A5047707944- Chalcogenide Semiconductor Thin Films
- Nanowire Synthesis and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- ZnO doping and properties
- Quantum Dots Synthesis And Properties
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- Metal and Thin Film Mechanics
- Advanced Materials Characterization Techniques
- Electromagnetic Launch and Propulsion Technology
- 2D Materials and Applications
- Diverse Industrial Engineering Technologies
- Gas Sensing Nanomaterials and Sensors
- Metallurgical and Alloy Processes
- Advancements in Battery Materials
- Silicon Carbide Semiconductor Technologies
- Advanced Battery Technologies Research
- Non-Destructive Testing Techniques
- Spacecraft and Cryogenic Technologies
- Chemical and Physical Properties of Materials
- Transition Metal Oxide Nanomaterials
- Electron and X-Ray Spectroscopy Techniques
- Sensorless Control of Electric Motors
- Electric Power Systems and Control
Sumy State University
2011-2024
Pure (ZnSe) and europium doped (ZnSe:Eu) zinc selenide films were evaporated onto glass substrates using the close-spaced vacuum sublimation (CSVS) technique at different deposition conditions (substrate temperature).The fundamental optical parameters such as density, extinction coefficient, refraction index, real imaginary parts of dielectric constant, band gap evaluated in transparent region transmittance absorbance spectrum.Optical spectroscopy analysis shown that both cases deposited had...
The study of the structure-phase composition and electrophysical properties film alloys molybdenum nickel or iron were deposited by method simultaneous thermo-vacuum condensation was done.In a non-annealing state, samples remain biphasic.After heat treatment at 750 K in vacuum, formation metastable phases fcc-Ni3Mo (lattice parameter 0.360 nm) bcc-Fe2Mo (a 0.296 based on Ni Mo recorded concentrations atoms ferromagnetic metal 75 65 at.%respectively Investigation thermoresistive films...
The use of photovoltaic solar energy converters with nanowire cells is a promising direction for further development photovoltaics.Along this, significant interest in the properties Si, InP, GaAs, InGaN nanowires as elements high-efficiency photoconverters has formed new photovoltaics.The most relevant study structural, optical, electrical, temperature and other characteristics semiconductor nanowires.The paper presents results numerical simulation coaxial p-i-n structures based on Si InP...
The object of research is the physical processes electric energy storage in Li-ion batteries. problem being solved work related to lack reliable mathematical models batteries, which leads appearance undesirable effects or emergency situations when changing operating modes. In course work, battery based on electrochemical theory and electrical circuits were considered. six most common equivalent replacement schemes are presented. advantages disadvantages considered substitution given....
In this work there are presented a results of 3D-numerical simulation Nanowire FET (NW-FET) and FinFET n-type transistors with "Gate-all-around" "TRI-GATE" technologies based on "Silicon-on-Insulator" Si-channels. 3D structures describes modeled using TCAD Silvaco instruments. There the allowable electrical characteristics in temperature range 300-360 K. Numerical has been shown that usage proposed provides permissible values threshold voltage, sub-threshold swing, drain-induced barrier...
A perspective way for further increase in MOSFET transistors scaling value is the usage of Si, GaAs, ZnO nanowires and carbon nanotubes as channels between source drain.In this work, we present results a numerical simulation 3D with five n-type Si (SiNWFETs) based on SOI (Silicon-on-Insulator) technology Gate-all-around (GAA) structure.5-channel GAA SiNWFET structures are simulated by Silvaco TCAD tools.Their distinct electrical characteristics demonstrated, particular, valid values...
The operation of the basic functional element integrated circuit -the field-effect transistor -is based on drift electrons and holes in Si channel.With use stretching-compression crystal lattice substrate, by introducing impurity atoms, mobility carriers is somewhat reduced.At same time, considerable interest to nanowires (NWs) (Ge) solid solution as elements for formation highly efficient channels transistors necessitates studies their structural, electrical temperature characteristics.The...
In this work a structural and functional study of as-deposited annealed iron (Fe) nickel (Ni) heterogenous thin films deposited by electron-beam evaporation is carried out. For analysis are used transmission electron microscopy (TEM) selected-area diffraction (SAED). Fourier-transformed infra-red (FTIR) spectroscopy to analyze their compositional conditions measure thickness using the novel technique ("fringing"-effect). TEM has been shown that in both cases obtained Fe Ni (as-grown...
A robust system of vector control the angular speed rotor a synchronous electric drive for first zone without field weakening is given. The strategy maximum torque per ampere was used as optimal strategy. machine with permanent magnets located in middle study. Control algorithms were developed based on concept inverse dynamics problems. robustness automatic checked by varying active resistance stator winding research and evaluating quality transients electromechanical coordinates system....