A5011685763- Photonic and Optical Devices
- Optical Network Technologies
- Neural Networks and Reservoir Computing
- Advanced Fiber Laser Technologies
- Photorefractive and Nonlinear Optics
- Advanced Photonic Communication Systems
- Photonic Crystals and Applications
- Semiconductor Lasers and Optical Devices
- Ferroelectric and Piezoelectric Materials
- Electronic and Structural Properties of Oxides
- Semiconductor materials and devices
- Acoustic Wave Resonator Technologies
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Mechanical and Optical Resonators
- Magnetic and transport properties of perovskites and related materials
- Advanced Sensor and Energy Harvesting Materials
- Advanced Fiber Optic Sensors
- Optical Coatings and Gratings
- Multiferroics and related materials
- Analytical Chemistry and Sensors
- Plasmonic and Surface Plasmon Research
- Polymer Surface Interaction Studies
- Advancements in Semiconductor Devices and Circuit Design
- Sensor Technology and Measurement Systems
Lumiphase (Switzerland)
2020-2025
Sanatorium Kilchberg
2021-2023
IBM Research - Zurich
2016-2022
Lund University
2013
To develop a new generation of high-speed photonic modulators on silicon-technology-based photonics, materials with large Pockels coefficients have been transferred to silicon substrates. Previous approaches focus realizing stand-alone devices dedicated substrates, incompatible the fabrication process in foundries. In this work, we demonstrate monolithic integration electro-optic based effect barium titanate (BTO) thin films into back-end-of-line integrated circuit (PIC) platform. Molecular...
Barium titanate (BaTiO3) has become an attractive material to extend the functionalities of silicon photonics platform because its large Pockels coefficient more than 1000 pm/V. BaTiO3 integrated epitaxially on silicon-on-insulator substrates can be structured in passive and electro-optic photonic devices using slot-waveguide geometries, both which have been demonstrated. However, all demonstrated so far suffer from high optical propagation losses ∼40–600 dB/cm, limits their performance...
Significant progress has been made in integrating novel materials into silicon photonic structures order to extend the functionality of circuits. One these promising optical is BaTiO3 or barium titanate (BTO) that exhibits a very large Pockels coefficient as required for high-speed light modulators. However, all previous demonstrations show noticable reduction effect BTO thin films deposited on substrates compared bulk crystals. Here, we report strong dependence their microstructure, and...
Integrated ferroelectric plasmonic modulators featuring large bandwidths, broad optical operation range, resilience to high temperature and ultracompact footprint are introduced. Measurements show a modulation bandwidth of 70 GHz stability up 250 °C. Mach-Zehnder interferometer with 10-μm-long phase shifters were operated at 116 Gbit/s PAM-4 72 NRZ. Wide open eye diagrams extinction ratios beyond 15 dB found. The fast robust devices apt an employment in industrial environments.
A high-speed plasmonic barium titanate (BTO, BaTiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) Mach-Zehnder modulator is presented. We combine nanoscale plasmonics with BTO as solid-state active material and silicon nitride (SiN) for versatile low loss waveguiding, integrate them in a monolithic platform. demonstrate processed onto foundry-produced SiN. The 15 µm long features flat electro-optic frequency response up to 70 GHz...
We report on the stabilization of ferroelectric HfxZr1−xO2 (HZO) films crystallized using a low thermal budget millisecond flash lamp annealing technique. Utilizing 120 s 375 °C preheat step combined with pulses, characteristics can be obtained which are comparable to that achieved 300 650 rapid anneal. X-ray diffraction, capacitance voltage, and polarization hysteresis analysis consistently point formation phase HZO. A remanent (Pr) ∼21 μC/cm2 coercive field (Ec) ∼1.1 MV/cm in 10 nm thick...
In order to bring the diverse functionalities of transition metal oxides into modern electronics, it is imperative integrate oxide films with controllable properties onto silicon platform. Here, we present asymmetric LaMnO3/BaTiO3/SrTiO3 superlattices fabricated on layer thickness control at unit-cell level. By harnessing coherent strain between constituent layers, overcome biaxial thermal tension from and stabilize c-axis oriented BaTiO3 layers substantially enhanced tetragonality, as...
Abstract Epitaxial growth of SrTiO 3 (STO) on silicon greatly accelerates the monolithic integration multifunctional oxides into mainstream semiconductor electronics. However, oxide superlattices (SLs), birthplace many exciting discoveries, remain largely unexplored silicon. In this work, LaNiO /LaFeO SLs are synthesized STO‐buffered (Si/STO) and STO single‐crystal substrates, their electronic properties compared using dc transport X‐ray absorption spectroscopy. Both sets show a similar...
In this paper we introduce a field diagnostic device based on the combination of advanced bio-sensing and photonics technologies, to tackle emerging endemic viruses causing swine epidemics, consequently significant economic damage in farms.The is use microring resonators fabricated silicon nitride with CMOS compatible techniques.In paper, designed photonic integrated circuit (PIC) sensors are presented characterized, showing an optimized performance terms optical losses (30 dB per ring)...
In this work, we demonstrate InGaAs-on-lnsulator FinFETs on silicon with optimized on/off trade-off showing record performance. This is achieved by using carefully designed source/drain spacers and doped extensions to mitigate the off-current, typically high in narrow band-gap materials, as part of a CMOS compatible replacement-metal-gate process flow. Using technology, devices LG = 20 nm, width 10 nm Wfin=15 achieve on-current 350 μA/μm(IOFF=100 n A/μm VDD=0.5 V), for scaled III-V FETs Si,...
We investigate the ferroelectric domain architecture and its operando response to an external electric field in ${\mathrm{BaTiO}}_{3}$-based electro-optic heterostructures integrated on silicon. By noninvasive optical second-harmonic generation, we identify preexistence of in-plane ($a$-) domains dispersed within a predominantly out-of-plane- ($c$-) oriented matrix. Monitoring poling behavior respective populations, show that spontaneous polarization these $a$-domains lack predominant...
We demonstrate BTO-enhanced silicon photonics enabling compact, low-loss modulator PICs delivering net PAM4 data rates below HD-FEC threshold of 200 Gb/s in a driver-less setup with linear Rx DSP, at 9 fJ/bit electrical power dissipation.
We discuss the possibility of significantly enhancing nonlinear electro-optical response in strained perovskite $\mathrm{BaTi}{\mathrm{O}}_{3}$. First-principles calculations predict enhancement for both compressive and tensile strain. The physical origin can be traced to strain-induced phonon softening that results diverging first-order susceptibility. Within Landau-Ginzburg-Devonshire formalism we demonstrate how, turn, this divergence a second-order susceptibility Pockels coefficient. Our...
We demonstrate the first electro-optic modulator exploiting Pockels effect, monolithically integrated on an advanced Si photonics platform. This novel technology outperforms photonic modulators in modulation efficiency, losses, and static tuning power. The devices, based barium titanate thin films 200 mm substrates, show excellent VπL (0.3 Vcm) VπLα (1.7 VdB), work at high speed (25 Gbps), can be tuned low power consumption (100 nW). Our concept serves as a key building block EPIC for next...
We demonstrate a 110-GHz BTO Mach-Zehnder modulator integrated on foundry- produced silicon nitride for 340 Gbit/s data links. This approach, featuring nano-scale plasmonics and highly nonlinear BTO, proves to be viable platform next-generation Tbit/s
This work addresses structural and nonequilibrium effects of the interactions between well-defined cationic poly(amidoamine) PAMAM dendrimers generations 4 8 anionic surfactant sodium dodecyl sulfate (SDS) at hydrophilic silica-water interface. Neutron reflectometry quartz crystal microbalance with dissipation monitoring were used to reveal adsorption from premixed dendrimer/surfactant solutions as well sequential addition preadsorbed layers dendrimers. both adsorb silica a compact...
Barium titanate is a promising perovskite material, exhibiting numerous materials properties advantageous for range of applications, such as ferroelectricity, piezoelectricity, high dielectric constant, and large electrooptic coefficients. It represents potential candidate the implementation bandwidth low energy consuming modulators optical communication in future integrated systems. Integration components with electronic circuits on silicon requires, however, suitable temperature deposition...
As the optical analogue to integrated electronics, photonics has already found widespread use in data centers form of interconnects. global network traffic continues its rapid expansion, power consumption such circuits becomes a critical consideration. Electrically tunable devices photonic contribute significantly total budget, as they traditionally rely on inherently power-consuming phenomena plasma dispersion effect or thermo-optic for operation. Here, we demonstrate ultra-low-power...
An integrated ferroelectric plasmonic Mach-Zehnder modulator is demonstrated to work in a direct-detection setup with 72 Gbit/s NRZ modulation format. The device works reliably beyond 130°C an extinction ratio 15 dB.
The escalating datacenter traffic emphasizes the need for high-performance, cost-effective, and energy-efficient optical transceivers. We demonstrate barium titanate (BTO) electro-optic Mach-Zehnder modulators (MZMs) integrated on silicon photonic platform, surpassing all-silicon counterparts in key metrics: modulation efficiency (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">π</sub> L = 4.8 Vmm), loss (∼2 dB), static tuning power (∼100 μW),...
We demonstrate multi-level optical weights embedded in a silicon photonic platform based on ferroelectric domain switching. Ferroelectric barium titanate integrated resonator structures is used as the memory material. By applying short voltage pulses of 100ns, we can switch fractions domains and thus change transmission waveguides by more than one order magnitude non-volatile way. achieve 10 distinct levels, show iterative switching synaptic element polarity, magnitude, number applied...