A5102240315- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Silicon and Solar Cell Technologies
- ZnO doping and properties
- Silicon Carbide Semiconductor Technologies
- Diamond and Carbon-based Materials Research
- TiO2 Photocatalysis and Solar Cells
- Quantum Dots Synthesis And Properties
- Gas Sensing Nanomaterials and Sensors
- Fluid Dynamics and Thin Films
- Chalcogenide Semiconductor Thin Films
- Copper-based nanomaterials and applications
- Advanced Nanomaterials in Catalysis
- Advanced Semiconductor Detectors and Materials
- Nanomaterials and Printing Technologies
- Semiconductor materials and interfaces
- Organic Electronics and Photovoltaics
- Supercapacitor Materials and Fabrication
- Advancements in Battery Materials
- Surface Roughness and Optical Measurements
- Advanced battery technologies research
- Advanced Photocatalysis Techniques
- Nanowire Synthesis and Applications
- Advanced Surface Polishing Techniques
G.S. Science, Arts And Commerce College
2015-2024
Savitribai Phule Pune University
2011-2015
Structural, optical, and electrical properties of hydrogenated silicon carbide (SiC:H) films, deposited from silane (SiH 4 ) methane (CH gas mixture by HW-CVD method, were investigated. Film are carefully systematically studied as function deposition pressure which is varied between 200 mTorr 500 mTorr. The rate found to be reasonably high (9.4 nm/s <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Hydrogenated nanocrystalline silicon films were prepared by hot-wire method at low substrate temperature (200 ∘ C) without hydrogen dilution of silane (SiH 4 ). A variety techniques, including Raman spectroscopy, angle X-ray diffraction (XRD), Fourier transform infrared (FTIR) atomic force microscopy (AFM), and UV-visible (UV-Vis) used to characterize these for structural optical properties. Films are grown reasonably high deposition rates (>15 Å/s), which very much appreciated the...
In this paper, we explain why specific mixed solvent composition leads to appropriate film formation of composite (polymer: inorganic nanoparticle) during spin coating. As a typical case, P3HT:TiO2 has been discussed by taking chloroform as good for P3HT while ethanol, methanol, and 2-propanol are used co-solvents dispersing TiO2. Mixed evaporation dynamics drying simulated the experimental results. Present study can be immensely useful selecting proper solvents their initial ratio blend...
Phosphorous doped hydrogenated nanocrystalline silicon (nc-Si:H) films were prepared using the hot wire chemical vapor deposition (HW-CVD) method at a low substrate temperature of 200 °C. The microstructure and opto-electrical properties these systematically studied Raman spectroscopy, angle XRD, high resolution transmission electron microscopy (HR-TEM), UV-Visible Fourier transform infrared (FTIR) dark conductivity its activation energy measurements Hall measurement as function PH3...
We demonstrate the use of controlling ambient during spin coating to finely control solvent evaporation rate in order obtain varying degree phase separation P3HT:PCBM blend films and study effect on device performance. To understand basic phenomenon driving separation, modelling has been performed, which show that is due PCBM diffusion towards nucleation site once its solubility limit crossed process.
CdS thin films of varying thickness were deposited on the glass substrate by chemical bath deposition (CBD) using Cadmium Chloride (CdCl2) and Thiourea ((NH2)2CS) as Cd S sources respectively with ammonia a complexing agent. The synthesized have been characterized X-ray diffractometer (XRD), Raman spectroscopy, UV-Vis-NIR spectrophotometer, Scanning electron microscopy (SEM), Transmission (TEM) Energy dispersion analysis (EDAX). From XRD it is inferred that obtained highly orientated...
In this paper, we report the synthesis of highly conducting phosphorous doped hydrogenated nanocrystalline silicon (nc-Si:H) films at substantially low substrate temperature (200 degrees C) by hot-wire chemical vapor deposition (HW-CVD) method using pure silane (SiH4) and phosphine (PH3) gas mixture without hydrogen dilution. Structural, optical electrical properties these were investigated as a function PH3 gas-phase ratio. The characterization low-angle X-ray diffraction, Raman...
Nickel sulfide (NiS) nanostructures were synthesized by simple and low-cost hot injection method (HIM).The effects of sulfur concentration on the compositional, morphological, optical structural properties NiS nanoparticles investigated in detail.The X-ray diffraction pattern confirms formation without any impurities.The Raman spectra show presence active modes material prepared at different sulphur concentration.The electrochemical performance powder was estimated through cyclic...
We investigated the effect of Xe dilution silane on structural, optical and electrical properties nanocrystalline Si films deposited by HW-CVD. With increase in nanocrystalline-to-amorphous transition or amorphization has been observed films. The confirmed from dark photoconductivity measurement, Raman spectroscopy, low angle XRD atomic force microscopy analysis. FTIR spectroscopy analysis showed that with silane, addition to di-hydrogen [Si-H2] poly-hydrogen [(Si-H2)n] complexes, hydrogen...
In the present study, nc-Si:H thin films have been deposited from rf-PE-CVD method. A set of depositions was achieved by varying deposition pressure 234 mTorr to 1 Torr, while all other parameters were kept constant. Structural, optical and electrical properties investigated in detail. Deposition is found be a crucial parameter fine-tuning material including relative fraction amorphous crystalline phases. Results indicate that film growth rate critically depends on plasma chemistry/gas phase...
Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation M. R. Pramod, Kamble, V. S. Waman, A. Funde, G. Sathe, W. Gosavi, Jadkar; Boron Doped p‐type Hydrogenated Nanocrystalline Silicon Films Grown by Hot Wire Chemical Vapor Deposition. AIP Conference Proceedings 20 October 2011; 1391 (1): 517–519. https://doi.org/10.1063/1.3643596 Download citation file: Ris...
Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation V. S. Waman, M. Kamble, R. Pramod, A. Funde, G. Sathe, W. Gosavi, Jadkar; Structural optical investigations of nc‐Si:H thin films prepared by hot‐wire method. AIP Conf. Proc. 20 October 2011; 1391 (1): 155–157. https://doi.org/10.1063/1.3646809 Download citation file: Ris (Zotero) Reference Manager EasyBib...
Hydrogenated nanocrystalline silicon carbide (nc-SiC:H) films were prepared by hot wire chemical vapor deposition (HW-CVD) method using ethane (C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> H xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> ) as a carbon precursor. The influence of pressure on structural and optical properties was investigated. formation nc-SiC:H confirmed low angle x-ray diffraction (XRD), Raman spectroscopy...
One dimensional rutile-TiO 2 nanoneedles (NNs) and nanorods (NRs) were grown directly on transparent conductive Fluorine-doped SnO -coated (FTO) glass substrates using Chemical Bath Deposition (CBD) method. Titanium (III) chloride was used as the precursor, followed by annealing at 200°C. The heat treatment leads to conversion of TiO into nanorods. Optical studies revealed that thin films have a high absorption coefficient direct bandgap which decreased slightly (3.14-3.09 eV) applying .The...
In present report, p-type CdTe semiconductor thin films were grown directly on transparent conductive Fluorine-doped SnO2-coated (FTO) glass substrates using three-electrode electrodeposition technique. The whole work carried out at ambient condition. Structural studies reveal that are possessing cubic zinc blend crystal structure. growth mechanism of nanostructures is revealed by investigating the cyclic voltammetry analysis. Morphological characterization demonstrates high-purity, uniform...
In this work we report synthesis and characterization of nc‐Si:H films by HW‐CVD method. The role filament temperature (Tfil) in controlling the material properties has been carefully systematically investigated. Characterization these with Raman spectroscopy XRD revealed that increase Tfil endorses growth crystallinity films. Furthermore, crystallites have preferential orientation (111) direction. hydrogen content shows decreasing trend but it remains <6 at. % over entire range studied....