A5089633185- Magnetic properties of thin films
- Magnetic and transport properties of perovskites and related materials
- ZnO doping and properties
- Heusler alloys: electronic and magnetic properties
- Transition Metal Oxide Nanomaterials
- Quantum Dots Synthesis And Properties
- Topological Materials and Phenomena
- Perovskite Materials and Applications
- Electronic and Structural Properties of Oxides
- Advanced Memory and Neural Computing
- Surface and Thin Film Phenomena
- Physics of Superconductivity and Magnetism
- Advanced Condensed Matter Physics
Ministry of Education of the People's Republic of China
2025
Xi'an Jiaotong University
2022-2025
Finding an effective way to greatly tune spin Hall angle in a low power manner is of fundamental importance for tunable and energy-efficient spintronic devices. Recently, topological insulator Bi2Se3, having large intrinsic angle, show great capability generate strong current-induced spin-orbit torques. Here we demonstrate that the Bi2Se3 can be effectively tuned asymmetrically even enhanced about 600% reversibly by applying bipolar electric field across piezoelectric substrate. We reveal...
Spin-orbit torque (SOT) efficiency is one of the key issues spintronics. However, enhancing SOT usually limited by positive correlation between resistivity and spin Hall ratio, where a high often accompanies large ratio. Here, we demonstrate that sub-nanometer β-W intercalation has considerable impact on in α-W (6 nm)/Co (8 nm)/Pt (3 nm) samples. The damping-like per unit current density, ξDLj, (5.7 nm)/β-W (0.3 shows ∼ 296% enhancement compared to α-W/Co/Pt system. Meanwhile, similar ratio...
Abstract Spintronic devices represent a promising advancement in information storage, sensors, RF/microwave tunable devices, and other applications. Recently, researchers have developed novel approach to energy‐efficiently manipulate spin states using photovoltaic (PV) thin‐film. However, optimization strategies for this method are relatively scarce. Here, PV/magnetic thin film heterojunction featuring perovskite quantum dots (PQDs) composite layer is presented with hybrid interfacial...
The realization of the all-electrical manipulation perpendicular magnetization switching is essential for next-generation information storage technologies and spintronic devices. Current-induced spin-orbit torque (SOT) has attracted tremendous research interest. However, this approach usually relies on external magnetic field to achieve deterministic switching, which greatly limits SOT devices moving toward practical applications. Here, we report measurement from [Pt/Au] multilayer with...
The manipulation of spin–orbit torque (SOT) manifests enormous potentiality in the field spintronics due to virtues low power consumption, ultrafast spin-flips, and high-density integration. Increaser spin hall angle source layer or SOT efficiency are key approaches achieving spintronics. Here, we report an enhancement torques Ta/Co/Pt heterostructures using low-voltage ionic liquid gating. effective Hall increased threefold with applied voltage 2 V. As expected, enhanced lowers critical...
Utilizing current-induced spin–orbit torque (SOT) to control magnetization is essential for the advancement of spintronics. SOT offers high energy efficiency and rapid operation speed. The ideal material should have a charge-to-spin conversion excellent electrical conductivity. Recently, there has been focus on topological insulator materials with surface states in research due their controllability coupling, conductivity, band topology. While Dirac semimetallic show promise applications,...