A5086690050- Silicon Nanostructures and Photoluminescence
- Graphene research and applications
- Luminescence Properties of Advanced Materials
- Diamond and Carbon-based Materials Research
- Glass properties and applications
- Semiconductor materials and devices
- Ion-surface interactions and analysis
- Carbon Nanotubes in Composites
- Fullerene Chemistry and Applications
- Boron and Carbon Nanomaterials Research
- Gas Sensing Nanomaterials and Sensors
- Photorefractive and Nonlinear Optics
- Electron and X-Ray Spectroscopy Techniques
- Thin-Film Transistor Technologies
- GaN-based semiconductor devices and materials
- ZnO doping and properties
- Microwave Dielectric Ceramics Synthesis
- Advanced Chemical Physics Studies
- Acoustic Wave Resonator Technologies
- Ga2O3 and related materials
- Electronic and Structural Properties of Oxides
- Superconductivity in MgB2 and Alloys
- Design Education and Practice
- High Entropy Alloys Studies
- Catalytic Processes in Materials Science
Ural Federal University
2015-2024
Institute of Physics and Technology
2017-2024
Institute of Physics and Technology
2013-2023
Hong Kong Polytechnic University
2023
Abstract Time‐resolved photoluminescence from Si nanocrystals produced by 1100 C thermal annealing of SiO /SiO multilayers were investigated tunable laser excitation, achieving a detailed excitation/emission pattern in the visible and UV range. The emission lineshape is gaussian curve inhomogenously broadened because size distribution nanocrystals, excitation spectrum consists overlap two bands centered around 3.4 5.1 eV. mapping luminescence spectral components with lifetime points out...
The study of magnetism without the involvement transition metals or rare earth ions is considered key to fabrication next-generation spintronic devices.
Results of the investigation photoluminescence (PL) mechanisms for silicon dioxide films implanted with ions (100 keV; 7 × 1016 cm−2) and carbon (50 1015–1.5 1017 are presented. The spectral, kinetic thermal activation properties quantum dots (Si, C SiC) formed by a subsequent annealing were studied means time-resolved luminescence spectroscopy under selective synchrotron radiation excitation. Independent dot PL excitation channels involving energy transfer from SiO2 matrix point defects...
High temperature superconductivity does not necessarily require correlated electron systems with complex competing or coexisting orders. Instead, it may be achieved in a phonon-mediated classical superconductor having high Debye and large electronic density of states at the Fermi level material light atoms strong covalent bonds. Quasi-1D conductors seem promising due to Van Hove singularities their states. In this sense, quasi-1D carbon structures are good candidates. thin nanotubes, ~15 K...
Abstract The photoluminescence properties of α‐Zn 2 SiO 4 nanoparticles formed in the by means ion implantation and subsequent 900 °C, 1 hour annealing air atmosphere. Both X‐ray diffraction, optical (PL) spectra confirm formation willemite phase Zn matrices. characteristic 2.4 eV PL band observed resembles classical :Mn phosphor, though no manganese were introduced into samples. excitation demonstrate contribution silica states, thus suggesting interphase energy transfer mechanism. Thermal...
The problem of exciting UV and VUV light interference affecting experimental photoluminescence excitation spectra is analysed for the case thin transparent films containing arbitrarily distributed emission centres. A numerical technique supplied software aimed at modelling phenomenon correcting distorted are proposed. Successful restoration results synchrotron data ion-implanted silica show that suggested method has high potential.