A5020662186- Semiconductor materials and interfaces
- Silicon and Solar Cell Technologies
- Silicon Nanostructures and Photoluminescence
- Additive Manufacturing and 3D Printing Technologies
- Thin-Film Transistor Technologies
- Advanced Surface Polishing Techniques
- Semiconductor materials and devices
- Laser Material Processing Techniques
- Additive Manufacturing Materials and Processes
Laser-induced forward transfer (LIFT) has been shown to be a useful technique for the manufacturing of micron-scale metal structures. LIFT is high-resolution, non-contact digital printing method that can support fabrication complex shapes and multi-material structures in single step under ambient conditions. However, printed often suffer from inferior mechanical, electrical, thermal properties when compared their bulk counterparts, are prone enhanced chemical corrosion. This due mostly...
Polysilicon receives attention nowadays as a means to incorporate 3D-structured photonic devices into silicon processes. However, doping of buried layers typical 3D structure has been challenge. We present method for polysilicon by solid phase diffusion. Using an underlying oxide layer dopant source facilitates diffusion dopants the bottom side layer. The is grown on top layer, after latter doped ion implantation. Post-growth heat treatment drives in from polysilicon. To model process, we...
Threading dislocation density (TDD) of epitaxial Ge layer on Si was explored by defect etching. samples were etched chromium free Dash etching solution, and the influence post process annealing studied. The first part this work deals with comparison two characterization methods for TDD: AFM etch pits TEM. rate morphology solution pure is introduced. introduced various conditions after growth.
Abstract not Available.