A5066419244- Semiconductor Quantum Structures and Devices
- Laser Design and Applications
- Semiconductor Lasers and Optical Devices
- Advanced Semiconductor Detectors and Materials
- Magnetic confinement fusion research
- Solid State Laser Technologies
- Fusion materials and technologies
- Optical properties and cooling technologies in crystalline materials
- Laser-Plasma Interactions and Diagnostics
- Spectroscopy and Laser Applications
- Laser Material Processing Techniques
- GaN-based semiconductor devices and materials
- Particle accelerators and beam dynamics
- Laser-induced spectroscopy and plasma
- Thermal Radiation and Cooling Technologies
- Optical Wireless Communication Technologies
- Superconducting Materials and Applications
- Advanced Optical Sensing Technologies
- Ocular and Laser Science Research
- Advanced Measurement and Metrology Techniques
- Adaptive optics and wavefront sensing
- Gyrotron and Vacuum Electronics Research
- Energy Harvesting in Wireless Networks
- Advanced Fiber Laser Technologies
- Optical measurement and interference techniques
Auburn University
2024
Princeton Plasma Physics Laboratory
2024
RCA (United States)
1964-1971
The external efficiency of the incoherent radiation in GaAs diodes is decreased typically by a factor 10 as temperature increases 77°-to-300°K range. This paper shows that this decrease may be attributed to increased absorption at 300°K. internal quantum remains constant over
When pulse operated, all injection lasers show a laser line shift which is linear with time during the length. This evident for time-resolved spectra obtained by scanning technique. The data present pulse-operated gallium arsenide diodes. At high peak current values, joule heating results and are seen to longer wavelengths. A line-shift coefficient defined units angstroms per (ampere) <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>...
This work reports on recent results the search for high performance plasma scenarios at magnetically confined stellarator fusion device Wendelstein 7-X. In four new designed scenarios, development from transient toward stationary plasmas of improved has been realized. particular, a duration up to 5 s, an energy confinement time 0.3 diamagnetic 1.1 MJ, central ion temperature 2.2 keV, and triple product 3.4×1019m−3· keV · s have achieved, previously observed limitations machine overcome,...
The decrease of internal efficiency with increasing temperature in injection lasers has been assumed the past to be responsible for increase threshold and external efficiency. This attributed greater hole-electron smearing, a consequent reduction degree which inverted population occurs region stimulated emission takes place. paper shows that hole electron smearing at elevated temperatures negligible influence degenerate GaAs laser diodes contrast optical loss arising from <tex...
This paper presents an overview of recent hardware extensions and data analysis developments to the Wendelstein 7-X visible core spectroscopy systems. These include upgrades prepare in-vessel components for long-pulse operation, nine additional spectrometers, a new line sight array passive spectroscopy, coherence imaging charge exchange diagnostic. Progress in includes ion temperatures densities from multiple impurity species, statistical comparison with x-ray crystal spectrometer...
The temperature behavior of GaAs luminescent diodes varies widely. We show that the degradation incoherent radiation with increasing is not constant, slope a function temperature, and this functional dependence same for all classes diodes. For one extreme class ratio power output at 77°K to 300°K in 5:1 while other 100:1. In most cases rate neighborhood considerably greater than elevated temperatures. versus curve may be by order magnitude 300° K. range 150° K, more or less constant...
In the practical application of pulsed injection lasers it is necessary to distinguish between power and energy spectra. Most workers never or identify When terms are used, spectra have been used interchangeably with resultant confusion. Due closer spacing modes in gas insulator-type lasers, this distinction not nearly so important as for lasers.
Get PDF Email Share with Facebook Tweet This Post on reddit LinkedIn Add to CiteULike Mendeley BibSonomy Citation Copy Text T. Tsuruta, M. Kishi, and Gonda, "Three-Dimensional Positioning of a Slit Image," Appl. Opt. 10, 660-661 (1971) Export BibTex Endnote (RIS) HTML Plain alert Save article
A vertometer for spherical ophthalmic lenses was designed that is automated in focusing a target, centering lens being tested, and marking its center within specified limits of tolerances. Light from the target introduced into scanning unit detects three-dimensional deviation image desired position generates three signals to drive simultaneously so may come position. This procedure followed by an automatic measurement center, with accuracy some five times greater than attainable visual...
A very stable power supply for a photomultiplier is described that uses high frequency to transmit the error signal.
The fabrication and characteristics of high-power close-confinement GaAs laser diodes are described. Single-pellet devices emitting up to 100 watts peak power at 300°K multiple-pellet units 250 detailed. All were fabricated from GaAlAs-GaAs, heterostructure wafers that prepared by liquid phase epitaxy. parameters considered in the design these discussed detail test equipment measurement techniques used their characterization outlined. Test results showing lasing threshold current density,...
The performance characteristics of GaAlAs laser diodes which emit in the wavelength interval from 7500 Å to 8000 at 300°K will be discussed. Two basic devices are considered: Single-Pellet having emission widths ranging 3 16 mils and multiple-pellet stacked arrays. were fabricated heterojunction epitaxial layers grown on GaAs single crystal substrate by multiple liquid phase epitaxy. Data is presented showing wavelength, half-width, quantum efficiency, peak power output, lasing threshold...
The Large Optical Cavity (AlGa) As-GaAs heterojunction laser diode was recently described with the unique feature that p-type recombination region and n-type mode guiding were independently adjusted. A single fabrication technology can be used to prepare lasers designed for various applications ranging from CW high peak pulsed power operation by keeping thickness constant simply varying of region. LOC are capable efficient ambient temperatures in excess 100°C. Because their reduced...