A5101843557- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Transition Metal Oxide Nanomaterials
- Semiconductor materials and devices
- Particle Detector Development and Performance
- Electronic and Structural Properties of Oxides
- Astrophysics and Cosmic Phenomena
- Neuroscience and Neural Engineering
- Dark Matter and Cosmic Phenomena
- Particle physics theoretical and experimental studies
- Neutrino Physics Research
- Cloud Computing and Resource Management
- Software System Performance and Reliability
- Advanced Data Processing Techniques
- Thin-Film Transistor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Radiation Effects in Electronics
- CCD and CMOS Imaging Sensors
- Radiation Detection and Scintillator Technologies
- Machine Learning and ELM
- Neural dynamics and brain function
- Opportunistic and Delay-Tolerant Networks
- Electrochemical Analysis and Applications
- Non-Destructive Testing Techniques
- Photovoltaic System Optimization Techniques
Applied Materials (United States)
2020-2025
University of Turin
2024
Istituto Nazionale di Fisica Nucleare, Sezione di Torino
2023
Istituto Nazionale di Fisica Nucleare, Sezione di Padova
2023
Istituto Nazionale di Fisica Nucleare, Roma Tor Vergata
2023
University of Padua
2023
Laboratoire de Physique Corpusculaire
2023
Centro Brasileiro de Pesquisas Físicas
2023
Max Planck Institute for Nuclear Physics
2023
Istituto Nazionale di Fisica Nucleare
2022
Resistive-switching memory (RRAM) based on transition metal oxides is a potential candidate for replacing Flash and dynamic random access in future generation nodes. Although very promising from the standpoints of scalability technology, RRAM still has severe drawbacks terms understanding modeling resistive-switching mechanism. This paper addresses resistive switching bipolar metal-oxide RRAMs. Reset set processes are described voltage-driven ion migration within conductive filament...
NiO films display unipolar resistance switching characteristics, due to the electrically induced formation and rupture of nanofilaments. While applicative interest for possible use in highly dense memory (RRAM) is extremely high, phenomena pose strong fundamental challenges understanding physical mechanisms models. This work addresses set reset nanofilaments RRAM devices. Reset described terms thermally-accelerated diffusion oxidation processes, its dependence explained by size-dependent...
Resistive-switching random access memory (RRAM) based on the formation and dissolution of a conductive filament (CF) through insulating materials, e.g., transition metal oxides, may find applications as novel logic devices. Understanding resistive-switching mechanism is essential for predicting controlling scaling reliability performances RRAM. This paper addresses set/reset characteristics RRAM devices <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Resistive-switching memory (RRAM) is attracting a considerable interest for the development of high-density nonvolatile memories. However, several scaling and reliability issues still affect path RRAM. This work addresses random telegraph-signal noise (RTN) RRAM current, potentially affecting stability. We show clear resistance dependence RTN amplitude, we propose physical model describing interaction localized current with fluctuating defect. By estimating diameter conductive filament,...
Set and reset characteristics are studied for unipolar bipolar metal-oxide resistive-switching memory devices. We show a universal dependence of set-state resistance current on the compliance used during set, with negligible impact composition switching condition. An analytical Joule-heating model is presented, predicting weak temperature voltage diffusion migration parameters in both unipolar- bipolar-switching modes. Data shown wide range metal oxides, support our calculations.
Understanding the physical mechanisms for resistance change in metal oxides is a key challenge to assess scalability of resistive-switching random access memory (RRAM) devices. From this standpoint, time dependence filament formation and dissolution can provide useful insight into fundamental mechanism resistive switching. In paper, we show an experimental study time-dependent growth voltage set/reset times HfO_x-based RRAM The across device shown be regulated at any given irrespective...
Resistive-switching random access memory (RRAM) devices utilizing a crossbar architecture represent promising alternative for Flash replacement in high-density data storage applications. However, RRAM arrays require the adoption of diodelike select with high on-off -current ratio and sufficient endurance. To avoid use devices, one should develop passive where nonlinear characteristic device itself provides self-selection during read write. This paper discusses complementary switching (CS)...
The full optimization of the design and operation instruments whose functioning relies on interaction radiation with matter is a super-human task, due to large dimensionality space possible choices for geometry, detection technology, materials, data-acquisition, information-extraction techniques, interdependence related parameters. On other hand, massive potential gains in performance over standard, "experience-driven" layouts are principle within our reach if an objective function fully...
NiO-based resistive-switching memory (RRAM) is a promising new technology for high-density nonvolatile storage. The main obstacles to practical application are the large and hardly scalable reset (programming) current reliability at high temperature. This letter studies temperature-accelerated data retention in RRAM cells from both experimental theoretical standpoints, addressing size/nature of conductive filament clarifying tradeoff between current.
Resistive-switching memory (RRAM) devices are attracting a considerable interest in view of their back-end integration, fast programming, and high scalability. Prediction the programming voltages currents as function operating conditions is an essential task for developing compact numerical models able to handle large number (10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> - 10 xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> )...
Metal oxides can display resistance transition by the application of suitable electrical pulses, and this behavior is exploited for development resistive-switching memory devices. Here we report time-resolved measurements demonstrating that from insulating to metallic-conductivity state in NiO first triggered a threshold switching, i.e., an electronic highly conductive typically observed disordered semiconductors. Evidence possibility subnanosecond transitions low shown. Numerical...
In a neural network, neuron computation is achieved through the summation of input signals fed by synaptic connections. The activity (weight) dictated synchronous firing neurons, inducing potentiation/depression connection. This learning function can be supported resistive switching memory (RRAM), which changes its resistance depending on amplitude, pulse width and bias polarity applied signal. work shows new synapse circuit comprising MOS transistor as selector RRAM variable resistance,...
Resistive-switching memory (RRAM) is an emerging nanoscale device based on the localized metal-insulator transition within a few-nanometer-sized metal oxide region. RRAM one of most promising technologies for ultimate downscaling nonvolatile memory. However, to develop arrays with densities approaching 1 Tb cm(-2) , bottom-up schemes synthesis and assembly nanowires (NWs) must be demonstrated. A core-shell Ni-NiO NWs presented, in which Ni core plays role metallic interconnect, while NiO...
Resistive switching memory (RRAM) based on the redox-induced conductivity change in some metal oxides attracts considerable interest as a new technology for next-generation nonvolatile electronic storage. Although resistance-switching phenomena several transition have been known from decades, details of mechanisms and nature different resistive states are still largely debated. For applications, scaling potential RRAMs is most relevant issue, understanding capability RRAM devices requires...
A major challenge in achieving high density crossbar arrays based on resistive-switching memory (RRAM) is the identification of a select device (e.g. diode) with suitable supply current and on-off swing. Recently, complementary resistance switch (CRS) concept 2-RRAM stack was proposed to solve sneak-path problem [1]. This work demonstrates switching (CS) single-stack nonpolar-RRAM devices. After describing CS characteristics by simulations, we show operation under DC/pulsed regime discuss...
Nanowires (NWs) represent a logical pathway to extreme scaling of semiconductor devices in the single-digit nanometer scale. Combined with inherent scalability resistive switching memory (RRAM), where region consists conductive filament as small single atom, NWs may provide an ideal approach reduce device area range not accessible conventional lithography. This work reviews NW-based RRAM (NWRRAM) devices. The different approaches NWRRAMs, including (i) metal–oxide NW, (ii) heterostructured...
This work addresses the set and reset mechanisms in NiO-based resistive-switching memory (RRAM) devices, presenting a new physics-based model for RRAM reliability programming. We show experimental evidence that process is initiated by threshold switching, reversible electronic transition to high conductance state. develop set/reset models prediction of programming voltage time under sweep or pulsed conditions. The speed limitations RRAMs are then assessed detailed study operation regime,...
Resistive switching in binary metal oxides consists of conductivity changes originating from the electrical creation/dissolution conductive filaments (CFs) at nanoscale. The investigation CF local properties can only be achieved through physical and studies scale 10 nm or less, that is, characteristic size CFs. This work reports on direct manipulation individual CFs formed insulating NiO films by atomic force microscopy (CAFM) comparison between forming/reset processes induced CAFM those...
Conductive-bridge random access memory (CBRAM) devices have shown low-power programming, fast switching, and good device scalability. In particular, the large resistance window control of conductive filament (CF) size may allow for efficient multilevel-cell (MLC) operation. Toward this aim, structural stability CF must be demonstrated. This letter addresses set states in CBRAM. We evidence a size-dependent drift resistance, which is interpreted by surface relaxation due to defect...
The resistive switching memory (RRAM) may offer a scalable solution for 3D high-density non-volatile storage. For physics-based prediction of RRAM scalability, however, accurate models must be developed. This work presents numerical model bipolar switching, capable describing set/reset processes and reliability issues, such as program/read disturbs retention. is based on field- temperature-activated ion migration accounts characteristics different compliance currents timescales (10 ns - 100...
Electrical conduction in ovonic threshold switching (OTS) devices is described by introducing a new physical model where the multiphonon trap-assisted tunneling (TAT) coupled to hydrodynamic theory. Static and transient electrical responses from GexSe <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}_{{1}-{x}}$ </tex-math></inline-formula> experimental are reproduced, outlining role played material...