A5046396078- Photonic and Optical Devices
- Optical Network Technologies
- Advanced Photonic Communication Systems
- Advanced Fiber Laser Technologies
- Semiconductor Lasers and Optical Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor Quantum Structures and Devices
- Optical Systems and Laser Technology
- Laser Design and Applications
Shanghai Jiao Tong University
2022-2024
Mode division multiplexing (MDM) has garnered significant attention for its potential to enhance communication capacity. In this paper, we present the first time, best of our knowledge, a 3D-integrated parallel multimode transmitter, featuring two fibers, with both TE0 and TE1 modes transmitted data multiplexing. Each channel exhibits an electro-optic (EO) bandwidth ∼45 GHz, enabling total transmission 2 × 106.25 Gbps upon four-level pulse amplitude modulation (PAM-4).
Abstract Silicon microring resonators (MRRs) with embedded PN junctions have emerged as pivotal components in high-capacity optical interconnects, serving modulators or photodetectors due to their compact size, low power consumption, high bandwidth, and inherent wavelength selectivity. However, resonance wavelengths are highly sensitive fabrication-induced variations—nanometer-scale deviations waveguide dimensions can result significant shifts—necessitating effective post-fabrication tuning...
We propose a physically realizable temporal tail-cutting algorithm for Ge-Si photodetectors. achieve 160 Gbps data transmission with the transmitter dispersion eye closure quaternary (TDECQ) enhanced from 5.13 dB to 2.64 dB, when is engaged.
This paper presents a silicon-based InAs quantum dot laser for optical transmitter, operating up to 80℃, supports 4 λ × 32 Gbps data transmission, making it ideal high-efficiency, cost-effective interconnects.
We propose and demonstrate a C-band silicon micro-ring modulator (MRM) with an on-chip inductor to mitigate the trade-off between electro-optic (EO) bandwidth extinction ratio (ER). The outer ER of proposed MRM's 200 Gbps four-level pulse amplitude modulation (PAM-4) eye-diagram is 1.0 dB at 3 insertion loss (IL) operation point, EO 64.1 GHz. rises 3.0 when IL 6 dB, modest decrease in 55.5 Specifically, reduction MRM 2.9 times lower than that without inductor.
We present an amplitude-invariant phase shifter based on a PIN diode embedded in Mach-Zehnder Interferometer for optical phased arrays. The dynamic power contrast is lower than 0.42 dB over π shift.
<title>Abstract</title> The escalating demand for high-speed, low-power data transmission between processing units (XPUs) has underscored the limitations of traditional electrical input/output (I/O) technologies. Silicon photonics emerges as a promising solution chip-level optical I/O by integrating Kerr microcombs, microring-based modulators, and photodetectors. In this study, we demonstrate record-breaking error-free achieving 2.3 Tbit/s per fiber port. This feat is enabled dark soliton...
<title>Abstract</title> The exponential growth of data traffic propelled by cloud computing, artificial intelligence, and the Internet Things demands innovative advancements in optical communication technology. Wavelength division multiplexing (WDM) has been instrumental enhancing transmission rates within high-speed modules. However, as single-lane surpass 200 Gbps O-band transmission, chromatic dispersion fibers emerges a critical barrier, especially at wavelengths distant from...
Mode-division multiplexing (MDM), which could further increase the capacity and flexibility of communication systems, has attracted much attention. In this Letter, we demonstrate a proof-of-principle silicon mode-insensitive modulator based on balanced Mach-Zehnder interferometer that realize modulation both TE0 TE1 modes using horizontal PN junction. The junction is offset from center waveguide to n-type doped region modulate effectively. An adiabatic directional coupler used as 3-dB power...
In this paper, we demonstrate a reconfigurable device that could realize modulation on TE<sub>0</sub> polarization or TM<sub>0</sub> selectively. The consists of pair TM<sub>0</sub>-TE<sub>1</sub>/TE<sub>1</sub>-TM<sub>0</sub> mode converters, two TE<sub>0</sub>-TE<sub>1</sub> exchangers, and TE<sub>1</sub> micro-ring modulator. 32 Gb/s on-off keying is successfully demonstrated both for polarization.
In this paper, we demonstrate how a realistic sub-system-level verification could be performed on packaged optical transceiver, including on-chip silicon photonic components, its package, and electrical chips' performance altogether.Silicon photonics has been considered as promising candidate for ultra-compact, high speed, cost-effective integration platforms. One commercial chip typically includes dozens of from waveguides to functional passive active devices. Such chips are then with...