A5103235915- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and interfaces
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Nanostructures and Photoluminescence
- Terahertz technology and applications
- Thin-Film Transistor Technologies
- Copper Interconnects and Reliability
- Optical and Acousto-Optic Technologies
- Spectroscopy and Laser Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Photonic and Optical Devices
- Advanced Semiconductor Detectors and Materials
Auburn University
2015-2022
Simon Fraser University
2016
Capital Normal University
2010
Lehigh University
2002
The channel conduction in 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs) are highly impacted by charge trapping and scattering at the interface. Even though nitridation reduces interface trap density, still plays a crucial role increasing resistance these transistors. In this work, dominant mechanisms distinguished for inversion layer electrons holes using temperature body-bias-dependent Hall measurements on nitrided lateral MOSFETs. of transverse electric (Eeff) carrier...
In this letter, it is demonstrated that 4H-SiC MOSFETs with borosilicate glass (BSG) as the gate dielectric result in significantly higher channel mobility than standard nitride oxide annealed devices, due to lower density of near-interfacial traps at BSG/SiC interface. Using a thin Antimony-doped surface layer conjunction BSG results room temperature. The field-effect such devices found be 180 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Lateral MOSFET devices with a thin surface counter-doped layer using Sb and As without NO passivation have been fabricated characterized. The results demonstrate that counter-dope the interface significant trap while in combination there is superposition of both counter-doping related performance enhancement. In addition, by varying counter doping level, universal mobility characteristics passivated has identified.
In this work, we studied the behavior of gate oxide (GOx) breakdown 1200V 4H-SiC DMOSFETs by a screening process voltage ramp (vramp). By employing vramp between 40-50V on 50nm GOx, early failures below 50V, which could be infant or extrinsic in time-dependent-dielectric-breakdown (TDDB) testing, were screened out. addition, results indicate that correlate to density large pit defects epi-wafer as well area devices, have implications epi quality required for MOSFETs and achievable yield...
We report a transmission electron microscopy (TEM) study of the impacts phosphorus and boron passivation processes at 4H-SiC/SiO2 interfaces. The chemical electronic structures these interfaces have been analyzed using high-resolution TEM spatially resolved energy-loss spectroscopy (EELS), uncovering range phenomena caused by presence B P within their respective boro- phosphosilicate glass (BSG/PSG) layers. process was observed to induce roughness SiC/PSG interface on order 100s nm. Within...
To investigate the mechanism by which Sb at SiO2/SiC interface improves channel mobility of 4H-SiC MOSFETs, 1 MHz capacitance measurements and constant deep level transient spectroscopy (CCDLTS) were performed on Sb-implanted MOS capacitors. The reveal a significant concentration donors near interface. Two donor related CCDLTS peaks corresponding to shallow energy levels in SiC observed close Furthermore, show that same type near-interface traps found conventional dry oxide or NO-annealed...
In this work, we have investigated the effect of Antimony counter-doping in channel region 4H-SiC MOSFETs with moderately doped p-body, relevant for power applications. Using process, improved sub-threshold slope and high mobility been achieved conjunction threshold voltage. Our results indicate that improvement transport is associated Sb donors close to surface, which negligible on interface trap density.
In this paper the interface trap densities (D/sub it/) of 6H- and 4H-SiC MOSFETs in subthreshold region have been studied. Interface were extracted as a function energy (E/sub T/) from transfer characteristics. We show these increase exponentially approaching onset strong inversion for both polytypes, D/sub it/(E/sub is higher 4H than 6H through region. These results are consistent with previous reports.
We present a polarization-controlled terahertz (THz) wave spectroscopic imaging modality to investigate the anisotropy of detected materials. The polarization emitted THz is controlled be horizontal and vertical by changing relative phase fundamental second-harmonic waves in two-color laser-induced air plasma generation configuration. industrial sprayed-on-foam-insulation (SOFI) characterized measuring its azimuthal angle dependent response. This work demonstrated that technique can used for...
This paper describes a new opto-mechanical scanner that is hopeful for terahertz imaging in security applications. The target of using this portal screening personnel high-resolution concealed threat objects. It not only applied to active but also passive Terahertz imaging. wave can penetrate many materials are opaque visible and infrared light, such as plastics, cardboard, textiles so on. So the technology has potential be applicable inspection at airports, stations other public place. Now,...
In this work, we investigate the effect of Boro-silicate glass (BSG) gate dielectric in conjunction with Antimony (Sb) surface doped channels lateral 4H-SiC MOSFETs. It has been reported that BSG gated MOSFETs have a high channel mobility ~100 cm 2 /V∙s for wide range transverse electric fields along large threshold voltage V T ~5V lightly p-epitaxial layers [1,2]. For vertical power heavily p-wells, it is expected would cause an even further increase (~10 V) which be undesirable. Therefore...