A5071914262- Advanced Semiconductor Detectors and Materials
- Chalcogenide Semiconductor Thin Films
- Semiconductor Quantum Structures and Devices
- Ion-surface interactions and analysis
- Metal and Thin Film Mechanics
- Electronic and Structural Properties of Oxides
ARC Centre of Excellence for Transformative Meta-Optical Systems
2022-2024
The University of Western Australia
2022-2024
Australian National University
2022
We report on the structural and optical properties of heteroepitaxial II–VI CdTe (211)B buffer layers with strained CdZnTe/CdTe superlattice layers, investigated by employing non-destructive methods including high-resolution x-ray diffraction, cathodoluminescence, photoluminescence spectroscopy. X-ray diffraction reciprocal space mapping measurements revealed that are coherently strained, leading to a spread in double-crystal rocking curve full-width at half-maximum values but better...
Abstract Van der Waals epitaxial (vdW) growth of semiconductor thin films on 2D layered substrates has recently attracted considerable attention since it provides a potential pathway for realizing monolithically integrated devices and flexible devices. In this work, direct HgCdTe (111) transparent mica is achieved via molecular beam epitaxy. The full width at half maximum the ω‐mode X‐ray diffraction peak measured to be around 306 arc sec. Mid‐wave infrared photoconductors based as‐grown...
The ever-present demand for high-performance HgCdTe infrared detectors with larger array size and lower cost than currently available technologies based on lattice-matched CdZnTe (211)B substrates has fuelled research into heteroepitaxial growth of CdTe buffer layers lattice-mismatched alternative a orientation. Driven by the large lattice mismatch, (Hg)CdTe can result in (133)B-orientated material, which, however, been less explored comparison to (211)B-oriented growth. Herein, we report...
This work investigates the structural properties of HgCdTe thin films grown on InSb (211)B substrates using molecular beam epitaxy (MBE). The Cd composition is accurately determined non-destructive approaches based x-ray diffraction (XRD) and reflectance infrared spectroscopy. as-grown exhibit characteristic surface defects with a size 7–10 μm density ∼105 cm−2, resulting in an additional spread XRD full width at half maximum. Cross-sectional transmission electron microscopy results indicate...
The nanoindentation technique has been applied to study the elasto-plastic properties and characteristics of Hg1-xCdxSe grown on GaSb (2 1 1)B substrates with molecular beam epitaxy. Young's modulus samples is determined be 38 (±3), 44 (±6), 52 (±7), 60 54 (±5) GPa, while hardness 0.67 (±0.05), 0.77 (±0.09), 0.93 1.02 (±0.04), 1.09 (±0.07) GPa for x values 0.19, 0.24, 0.31, 0.36, 0.46, respectively. indentation response purely elastic small loads corresponding penetration depths below ∼ 15...
In this paper, we present a study on the direct growth of Hg0.7Cd0.3Te thin films layered transparent van der Waals mica (001) substrates through weak interface interaction molecular beam epitaxy. The preferred orientation for growing is found to be (111) due better lattice match between layer and underlying substrate. influence parameters (mainly temperature Hg flux) material quality epitaxial studied, optimal flux are approximately 190 °C 4.5 × 10−4 Torr as evidenced by higher crystalline...