A5076462729- Thermal properties of materials
- Silicon Carbide Semiconductor Technologies
- Composite Material Mechanics
- Electromagnetic Compatibility and Noise Suppression
- Dielectric materials and actuators
- Advanced DC-DC Converters
- Advanced Battery Technologies Research
- Non-Destructive Testing Techniques
- Membrane-based Ion Separation Techniques
- Thermal Radiation and Cooling Technologies
- Energy Harvesting in Wireless Networks
- Energy Load and Power Forecasting
- Ferroelectric and Piezoelectric Materials
- MXene and MAX Phase Materials
- HVDC Systems and Fault Protection
- Reliability and Maintenance Optimization
Hubei University
2024
Hefei University of Technology
2021-2023
Silicon Carbide (SiC) MOSFETs are usually paralleled to increase the current capability for high power applications. While, asymmetrical parasitic parameters of wide-used laminated busbar can cause imbalance MOSFETs. The fast switching SiC devices further deteriorate imbalance. However, complex paths and their mutual effects seldom considered effectively modeled parasitics busbar, which is not accurate enough evaluate connected with devices. This paper proposes modeling effective parameter...
Power switching devices are key components of power conversion systems. Their lifetime assessment is critical to the system's safe operation. This study proposes a method for estimating remaining useful life (RUL) based on fusion multiple monitoring indicators address problems low prediction accuracy, utilization indicators, and partial failure information existing models. First, devices' quantities various electro-thermal parameters were obtained through accelerated aging tests. Second,...
Discrete Silicon Carbide (SiC) MOSFETs are usually used in parallel to enhance the current capability for medium and high-power application. However, rough design of busbar structure may lead an asymmetric parasitic inductance branches., which can further cause imbalance. Thus, a symmetrical is critical application discrete SiC MOSFETs. While, mutual coupling between branches, with increase devices very complicated network. It not convenient prediction balance estimating symmetry busbar....
With the rapid development of power devices, problem thermal reliability devices becomes more and prominent, so how to accurately obtain resistance is particularly critical. The traditional structure function method most effective analyze characteristics semiconductor at present, but existing deconvolution algorithm has some problems, such as noise, uncertain number iterations long time. This paper presents a new based on ANN. Build model through ANN, sample set measured by Thermal tester...