAM) devices. The fabricated ITO/Y2O3/Ag RRAM devices exhibited the properties of conventional bipolar A triethylamine stabilizer with a high vapor pressure and low surface tension was added to realize local electric field area. During drying high-temperature post-annealing processes, large convective flow enhanced elevation, increased -OH groups accelerated hydrolysis reaction aggregation....