A5031696584- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- ZnO doping and properties
- GaN-based semiconductor devices and materials
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Lasers and Optical Devices
- Thin-Film Transistor Technologies
- Acoustic Wave Resonator Technologies
- Microwave Engineering and Waveguides
- Ga2O3 and related materials
- Ferroelectric and Piezoelectric Materials
- Semiconductor materials and interfaces
- Advanced Semiconductor Detectors and Materials
- Silicon Nanostructures and Photoluminescence
- Anodic Oxide Films and Nanostructures
- Copper-based nanomaterials and applications
- Silicon Carbide Semiconductor Technologies
- Quantum Dots Synthesis And Properties
- Nanowire Synthesis and Applications
- Silicon and Solar Cell Technologies
- Molecular Junctions and Nanostructures
- Photonic and Optical Devices
- Chalcogenide Semiconductor Thin Films
- Copper Interconnects and Reliability
- Radio Frequency Integrated Circuit Design
National Cheng Kung University
2013-2022
Kent State University
2022
I-Shou University
2017
National Kaohsiung Marine University
2010
Institute of Microelectronics
2004-2008
Kao Yuan University
2002
University of Illinois Urbana-Champaign
1988-1993
National Sun Yat-sen University
1991
National Tsing Hua University
1980
Valence-subband structures of GaAs-Ga1−xAlxAs quantum wells growth in the [001], [111], and [110] directions are calculated based on bond-orbital model. The effective mass for first subband (111)-oriented is found to be substantially smaller than that (001)-oriented well widths narrower 70 Å. (110)-oriented display large anisotropy, with masses along two different in-plane ([001] [11̄0]) differing by almost one order magnitude. It also Al composition has a strong effect hole mass....
Ti is deposited on single silicon wafer and then forms TiSi2 by thermal annealing in vacuum. In the steam oxidation, first dissociates a compound SiO2. After formation of reaches saturation level, substrate Si rapidly diffuses through to form SiO2, while remains inert. A two-step oxidation process thus described. The calculated activation energy reaction 46.2 kcal/mol, that diffusion 32 kcal/mol.
The effect of hydrogen peroxide (H2O2) treatment on the microstructure and luminescent properties ZnO thin films has been investigated. Governed by high-resolution transmission electron microscopy selected-area diffraction patterns, oxygen radicals dissociated from H2O2 solution at room temperature substantially changed polycrystalline film into an insulator. In addition, photoluminescence spectra showed that had nearly no intensity ultraviolet emission, whereas it significantly enhanced...
Low leakage current density (as low as 10/sup -8/ A/cm/sup 2/ at an applied voltage of 5 V) and high breakdown electrical field (larger than 4.5 MV/cm) the liquid phase chemical-enhanced oxidized GaAs insulating layer enable application to MOSFET. The oxide is found be a composite Ga/sub 2/O/sub 3/, As, As/sub 3/. n-channel depletion mode MOSFET's are demonstrated I-V curves with complete pinch-off saturation characteristics can seen. A transconductance larger 30 mS/mm achieved which even...
A novel selective high resistivity region (SHRR) is created under the p-pad metal electrode of a normal GaN light emitting diode. In conventional designs, generated opaque absorbed or reflected by contact and lost. SHRR design, area selectively given higher resistance, reducing current flow generation contact. Under constant testing, normally passing through instead distributed over visible (i.e., useful) device, resulting in significantly increased light-output power luminous efficiency.
The liquid‐phase chemical‐enhanced oxidation technique has been demonstrated to be an effective means of growing stable native films on GaAs. gallium‐ion‐containing solution results in a fairly high rate near room temperature. pH value the appears dominant factor kinetics oxidation. Due enhancement Ga‐containing cations solution, window initial values from approximately 4.0 4.5 is found optimum range for oxide growth. pH‐incorporated mechanism provides consistent interpretations unusual...
A 3-dB coupler by implementing microstrip-to-coplanar waveguide (CPW) via-hole transitions is proposed. The proposed coupler, with the advantages of wider coupled line widths and spacing without using any bonding wires, can eliminate uncertain factors conventional Lange couplers caused printed circuit board (PCB) manufacturing processes. be easily fabricated on a single-layer PCB substrate instead multilayer substrates. Good agreements between simulation measurement in frequency range from...
This work is to reveal the novel technique of liquid phase deposition silicon dioxide (SiO2) films which will increase rate and also improve film quality. It well known that at a lower temperature without residual OH− on substrate difficult achieve. Therefore, it important treat wafer before deposition. The surface dipped into hydrofluoric acid (HF) usually terminated with hydrogen (H) has hydrides (Si–H) react water so hydroxyls (Si–OH) can be obtained. No grown clean Si native oxide. model...
An anodic alumina oxide (AAO) film with nano-roughening is added on the top window layer of AlGaInP light-emitting diodes (LEDs) to improve light extraction device. The AAO has a natural porosity provide scattering centers at surface, allowing an increase emission intensity no loss or damage semiconductor material. Further, fabricated refractive index about which intermediate between those air and GaP. By inserting this ambient GaP, it broadens critical angle for reduces internal reflection....
Conventional LEDs always pursue the high brightness for solid-state lighting, however, they exhibit very low frequency bandwidth of tens MHz. As an application, visible light communication (VLC) is not only illumination but also data transmission communication, which a kind optical wireless that uses white ray as medium. In this study, we investigate fabrication and characterization high-modulation GaN-based light-emitting diodes. The response mainly limited by its diffusion capacitance...
Porous anodic aluminum oxide (AAO) is deposited on a 5 cm × tin‐doped indium (ITO)/glass substrate, and the AAO/ITO/glass structure thus formed used to reduce amount of unreacted Al inside AAO template, thereby reducing transmittance AAO/glass structure. The enhancement achieved by modulating diameter pores varying applied bias. proposed can be at high bias (up 120 V) improve uniformity current density. Following pore‐widening treatment posttreatment annealing, morphologies were also investigated.
This article presents a chemical modification process to grow silicon dioxide (SiO2) on gallium arsenide (GaAs) substrate using liquid phase deposition (LPD) at extremely low temperature (∼40 °C). In this process, pretreatment of the wafer by ammonia solution with buffer kept pH=11–12 enriches OH radical formation GaAs surface, enhancing SiO2 deposition, providing good film quality, and reliability. The LPD rate is up 1303 Å/h. refractive index about 1.423 growth 40 °C. When used fabricate...
The band structures of In1−xGaxAs-InP strained-layer quantum wells are investigated theoretically in the bond-orbital model. For small x, well material is subject to a compressive biaxial strain which lifts HH1 subband further apart from LH1 subband, resulting smaller in-plane effective mass for holes. large becomes tensile and lifted upward with respect HHl subband. x near critical value, where LHl energy levels cross each other, valence-band structure undergoes direct-to-indirect transition.
By inductively coupled plasma (ICP) etching, a selective high barrier region (SHBR) was fabricated below the p-pad metal electrode for modifying injection current distribution on p-type GaN of GaN-based light-emitting diodes (LEDs). Through analysis noise power spectra, samples with ICP etching treatment have excess nitrogen vacancies at selectively etched surface GaN; thus, they lower hole concentration than as-grown sample, resulting in larger height carrier transport. With this SHBR,...
A new composite nanostructure, placing two circle Ag nanoparticles (NPs) on the surface of a SiO2 ellipsoid nanoparticle (abbreviated as [email protected]), was established to analyze extinction spectra using finite-difference time-domain (FDTD) method. We would show that constructed protected] nanostructure had exhibited better performance compared an isolated NP. Furthermore, we optimize by tuning structural parameters including angle NPs and aspect ratios could prove with end-to-end...