A5023406845- Perovskite Materials and Applications
- Conducting polymers and applications
- ZnO doping and properties
- Organic Electronics and Photovoltaics
- 2D Materials and Applications
- Quantum Dots Synthesis And Properties
- Ga2O3 and related materials
- Thin-Film Transistor Technologies
- Chalcogenide Semiconductor Thin Films
- Organic Light-Emitting Diodes Research
- Porphyrin and Phthalocyanine Chemistry
- Nanowire Synthesis and Applications
- Gas Sensing Nanomaterials and Sensors
- Solid-state spectroscopy and crystallography
- MXene and MAX Phase Materials
- Luminescence and Fluorescent Materials
- Molecular Junctions and Nanostructures
- Magnetism in coordination complexes
- Transition Metal Oxide Nanomaterials
- Quantum and electron transport phenomena
- Advanced Sensor and Energy Harvesting Materials
- Quantum Information and Cryptography
- Copper-based nanomaterials and applications
- Metal complexes synthesis and properties
- Advanced Memory and Neural Computing
Pohang University of Science and Technology
2020-2025
Yunnan Metallurgical Group (China)
2023
Peking University
2018-2022
Harbin Institute of Technology
2021
Samsung (South Korea)
2021
Kunming University
2015-2020
Peking University Shenzhen Hospital
2019
Yunnan University
2015-2016
Abstract The p-type characteristic of solution-processed metal halide perovskite transistors means that they could be used in combination with their n-type counterparts, such as indium–gallium–zinc-oxide transistors, to create complementary metal–oxide–semiconductor-like circuits. However, the performance and stability perovskite-based do not yet match which limit broader application. Here we report high-performance p-channel thin-film based on inorganic caesium tin triiodide semiconducting...
We proposed a new full-color display framework QD-OLEDs, where blue OLEDs are used as pump light, and red green QDs printed on color filters conversion layers.
Abstract Colloidal quantum dot (QD) emitters show great promise in the development of next-generation displays. Although various solution-processed techniques have been developed for nanomaterials, high-resolution and uniform patterning technology amicable to manufacturing is still missing. Here, we present large-area, high-resolution, full-color QD utilizing a selective electrophoretic deposition (SEPD) technique. This technique utilizes photolithography combined with SEPD achieve fast...
Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. Herein, we report hysteresis-free p-channel thin-film (TFTs) based methylammonium tin iodide (MASnI3) rationalise effects (I/Br/Cl) anion engineering film quality improvement tin/iodine vacancy suppression, realising high hole mobilities 20...
Abstract Compared to polycrystalline semiconductors, amorphous semiconductors offer inherent cost-effective, simple and uniform manufacturing. Traditional hydrogenated Si falls short in electrical properties, necessitating the exploration of new materials. The creation high-mobility n-type metal oxides, such as a-InGaZnO (ref. 1 ), their integration into thin-film transistors (TFTs) have propelled advancements modern large-area electronics new-generation displays 2–8 . However, finding...
Semiconducting ink based on 2D single-crystal flakes with dangling-bond-free surfaces enables the implementation of high-performance devices form-free substrates by cost-effective and scalable printing processes. However, lack solution-processed p-type semiconducting inks high mobility is an obstacle to development complementary integrated circuits. Here, a versatile strategy doping Br2 reported enhance hole orders magnitude for transistors layered materials. -doped WSe2 show field-effect...
Abstract Organometal halide perovskites have been considered as promising candidates for high‐performance low‐cost photodetectors. Nonetheless, perovskite photodetectors are usually built on glass or polymer substrates, their UV‐C (200–280 nm) photodetection ability is quite limited due to the high absorption of substrates. Here, a uniform UV photodetector array which integrates photodiodes with inorganic CsPbBr 3 quantum dot (QD) fluorophor reported. not only acts an efficient...
Hybrid phototransistors based on InGaZnO (IGZO) metal oxide thin-film transistors (TFT) and a photoabsorbing capping layer such as perovskite (MAPbI3) are promising low-cost device for developing advanced X-ray UV flat-panel imagers. However, it is found that the introduction of MAPbI3 inevitably damages IGZO channel during fabrication, leading to deteriorated TFT characteristics off-current rising threshold voltage shift. Here, we report an effective approach improving performance...
Cobalt phthalocyanine nanowires with new crystal structure and broad optical absorption spectra were fabricated by using organic vapor phase deposition method. The morphology, properties of CoPc characterized SEM, X‐ray diffraction, Fourier transform infrared UV‐visible spectroscopies. Analyses diffraction patterns indicate that the represents a polymorph, which is designated J‐CoPc. These J‐CoPc high directionality (average diameter ∼50 nm) surprisingly possess much broader in visible...
The application of organic–inorganic perovskites has recently attracted increasing interest due to their excellent optoelectronic properties. As an emerging semiconductor, the doping capability and efficiency these materials require further clarification but have rarely been studied previously. In this study, diverse monovalent cations, Cu+, Na+, Ag+, are incorporated into phenethylammonium tin iodide ((PEA)2SnI4) perovskite, resultant lattice structural variation, film properties, thin-film...
ConspectusTwo-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) have demonstrated exceptional potential as materials for future complementary metal-oxide-semiconductor (CMOS) technology. This is primarily because of their atomic thickness and excellent electrical mechanical properties. With advancements in fabrication technology, electronic devices based on 2D TMD rapidly progressed from isolated units scientific experimentation to integrated circuits with practical...
Abstract Controlling defects and energy‐band alignments are of paramount importance to the development high‐performance perovskite‐based photodiodes. Yet, concurrent improvements in interfacial contacts defect reduction simply by tailoring bottom have not been investigated. An effective strategy is reported that can simultaneously improve structural introducing low‐dimensional contact (LDC) layers at interface. It found LDC‐based perovskites considerably suppress undesirable induced...
Abstract Tin–lead (Sn–Pb) based hybrid perovskite solar cell is investigated as a potential solution to extend the light absorption spectrum range, and reduce environmental hazard caused by lead in materials. Nonetheless, due instability of tin, Sn–Pb cells suffer from more severe efficiency degradation when compared lead‐based cells, which restricts its further development. Here, quaternary ammonium halide compound, Me 4 NBr, introduced passivate surface. The NBr effectively reduces surface...
Here, we report the fabrication of high-performance printable WSe2 transistors via doping p-type FeCl3 molecules (hole mobility: ∼1.5 cm2 V−1 s−1; on/off ratio: ∼106). A complementary inverter is demonstrated with p-WSe2 and n-MoS2 transistors, which highlights its potential for application in future two-dimensional material-based electronics.
Indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) exhibit high field-effect carrier mobility and low off-state current, which are attractive for speed noise photodetectors image sensor applications. However, with an optical band gap of ∼3.3 eV, the photodetection range IGZO TFTs is limited to short wavelength ultraviolet (UV) light. Here, we demonstrate a simple approach enhance performance IGZO-based phototransistors by incorporating layers solution-processed perovskite quantum...
Abstract Flat‐panel imagers have wide applications in industrial and medical inspections. Nonetheless, large area infrared imaging remains a challenge due to the fact that state‐of‐the‐art sensors are usually based on silicon or germanium technologies, which limited by wafer size. Recent advances low bandgap Sn–Pb perovskite photodiodes (PDs) indium gallium zinc oxide (IGZO) thin‐film transistors (TFTs) matrix backplane bring new opportunity for developing near‐infrared image sensor. As...
The exploration of stable and high-mobility semiconductors that can be grown over a large area using cost-effective methods continues to attract the interest electronics community. However, many mainstream candidates are challenged by scarce expensive components, manufacturing costs, low stability, limitations large-area growth. Herein, we report wafer-scale ultrathin (metal) chalcogenide for high-performance complementary standard room temperature thermal evaporation. n-type bismuth sulfide...
With the demand for high-performance and miniaturized semiconductor devices continuously rising, development of innovative tunneling transistors via efficient stacking methods using two-dimensional (2D) building blocks has paramount importance in electronic industry. Hence, 2D semiconductors with atomically thin geometries hold significant promise advancements electronics. In this study, we introduced memtransistors a thin-film heterostructure composed semiconducting MoS2 WSe2. Devices dual...
A 4th-generation Alpha microprocessor running at 1.2 GHz delivers up to 44.8 GB/s chip pin bandwidth and dissipates 125 W 1.5 V. It contains a 1.75 MB 2nd level write-back-cache, two memory controllers supporting 8 Rambus/sup TM/ channels 800 Mb/s, four 6.4 inter-processor communication ports, separate 10 port capable of GB/s. The measures 21.1/spl times/18.8 mm/sup 2/, 130 M transistors is fabricated in 0.18 /spl mu/m bulk CMOS process with 7 levels copper interconnect.
The optical properties of organic materials are very sensitive to subtle structural modification, and a proper understanding the structure-property relationship is essential improve performance electronic devices. phase transitions η-CuPc α-CuPc, then β-CuPc were investigated using In situ X-ray diffraction differential scanning calorimetry (DSC). five stages in phase-transition process from low high-temperature observed, which consisted (1) η-CuPc; (2) mixture η- α-CuPc; (3) η-, α- β-CuPc;...
A new polymorph of F<sub>16</sub>CuPc nanowires, the η phase, was fabricated for fast response and high sensitivity visible-NIR photo-detectors.
By using organic vapor phase deposition method, nickel phthalocyanines (NiPc) nanowires were successfully prepared, and the effects of heating temperature on structural optical properties NiPc investigated. Both crystal structures powders are studied by x-ray diffraction patterns (XRD) Fourier transform infrared spectra (FTIR). The lattice constants from fitting XRD a = 13.04 A, b 3.75 c 24.32 β 94.10°, belonging to space group monoclinic (P21/c). X-ray photo-electron spectroscopy (XPS)...
Atomically thin two-dimensional semiconductor molybdenum disulfide (MoS2) is considered an ideal n-type channel material for field-effect transistors (FETs) due to its immunity short-channel effects by dangling bond-free surface. However, sulfur atom dissociation or nonideal film deposition can easily lead vacancies (SVs) in the MoS2 film. These crystal imperfections create defects electronic structure, thereby limiting utility of this promising material. We introduce electron-withdrawing...