A5045853540- Plasma Applications and Diagnostics
- Plasma Diagnostics and Applications
- Metal and Thin Film Mechanics
- Silicon Nanostructures and Photoluminescence
- Gas Sensing Nanomaterials and Sensors
- Catalytic Processes in Materials Science
- Nanowire Synthesis and Applications
- Ion-surface interactions and analysis
- Diamond and Carbon-based Materials Research
- Laser-induced spectroscopy and plasma
- Chalcogenide Semiconductor Thin Films
- Phase-change materials and chalcogenides
- Vacuum and Plasma Arcs
- Quantum Dots Synthesis And Properties
- Semiconductor materials and devices
- Advanced ceramic materials synthesis
- Semiconductor materials and interfaces
- Inorganic Fluorides and Related Compounds
- Gyrotron and Vacuum Electronics Research
- Advanced materials and composites
- Boron and Carbon Nanomaterials Research
- Muon and positron interactions and applications
- Iron and Steelmaking Processes
- Engineering and Environmental Studies
- nanoparticles nucleation surface interactions
Institute of Chemistry of High-Purity Substances them. G.G.Devyatyh
2016-2025
N. I. Lobachevsky State University of Nizhny Novgorod
2025
Nizhny Novgorod State Pedagogical University
2018-2025
Nosov Magnitogorsk State Technical University
2024
Nizhny Novgorod State Technical University
2016-2023
Plasma (Russia)
2014-2019
Russian Academy of Sciences
2008-2016
Abstract Presenting a safe alternative to conventional compound quantum dots and other functional nanostructures, nanosilicon can offer series of breakthrough hyperthermia‐based therapies under near‐infrared, radiofrequency, ultrasound, etc., excitation, but the size range sensitize these is typically too large (>10 nm) enable efficient imaging functionality based on photoluminescence properties quantum‐confined excitonic states. Here, it shown that Si nanoparticles (NPs) are capable...
The transformation of organochlorine and organic impurities such as CCl4, C2H2Cl2, C2HCl3, C2Cl4, C2H2Cl4, CH4, C3H8, C4H10, C6H6 in the content range 10−2–10−6 wt.%, well BCl3 at level 3 × 10−2 was considered. A method has been developed for removing limiting carbon boron during process hydrogen reduction silicon tetrachloride a high-frequency arc gas discharge atmospheric pressure. thermodynamic gas-dynamic analyses plasma, along with behavior impurities, substances, trichloride,...
A silicon tetrachloride reduction in RF-arc-discharge (40.86 MHz) has been experimentally studied.
Plasma-chemical reduction of silicon and germanium fluorides with different isotopic composition by hydrogen at low pressure was studied experimentally. Samples natural polycrystalline "flakes" numbers 72 74 were obtained used to grow poly- single crystals the Czochralski method. The contamination most important impurities in each type determined. A chemical mechanism for process also proposed. It shown that direct method isotopically-enriched is suitable obtaining small amounts high-purity...
The report discusses the use of a new type plasma source hydrogen based on RF (13.56 MHz) arc discharge atmospheric pressure between two electrodes. This was used for reduction tetrafluorides silicon, boron and molybdenum. As result studies, main regularities process were established synthesized products determined. Samples carbides molybdenum prepared.