A5035873621- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Copper-based nanomaterials and applications
- Perovskite Materials and Applications
- Semiconductor materials and interfaces
- Solid-state spectroscopy and crystallography
Fuzhou University
2021-2025
Tan Kah Kee Innovation Laboratory
2021-2025
Flexible Cu2 ZnSn(S,Se)4 (CZTSSe) solar cells show great potential due to non-toxicity and low cost. The quality of CZTSSe absorber suffering from the high-temperature selenization process is key overcoming open-circuit voltage (VOC ) deficit obtaining high efficiency. In this work, authors develop a technique improve layer by pre-evaporation selenization. This method provides saturated selenium vapor at beginning promote crystallization process. oversaturated source greatly shortens...
Hysteresis is used to predict perovskites solar cells recombination properties, implying that hysteresis a double-edged sword for hybrid perovskite.
The severe carrier recombination at the CZTSSe/CdS heterojunction interface and high toxicity of Cd limit further development flexible Cu2ZnSn(S, Se)4 (CZTSSe) solar cells. Here, we apply a suitable environmentally friendly Zn1–xSnxO (ZTO) buffer layer to suppress in cell for first time. ZTO layers with good qualities have been successfully obtained by varying Sn/(Zn + Sn) value. has an efficiency 8.7%, which is highest reported Cd-free CZTSSe so far. optimal device more ideal diode...
Flexible CZTSSe solar cells have attracted much attention due to their earth-abundant elements, high stability, and wide application prospects. However, the environmental problems caused by toxicity of Cd in buffer layers restrict development flexible cells. Herein, we develop a Cd-free CZTSSe/ZnO cell. The influences ZnO films on device performances are investigated. light absorption capacity is enhanced removal CdS layer. optimal thickness appropriate annealing temperature 100 nm 200 °C....
Abstract Ion doping is an effective strategy for achieving high‐performance flexible Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells by defect regulations. Here, a Li&Na co‐doped applied to synergistically regulate defects in CZTSSe bulks. The quality absorbers with the uniformly distributed Li and Na elements are obtained using solution method, where acetates (LiAc NaAc) as additives. concentration of harmful Zn anti‐site decreased 8.13% after incorporation, that benign increased 36.91%...
Antimony sulfide (Sb 2 S 3 ) solar cells have attracted extensive attention in silicon‐based tandem cells. The performance of Sb devices fabricated by the vacuum method is limited sulfur vacancies ( V and surface oxide defects during high‐temperature processes. Herein, amorphous film based on low‐temperature rapid thermal evaporation (RTE) technique to overcome loss. Moreover, a sulfur‐atmosphere recrystallization strategy further developed obtain high‐quality absorbers from film. element...
Flexible Cu2ZnSn(S,Se)4 (CZTSSe) solar cells have wide application prospects. N-type window layers and contact among the an important effect on properties of flexible CZTSSe cells. Here, we present a modified structure for with (CdS/ITO) instead traditional (CdS/ZnO/ITO) higher performance lower cost. The device realizes 9.2% efficiency improved fill factor (FF) from 57.7 to 63.6%. Systematic physical measurements show that increase in FF comes significant decrease series resistance (Rs). To...
Kesterite-based Cu2ZnSn(S, Se)4 (CZTSSe) thin-film solar cells have attracted great interest in the field of photovoltaic technology due to their earth-abundant and environment-benign constituents. However, efficiency CZTSSe reaches a bottleneck stage 12.6%, which has been improved from aspects absorption layer interface contact. Herein, effect oxygen-doped molybdenum selenide (Mo(Se1–x, Ox)2) on back contact investigated using SCAPS software, revealing that oxygen doping could regulate band...
The buffer layer plays a critical role in high‐performance flexible Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cell. conventional CdS causes the photoelectric performance loss and pollution of toxic Cd. Herein, ultrathin Zn 0.8 Sn 0.2 O (ZTO) engineering is proposed to reduce interface recombination Cd content. An acts as passivation protect CZTSSe passivate its surface defects. To solve problems decreased carrier collection capacity caused by thinning layer, ZTO with low resistivity high...
The traditional CdS buffer layers in flexible CZTSSe solar cells lead to light absorption losses and environmental pollution problems. Therefore, the study of Cd-free layer is very important for realization environmentally friendly efficient cells. Zn 1– x Mg O (ZnMgO) Sn (ZnSnO) alternate are studied this using simulation package cell capacitance simulator (SCAPS-1D) numerical model, theoretical analysis further verified by results experiments. We simulate performance CZTSSe/Zn X ( = Mg/Sn)...
Abstract Double ion doping is an effective strategy for efficiently flexible Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells, simultaneously relieving the adverse effects of various defects. Here, a Li&Na co-doped applied to synergistically inhibit detrimental bulk defects in CZTSSe absorbers and improve devices performances. A power conversion efficiency ( PCE ) 10.53% with certified 10.12% cell has been achieved. The space charge limited current (SCLC) temperature-dependent conductivity (TDC)...