A5068660722- Semiconductor materials and devices
- CCD and CMOS Imaging Sensors
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Semiconductor materials and interfaces
- Analog and Mixed-Signal Circuit Design
- VLSI and FPGA Design Techniques
- Neural Networks and Applications
- Low-power high-performance VLSI design
- Neural dynamics and brain function
- Embedded Systems Design Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Chalcogenide Semiconductor Thin Films
- Surface and Thin Film Phenomena
- Semiconductor Quantum Structures and Devices
- Hearing Loss and Rehabilitation
- Neuroscience and Neural Engineering
- Advanced Semiconductor Detectors and Materials
- Solid-state spectroscopy and crystallography
- Parallel Computing and Optimization Techniques
- Electronic and Structural Properties of Oxides
- Semiconductor Lasers and Optical Devices
- Hearing, Cochlea, Tinnitus, Genetics
- Quantum Mechanics and Applications
- Silicon Carbide Semiconductor Technologies
California Institute of Technology
2003-2023
University of Minnesota
1977-2013
Pasadena City College
2013
Synaptics (United States)
1988-2005
Texas Instruments (United States)
2005
Heidelberg University
1989-1990
University of California, Los Angeles
1973
The Aerospace Corporation
1969
University of Southern California
1964
Brookhaven National Laboratory
1958
It is shown that for many problems, particularly those in which the input data are ill-conditioned and computation can be specified a relative manner, biological solutions orders of magnitude more effective than using digital methods. This advantage attributed principally to use elementary physical phenomena as computational primitives, representation information by values analog signals rather absolute signals. approach requires adaptive techniques mitigate effects component differences....
Striking evidence for a fundamental covalent-ionic transition in the electronic nature of solids is presented.Received 6 March 1969DOI:https://doi.org/10.1103/PhysRevLett.22.1433©1969 American Physical Society
The position of the Fermi level at a metal-semiconductor interface relative to conduction band has been found be constant fraction semiconductor gap for all but 3 14 group IV or III-V semiconductors studied. In cases, was essentially independent metal work function. This general result is not inconsistent with limited theories surface state energies now available. three exceptional cases can understood in terms first-order perturbation correlated similar observed energy (111) zone edge....
An analog electronic cochlea has been built in CMOS VLSI technology using micropower techniques. The key point of the model and circuit is that a cascade simple, nearly linear, second-order filter stages with controllable Q parameters suffices to capture physics fluid-dynamic traveling-wave system cochlea, including effects adaptation active gain involving outer hair cells. Measurements on test chip suggest matches both theory observations from real cochleas.< <ETX...
The permittivity of single-crystal single-domain strontium titanate has been measured in detail the [001], [011], and [111] directions, as a function temperature (from 4.2 to 300 °K), electric field −23 000 +23 V/cm, frequency 1 kHz 50 MHz). free energy crystal is determined polarization with parameter. Curie-Weiss law satisfied range 60–300 °K, giving Curie 30 ± 2 °K for three orientations. Lyddane-Sachs-Teller (LST) relation temperatures between fields 0 12 V/cm. A generalized LST used...
The operation of a new class devices employing the principle tunnel emission is discussed. It shown that controlled electron source may be obtained with use metal-insulator-metal diode structure where second metal layer very thin. A triode geometry secured by addition an additional insulator and collector layer. Limitations on operating frequency, current density, transfer ratio such are Experimental results structures which employ several materials presented. Successful triodes vacuum...
Tests have been performed on a number of Ta-${\mathrm{Ta}}_{2}$${\mathrm{O}}_{5}$-Au diodes various thicknesses over range temperatures to determine the mechanism current flow. The proposed for flow is field ionization trap-type states at low and thermal these high temperature. High-temperature voltage-current data low-temperature comparisons between forward reverse characteristics agree well with bulk-limited hypothesis are in striking disagreement barrier mechanisms. A discontinuity oxide...
We have developed a new floating-gate silicon MOS transistor for analog learning applications. The memory storage is nonvolatile; hot-electron injection and electron tunneling permit bidirectional updates. Because these updates depend on both the stored value terminal voltages, synapse can implement function. derived memory-update rule from physics of processes, investigated in prototype array. Unlike conventional EEPROM devices, allows simultaneous reading writing. Synapse arrays therefore...
The authors describe recent developments in the theory of early vision that led from formulation motion problem as an ill-posed one to its solution by minimizing certain 'cost' functions. These cost or energy functions can be mapped onto simple analog and digital resistive networks. optical flow is computed injecting currents into networks recording resulting stationary voltage distribution at each node. believe these networks, which they implemented complementary metal-oxide-semiconductor...
The theoretical and experimental results for white noise in the low-power subthreshold region of operation an MOS transistor are discussed. It is shown that measurements consistent with predictions. Measurements photoreceptors-circuits containing a photodiode transistor-that theory reported. photoreceptor illustrate intimate connection equipartition theorem statistical mechanics calculations.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
The Schottky barrier for holes on common III-V and II-VI semiconductors contacted by Au is shown to depend only the anion electronegativity.Received 16 September 1975DOI:https://doi.org/10.1103/PhysRevLett.36.56©1976 American Physical Society
There have been several recent reports of barrier height studies on metal-semiconductor interfaces. Metals widely different work functions evaporated onto Si and GaAs surfaces indicated that in each case the energy difference between semiconductor conduction band edge and Fermi level at interface,φ_(Bn), was essentially independent metal, which indicates that is fixed by surface states. In present measurements have made a number zinc-blende semiconductors to determine (a) if barriers...
Based upon the delay of Elmore, a single value is derived for any node in general RC network. The effects parallel connections and stored charge are properly taken into consideration. A technique called tree decomposition load redistribution introduced that capable dealing with networks without sacrificing number desirable properties networks. An experimental simulator SDS (Signal Delay Simulator) has been developed. For all examples tested so far, this runs two to three orders magnitude...
Photovoltaic and space-charge capacitance measurements have been used to study the height of Schottky barrier at metal-semiconductor interface a series metals evaporated onto ``vacuum cleaved'' samples n-type CdS n- p-type GaAs. Although heights for metal-CdS increase with increasing metal work function as predicted by simple theory, significant deviations were noted. The measured on metal-GaAs different temperatures show very little dependence appear be fixed relative valence band edge...