A5103062621- Advancements in Photolithography Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Electron and X-Ray Spectroscopy Techniques
- Image Processing Techniques and Applications
- Parallel Computing and Optimization Techniques
- Optical Coatings and Gratings
- Surface Roughness and Optical Measurements
- Magnetism in coordination complexes
- Distributed and Parallel Computing Systems
- Advanced optical system design
- Physics of Superconductivity and Magnetism
- Advanced Surface Polishing Techniques
- Nanofabrication and Lithography Techniques
- Advanced Graph Neural Networks
- Graph Theory and Algorithms
- Advanced NMR Techniques and Applications
- Low-power high-performance VLSI design
- Semiconductor materials and interfaces
- Quantum and electron transport phenomena
- Adversarial Robustness in Machine Learning
- High-pressure geophysics and materials
- Force Microscopy Techniques and Applications
- Glass properties and applications
- 2D Materials and Applications
- Laser Material Processing Techniques
University of Warwick
2024-2025
University of Birmingham
2024-2025
Lawrence Livermore National Laboratory
2004-2009
AT&T (United States)
1986-1996
Nokia (United States)
1980-1995
In this work we demonstrate the power, speed, and effectiveness of an automated rules-based approach for performing optical proximity correction. The applies to both conventional phase-shifting mask layouts lithography. Complex imaging, substrate, process phenomena can be folded into comparatively few rules parameters. Using simple arithmetic, these parameters pre-compensate layout combined effects. consist edge corner biasing feature edges adding sub-resolution assist features. This paper...
Materials composed of spin-1 antiferromagnetic (AFM) chains are known to adopt complex ground states that sensitive the single-ion-anisotropy (SIA) energy (<a:math xmlns:a="http://www.w3.org/1998/Math/MathML"><a:mi>D</a:mi></a:math>), and intrachain (<b:math xmlns:b="http://www.w3.org/1998/Math/MathML"><b:msub><b:mi>J</b:mi><b:mn>0</b:mn></b:msub></b:math>) interchain (<c:math...
The electromigration lifetimes were determined for an as-yet unexplored combination of long lines (up to 3cm.) and narrow linewidths (down 1 μm) evaporated magnetron sputter-source deposited Al-Cu-Si films. the sputtered films found be significantly smaller than those e-beam latter displayed unusually large improvement in lifetime finer (1.5 lμm). Failure modes analyzed correlations made with a new microstructural parameter incorporating film grain-size, its sigma degree preferred orientation.
We investigate the magnetic properties of $S=1$ antiferromagnetic diamond lattice, Ni$X_{2}$(pyrimidine)$_{2}$ ($X$ = Cl, Br), hosting a single-ion anisotropy (SIA) orientation which alternates between neighbouring sites. Through neutron diffraction measurements $X$ Cl compound, ordered state spins are found to align collinearly along pseudo-easy-axis, unique direction created by intersection two easy planes. Similarities in magnetization, exhibiting spin-flop transitions, and susceptibility...
We investigate the magnetic properties of <a:math xmlns:a="http://www.w3.org/1998/Math/MathML"><a:mrow><a:mi>S</a:mi><a:mo>=</a:mo><a:mn>1</a:mn></a:mrow></a:math> antiferromagnetic diamond-lattice, <b:math xmlns:b="http://www.w3.org/1998/Math/MathML"><b:mrow><b:mi>Ni</b:mi><b:msub><b:mi>X</b:mi><b:mn>2</b:mn></b:msub><b:msub><b:mrow><b:mo>(</b:mo><b:mi>pyrimidine</b:mi><b:mo>)</b:mo></b:mrow><b:mn>2</b:mn></b:msub></b:mrow></b:math> <c:math...
Accelerated damage experiments were conducted to better predict the lifetime of fused silica optics under Deep-UV lithographic conditions. Real-time monitoring UV-induced absorption showed that 193-nm radiation produced color centers four five times faster 213-nm radiation. Since two-photon coefficient at is also about larger than value, a initiated process was supported. Refractive index changes in irradiated samples extrapolated from stress-induced birefringence distributions and...
One of the most dramatic effects that one encounters when attempting optical imaging 0.5 k ASIC gate levels is truncation or shortening transistor geometries. This reduces wafer process latitude and in some cases even eliminates level-to-level overlay margin. We investigate a number techniques, including various complexities mask compensation modified illumination to mitigate this phenomenon manners sufficiently general accommodate layouts.
A multiple-layer blank structure with two shifter layers coated on a quartz substrate is proposed for the fabrication of phase-shifting masks. The thickness these such that they induce 180° phase shift light compared to air. On top layers, an opaque layer coated. patterned during mask. bottom only repair missing defects. But main purpose this act as etch or give end point defects Using yttrium fluoride stop/end (bottom layer), we have demonstrated feasibility blanks. This acts stop...
Five different fused silica types were evaluated for their resistance to UV-induced compaction and color center formation at 193-nm. Real-time monitoring of color- center-induced absorption showed three distinct dependencies transmission on pulse count. The initial rates varied by well over a factor ten between the materials tested while compaction-induced birefringence most four. Of likely candidates lithographic applications, Corning Excimer Grade 7940 was least prone Suprasil 311 lowest...
Power consumption in VLSI circuits is currently a major issue the semiconductor industry. first order design constraint many applications. However, growing class of applications need extreme low power but do not high speed. Sub-threshold circuit can be used for these Unfortunately, sub-threshold exhibit an exponential sensitivity to process, voltage and temperature (PVT) variations. In this paper we implement test robust subthreshold flow which uses level PVT compensation stabilize...
The chemistry and preliminary lithographic characteristics of chemically amplified positive acting (CAMP) resist formulations that meet the deep-UV lithography requirements low optical density high sensitivity were described recently.11 This paper examines performance a specific comprised poly (t-butoxycarbonyloxystyrene-sulfur dioxide) onium salt, triphenylsulfonium hexafluoroarsenate as photoacid generator. was evaluated function resin molecular properties, sensitizer loading effects...
The impact of phase-shifting mask topography on wafer exposure was studied via simulations and experimentation using masks fabricated by etching the quartz to define shifted areas. influence refractive index chromium layer shown be minimal for all simulations, assumed 2.5 - 2.0 j at 248 nm. As profiles marginally linewidth resist patterns, simulated intensity assumes vertical profiles. Moreover, it experimentally that have a large results. For profiles, light going through etched portion is...
Human Body Model (HBM) and Charged Device (CDM) electrostatic discharge (ESD) stressing have been utilized to evaluate the susceptibility of input protection circuits on a fineline NMOS test chip. Failure analysis results failure thresholds are reported as function local device parameters such channel length width global layout variables power supply routing circuit placement. It is demonstrated that HBM determined primarily by geometry. Failures occur localized heating filamentation across...
Abstract Comparisons of high‐performance computers based on their peak floating point performance are common but seldom useful when comparing real workloads. Factors that influence sustained extend beyond a system's floating‐point units, and applications exercise machines in complex diverse ways. Even it is possible to compare systems performance, other considerations affect which machine best for given organization. These include the cost, facilities requirements (power, floorspace, etc.),...
Magnetometry and magnetoresistance (MR) data taken on the van der Waals ferromagnet <a:math xmlns:a="http://www.w3.org/1998/Math/MathML"><a:mrow><a:msub><a:mi>Fe</a:mi><a:mrow><a:mn>3</a:mn><a:mo>−</a:mo><a:mi>x</a:mi></a:mrow></a:msub><a:msub><a:mi>GeTe</a:mi><a:mn>2</a:mn></a:msub></a:mrow></a:math> (FGT) reveal three distinct contributions to MR: a linear negative component, contribution from closed Fermi-surface orbits, an enhancement proportional square of applied magnetic field which...
Materials composed of spin-1 antiferromagnetic (AFM) chains are known to adopt complex ground states which sensitive the single-ion-anisotropy (SIA) energy ($D$), and intrachain ($J_{0}$) interchain ($J'_{i}$) exchange scales. While theoretical experimental studies have extended this model include various other scales, effect lack a common SIA axis is not well explored. Here we investigate magnetic properties Ni(pyrimidine)(H$_{2}$O)$_{2}$(NO$_{3}$)$_{2}$, chain compound where tilting Ni...
Resolution enhancement techniques have been explored extensively in the last few years to reliably extend optical lithography smaller features. In fact, remarkable depth of focus and resolution enhancements achieved for certain types However, proximity effects can render these irrelevant because they cause such severe linewidth changes that even in-focus lines are incorrectly sized. Other researchers attempted solve this problem using a wide variety different approaches. Their methods common...
The difference in critical dimension between isolated and dense features of the same coded size a circuit pattern must be minimized to enhance performance. Altering numerical aperture (NA) partial coherence ((sigma) ) an exposure system can help reduce this `proximity effect.' Using state-of-the-art (variable NA, variable (sigma) deep- UV stepper (248 nm wavelength), we exposed silicon wafers under wide range lithographic conditions. After measuring linewidths with scanning electron...
As the resolution of optical lithography reaches 0.35 μm and below, linewidth can no longer be predicted by aerial image alone. Accordingly, we incorporate thin-film interference within resist/substrate stack postexposure bake diffusion effects in our latent formation model. The impact resist thickness antireflective coatings on proximity effect process latitude has been examined. Taking various into account, simulation matches experimental data very well. Using enhanced tool, have studied...
The technique of direct aerial image metrology (AIM) has been applied to characterize the performance a microlithographic lens. AIM is potentially faster and more reproducible than measurements obtained by scanning electron microscopy. Direct measurement eliminates both process variations associated with resist processing as well subjective nature evaluating profiles. We have used evaluate some primary aberrations 248 nm stepper compare results those latent scatterometry, proven for...