A5101584685- ZnO doping and properties
- Ga2O3 and related materials
- GaN-based semiconductor devices and materials
- Nanowire Synthesis and Applications
- Luminescence Properties of Advanced Materials
- Quantum Dots Synthesis And Properties
- Advanced Sensor and Energy Harvesting Materials
- Quantum and electron transport phenomena
- Microwave Dielectric Ceramics Synthesis
- Gas Sensing Nanomaterials and Sensors
- Cold Atom Physics and Bose-Einstein Condensates
- Perovskite Materials and Applications
- Microwave Engineering and Waveguides
- Antenna Design and Analysis
- Optical properties and cooling technologies in crystalline materials
- Chalcogenide Semiconductor Thin Films
- Advanced Photocatalysis Techniques
- Antenna Design and Optimization
- Copper-based nanomaterials and applications
Fujian Institute of Research on the Structure of Matter
2020-2024
Chinese Academy of Sciences
2020-2024
Tan Kah Kee Innovation Laboratory
2023-2024
University of Chinese Academy of Sciences
2020-2024
Fuzhou University
2020
Academia Sinica
2020
Xidian University
2020
Zibo Vocational Institute
2007
The nearly strain-free GaN films were epitaxially grown successfully on the Au-coated c-plane sapphire substrate by a convenient chemical vapor deposition approach. growth of single crystalline epitaxial is self-patterned process. morphology, structure, compositions and optical properties as-synthesized materials characterized through field-emission scanning electron microscopy, atomic force X-ray diffraction, photoelectron spectroscopy, energy dispersive spectroscopy mapping, Raman...
The undesirable effects of the degraded device performance and shorter lifetime caused by polarization electric field induced polar GaN have contributed to an increasing interest in fundamental research promising applications nonpolar GaN. Herein, we demonstrate a strategy construct high-quality arrays well-aligned nanorods on Au-coated (100) γ-LiAlO2 substrates chemical vapor deposition method. During growth process, Au particles that were originally at tips found gradually disappear with...
A broadband miniaturized dual-polarized base station antenna for 5G application is proposed in this paper. The working frequency completely covers the Sub-6 GHz band (3300-3600 MHz). achieves ± 45° dual-polarization by two coaxial lines feeding and a pair of T-coupled structures placed vertically. radiation patch composed bent dipoles orthogonally, which reduces size radiator effectively. In addition, uses double-layer PCB structure rectangular on top layer makes better matched. relative...
The method to construct the three-dimensional (3D) ordered nanostructure of ZnO for improving its performance has attracted considerable attention and remains a challenging issue, which theoretical practical implications nanoscale applications such as optoelectronics gas sensors. Herein, we demonstrate straightforward chemical vapor deposition (CVD) technique epitaxial growth 3D cross-linked comb-like arrays on r-plane sapphire substrates. morphological, structural, optical properties...
Highly ordered Ga2S3 horizontal nanowires (NWs) on r-plane sapphire were successfully grown by chemical vapor deposition using carbothermal reduction reaction. By adjusting experimental conditions, the density of NWs has increased from 8.4 × 106 to 4.0 107 mm-2. The morphology, structure, composition and optical properties characterized through field emission scanning electron microscopy, atomic force microscope, transmission x-ray diffraction, Raman, photoelectron spectroscopy so on. Au...
As a representative ternary oxide semiconductor, the epitaxial growth of uniaxially aligned ZnGa2O4 nanowire arrays on common substrates remains challenging, owing to their lattice mismatch and differing volatility zinc gallium sources. Herein, we demonstrate controllable vertically well-aligned c-plane sapphire substrate by simple chemical vapor deposition method. To achieve strategic control composition ZnGa2O4, samples with different ratios source materials were synthesized, preferred...
Introducing polyhedral facets into a high surface-to-volume nanowire structure (i.e., serrate-shaped or screw thread-like nanowire) is an effective way for boosting the photoelectrochemical (PEC) activity. However, fabricating such nanowires with serrated surfaces remains challenge because it usually involves many complex processes, thus limiting mass Here, we demonstrate strategy natural growth of GaN on LiGaO 2 substrate by using Au catalyst-assisted vapor-liquid-solid (VLS) method. The...