About
Contact & Profiles
A5066323443
Research Areas
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Video Surveillance and Tracking Methods
- Ferroelectric and Negative Capacitance Devices
- Advanced Image and Video Retrieval Techniques
- Nanowire Synthesis and Applications
- Face and Expression Recognition
KPC Medical College and Hospital
2018
10.1016/j.inffus.2025.103012
article
EN
Information Fusion
2025-02-01
Drain-to-source current of independently-driven double gate (ID-DG) MOSFET is analytically computed following Ortiz-Conde model in sub 100 nm channel length presence different high-K dielectrics. Fowler-Nordheim tunneling concept invoked due to reduced dielectric thickness; and front control tailored analyze the effect on pinch-off voltage. Excellent agreement observed with published literatures for high front-gate voltage when device lightly doped; which speaks favor work within dimensional...
10.1109/edkcon.2018.8770399
article
EN
2018 IEEE Electron Devices Kolkata Conference (EDKCON)
2018-11-01
10.1007/s00542-019-04595-w
article
EN
Microsystem Technologies
2019-08-22
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