- Graphite, nuclear technology, radiation studies
- Advanced Surface Polishing Techniques
- Silicon and Solar Cell Technologies
- Ion-surface interactions and analysis
- Material Properties and Applications
- Polymer Synthesis and Characterization
- Nuclear Physics and Applications
- Advancements in Photolithography Techniques
- Thin-Film Transistor Technologies
- Metal and Thin Film Mechanics
- X-ray Diffraction in Crystallography
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Synthesis and properties of polymers
- Advanced ceramic materials synthesis
- Nanofabrication and Lithography Techniques
- Semiconductor Quantum Structures and Devices
- Silicon Effects in Agriculture
- Diamond and Carbon-based Materials Research
- GaN-based semiconductor devices and materials
- Fusion materials and technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Polymer Nanocomposite Synthesis and Irradiation
- Material Science and Thermodynamics
- Silicon Nanostructures and Photoluminescence
Euphrosyne Polotskaya State University
2007-2025
Films of the AZ nLOF 2020, 2070 and 5510 negative photoresists (PR) with a thickness 0,95 – 6,1 μm, deposited on surface silicon wafers by centrifugation method, were studied indentation method. It was experimentally established that behavior 20XX series during differs dramatically. films have high adhesion to silicon; not even single cases cracking or peeling from substrate observed. Additional stabilizing treatment ion etching nLOF5510 leads their embrittlement an increase in microhardness...
The method of IR-spectroscopy using a module for diffuse reflection, the films negative photoresists AZ nLOF 5510 thick 0,99 μm, applied to surface silicon plates by centrifugation, were studied. Electron irradiation with an energy 3,5 MeV dose 7∙1016 cm-2 was carried out on ELU-4 linear accelerator electrons. It is shown that carbon-hydrogen bonds main component photoresist – phenol-formaldehyde resin - are stable up doses ~ (1–3)∙1016 cm-2. bands associated solvent disappear from spectrum...
The optical and strength properties of electron-irradiated films a polyimide composition (polyimide PI2610) deposited on the surface single-crystalline silicon wafers KDB-10 grade by centrifugation were studied. Irradiation with electrons an energy 5 MeV was carried out linear accelerator U-003 in dose range 1·1014 – 2·1015 cm–2. It has been experimentally established that at irradiation Ф = 1∙1014 cm–2, relaxation elastic stress fields film is observed, which expressed modification shape...
Films of the AZ nLOF 2020, 2070 and 5510 negative photoresists (PR) with a thickness 0,95 – 6,1 μm, deposited on surface silicon wafers by centrifugation method, were studied method IR-Fourier diffuse reflection spectroscopy. In reflectance spectra PR/silicon structures, absorption bands observed against background interference fringes. It allows technique to be used measure film or its refractive index. The most intense in series PR are stretching vibrations aromatic ring, pulsation carbon...
In recent years new types of resist for nano and submicronic lithography are intensively developed. As perspective materials various polymeric compositions on a basis thermally mechanically resistant polymers considered. The purpose the real work was studying possibility application microindentation scratching methods research strength properties films applied plates single-crystal silicon. an example positive diazoquinonenovolak photoresist 1,0–5,0 μm thick which were silicon brands with...
The strength properties of FP9120, SPR 700 and S1813 G2 SP15 diazoquinone novolac photoresist films
 on silicon irradiated by 5 MeV electrons with a fluence 3 1016 cm-2 were studied indentation. Misprints of
 the microindenter in films diazaquinone are barrel-shaped, which indicates presence
 tensile stresses that form during film drying. A destruction zone radial lateral cracks was observed
 around indenter prints, forming pattern "butterflies". It has been established...
The optical and strength properties of Kapton polyimide films implanted with manganese ions an energy 40 keV a dose 5·1016 – 1·1017 cm–2 at current density in the ion beam 4 μA/cm2 have been studied. It has experimentally established that during process implantation, modification thin nearsurface layer occurs not only on side, but also reverse side film. Radiationstimulated back surface film leads to formation up 5 μm thick increased microhardness. This may be due restructuring metastable...
The modification of the strength properties films implanted with Sb+ ions diazoquinone-novolac photoresist FP9120 on monocrystalline silicon during long-term storage was investigated by indentation method. dependence microhardness load after implantation nonmonotonic, due to presence elastic stresses at photoresist/silicon interface. During storage, their relaxation observed, which leads disappearance non-monotonicity dependences load. crosslinking phenol-formaldehyde resin molecules also...
The adhesion and strength properties of NFR 016b4 photoresist (PR) films for explosive lithography deposited on the surface KDB-10 single-crystal silicon wafers by centrifugation have been studied. It has found that they behave like brittle materials. FR microhardness measured at low loads was ~0,3 GPa, decreasing slightly with increasing film thickness. crack resistance parameters (fracture toughness coefficient K1С effective fracture energy γ) do not depend With load, a thin increased...
Optical and strength properties of films a polyimide composition (polyimide PI-2610) for creating sacrificial
 layer deposited on the surface single-crystal silicon plates KDB-10 brand by centrifugation are
 investigated. It has been established that they behave like elastoplastic materials. The true microhardness polyimide
 PI-2610, measured at load 2 g, was ~0,5 GPa. spectra disturbed total internal reflection
 (NPVO) PI-2610 were compared with NPVO pyrrole kapton...
The accumulation of unwanted long-lived radionuclides during the production 18F-based radiopharmaceuticals using IBA Cyclone 18/9 HC cyclotron is considered. Using high-resolution gamma-ray spectrometry with HPGe detectors, identification and assessment activity in activated components (stripper, target entrance window) "medical" 18-MeV were carried out. More than 20 have been identified irradiated water. Various mechanisms for entry longlived into water are described. results obtained great...