A5108036133- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
- ZnO doping and properties
- Nanowire Synthesis and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Sensor and Energy Harvesting Materials
- Electron and X-Ray Spectroscopy Techniques
- Ga2O3 and related materials
- Advancements in Photolithography Techniques
- Gas Sensing Nanomaterials and Sensors
- Metal and Thin Film Mechanics
- Acoustic Wave Resonator Technologies
- Nanofabrication and Lithography Techniques
- Advanced Surface Polishing Techniques
- Plasma Diagnostics and Applications
- Advanced Memory and Neural Computing
- Semiconductor materials and interfaces
- Nanomaterials and Printing Technologies
- Thin-Film Transistor Technologies
- Semiconductor Quantum Structures and Devices
- Photonic and Optical Devices
- Ferroelectric and Negative Capacitance Devices
- Fluid Dynamics and Thin Films
- Energy Harvesting in Wireless Networks
CEA LETI
2014-2025
Institut polytechnique de Grenoble
2009-2025
Centre National de la Recherche Scientifique
2014-2025
CEA Grenoble
2009-2025
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2011-2025
Université Grenoble Alpes
2017-2025
Laboratoire des Technologies de la Microélectronique
2011-2024
Université Joseph Fourier
2014
In recent years, plasma enhanced atomic layer deposition (PEALD) has emerged as a key method for the growth of conformal and homogeneous aluminum nitride (AlN) films at nanoscale. this work, utilized PEALD reactor was equipped not only with traditional remote Inductively Coupled Plasma source but also an innovative additional power supply connected to substrate holder. Thus, we investigate here biasing effect on AlN film quality deposited (100) silicon. We report that by adjusting ion energy...
The controlled incorporation of dopants like copper into ZnO nanowires (NWs) grown by chemical bath deposition (CBD) is still challenging despite its critical importance for the development piezoelectric devices. In this context, effects addition nitrate during CBD NWs on Au seed layers are investigated in detail, where zinc and hexamethylenetetramine used as standard precursors ammonia an additive to tune pH. By combining thermodynamic simulations with structural analyses, we show that...
The screening effect in ZnO nanowires (NWs) coming from the high density of free electrons has emerged as one major issues for their efficient integration into piezoelectric devices. Herein, compensatory Cu doping NWs grown by chemical bath deposition high‐pH region using Cu(NO 3 ) 2 and ammonia additives is developed effects a postdeposition thermal annealing under oxygen atmosphere are investigated. It shown that dopants incorporated with an atomic [Cu]/[Zn] ratio range 50–65 ppm undergo...
Abstract The mass production of µLEDs requires an upscaling approach on 200 mm wafers, which implies the deployment a technology that achieves zero defectivity without liftoff. In this report, Nanoimprint lithography (NIL) processing is successfully optimized for nanostructuring GaN‐based Silicon‐On‐Insulator (SOI) substrates. etching SiO 2 /GaN/AlN/Si/SiO layers using different plasmas conducted and multi‐layer nanopillars 100–200 in diameter are fabricated. This generates zero‐defect...
ABSTRACT UV‐assisted nanoimprint lithography (UV‐NIL) has long been recognized as a potential nanopatterning method for polymer surfaces deposited on materials using flexible or solid stamps, enabling the development of micro nanophotonic systems. However, due to presence surface electrostatic field, electrohydrodynamic (EHD) instabilities, and redistribution used can occur, preventing correct transfer targeted designs substrate material. In this context, detailed theoretical experimental...
ZnO nanowires are considered as attractive building blocks for piezoelectric devices, including nano-generators and stress/strain sensors. However, their integration requires the use of metallic seed layers, on top which formation mechanisms by chemical bath deposition still largely open. In order to tackle that issue, nucleation growth Au layers with a thickness in range 5-100 nm thoroughly investigated. We show present two different populations nano-objects given morphology. The majority...
The fast and direct detection of small quantities biological chemical species is key importance for numerous biomedical applications. Extensive research has been conducted on nanoelectronic devices that can perform such with high sensitivity using silicon nanowires nanostructures. However, it was recently demonstrated Si material suffers a lack long-term stability in physiological environments at nanometer scale [1,2], hence not suited situ sensing molecules. results presented here are two...
We investigate the impact of aluminum-doped zinc oxide (AZO) as an ecofriendly bottom electrode for ZnO nanowire-based mechanical energy transducers. The AZO is grown using atomic layer deposition, followed by growth nanowires (NWs) pulsed-liquid injection metal–organic chemical vapor deposition. Al dopant concentration varied to obtain thin films with different morphologies, structural orientations, and electrical properties. Depending on film used platform, NW arrays can have a random or...
In this work, we study the structural and electrical properties of Hafnium Zirconium Oxide (HZO) thin films deposited by Hf0.5Zr0.5O2 single-target sputtering to fabricate a TiN/(14-/22 nm-thick) HZO/TiN stack. The analysis HZO performed in situ x-ray diffraction upon thermal annealing shows formation orthorhombic phase at temperatures as low 370 °C. X-ray photoelectron spectroscopy interestingly reveals an identical chemical composition sputtered target, i.e., Hf:Zr ratio 1:1....
ZnO nanowires are known as promising candidates for the development of highly efficient mechanical energy transducers using biocompatible and noncritical materials. However, decoupling different contributions to piezoelectric response coming from dimensionality effect, nature amount defects, density free charge carriers, surface traps is still lacking. The growing attractivity thus necessitates a thorough study on interplay among piezoelectricity process, carrier screening, depletion effects...
We have investigated the impact of different wet treatments on electrical performances germanium–tin (GeSn)-based p-MOS capacitors with 10% Sn. Atomic force microscopy (AFM) showed presence Sn droplets for degreased Ge0.9Sn0.1 surface, which were removed by HCl, HF, and HF:HCl treatments. On other hand, (NH4)2S NH4OH not fully able to remove these droplets. X-ray photoelectron spectroscopy (XPS) measurements confirmed AFM results highlighted efficiency in removing Ge native oxide, was case...
High Brightness Light-Emitting Diodes (HB-LEDs) are key devices for the solid state lighting applications. Nowadays, thermal management in LEDs packaging is one of bottlenecks preventing a wide use HB-LEDs systems. Thermal conduction has to be addressed at all levels but issue chip or device level most critical keep junction temperature as low possible. Chip On Board (COB) technology way integrating chips directly onto board which very promising since it enables achieving better...
Nanopatterning of GaN/AlN layers on Silicon-On-Insulator (SOI) substrates is discussed with the aim fabricating nanopillar arrays that can be used for subsequent GaN pendeo-epitaxy. The principle developed epitaxy process crystallites are grown deformable nano-pedestals able to rotate at growth temperature. objective control complete pattern profile GaN/AlN/Si/SiO2 pillars, both in lateral and vertical directions. Since a smaller pillar diameter should enhance rotation temperature, special...
The impact of different interfacial layers (ILs) on the electrical performances Au/Ti/HfO2/Ge0.9Sn0.1 metal oxide semiconductor (MOS) capacitors is studied. Parallel angle resolved x-ray photoelectron spectroscopy measurements show that germanium diffuses into HfO2 layer when no IL used. This results in an increase tin content at interface and a high state density. We demonstrate use prevents intermixing improves performance MOS capacitors. Several ILs are studied such as alumina (Al2O3)...
Abstract We report on the nanopatterning of horizontal and vertical germanium-tin (Ge 1− x Sn or GeSn) nanowires by inductively coupled plasma reactive ion etching for gate-all-around field effect transistors. First, a chlorine based chemistry has been investigated optimal conditions identified GeSn 6% alloys. Then, was optimized to etch high content alloys (up 15%) with anisotropy, smooth sidewalls selectivity versus hydrogen silsesquioxane hard mask. have shown that, in order obtain...
In emerging high-vacuum multi e-beams exposure tools, the release of hydrocarbonaceous species (precursor) by resists outgassing is unavoidable and leads to premature contamination optics projection systems. this work, we present an experimental methodology aiming at resist qualification. A specific setup was designed monitor induced phenomena irradiating coated on 100mm silicon wafer. The wafer can be exposed through micromachined membranes (called mimics) that are representative system...
This work focuses on the nanopatterning of sub-10 nm InGaAs fins by inductively coupled plasma reactive ion etching for advanced III−V n-fin field effect transistors (n-FinFETs) silicon. First, different chlorine chemistries have been investigated and compared in order to select most adequate one FinFETs process. Following this analysis, BCl3/SiCl4/Ar mixture was selected remaining work. Thus, a systematic study process based chemistry has carried out, effects experimental conditions...