Y. H. Zhang

ORCID: 0009-0003-2605-6416
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About
Contact & Profiles
Research Areas
  • Semiconductor Quantum Structures and Devices
  • Fuel Cells and Related Materials
  • Advancements in Semiconductor Devices and Circuit Design
  • Advanced Semiconductor Detectors and Materials
  • Electrocatalysts for Energy Conversion
  • Semiconductor materials and devices
  • Advanced battery technologies research
  • 2D Materials and Applications
  • Graphene research and applications
  • Topological Materials and Phenomena
  • Chalcogenide Semiconductor Thin Films
  • MXene and MAX Phase Materials
  • Quantum Dots Synthesis And Properties
  • solar cell performance optimization

Arizona State University
1999-2013

European Council for an Energy Efficient Economy
2001

Significant performance enhancement in nanofiber-based PEMFCs featuring highly O 2 permeable ionomer films, proton-conductive fibers, and increased active sites.

10.1039/d3ta06453k article EN Journal of Materials Chemistry A 2024-01-01

Misfit dislocations were used to modify the surface morphology and attain spatial ordering of quantum dots (QDs) by molecular beam epitaxy. Effects anneal time temperature on strain-relaxed InxGa1−xAs/GaAs layers subsequent InAs QDs investigated. Photoluminescence (PL) time-resolved PL was study effects increased QD positional ordering, uniformity, their proximity dislocation arrays optical properties. Narrower inhomogeneous broadening from ordered observed, differences in dynamics found.

10.1063/1.1467963 article EN Journal of Applied Physics 2002-04-17

Deep-level transient spectroscopy measurements in InAs quantum dots (QDs) grown both n-GaAs and p-GaAs show that tunneling is an important mechanism of carrier escape from the dots. The doping level barrier strongly affects emission rates, enabling or preventing detection a capacitance signal given QD level. relative intensity this acquired with different rate windows allows estimation energies.

10.1063/1.1402642 article EN Applied Physics Letters 2001-09-24

Spectroscopic ellipsometry (SE) and diffuse reflection spectroscopy (DRS) are used to control the Ga mole fraction substrate temperature, respectively, during growth of InGaAs lattice matched InP. is controlled within ±0.002 its target value temperature ±2 °C value. The same under constant thermocouple would result in a 50 rise real composition 1% above In both cases, feedback achieved using nested proportional-integral-derivative (PID) loop, where, inner loop consists conventional...

10.1116/1.590729 article EN Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena 1999-05-01

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – 5, 2010.

10.1017/s1431927610062811 article EN Microscopy and Microanalysis 2010-07-01
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