A5073694485- Photonic and Optical Devices
- Advanced Photonic Communication Systems
- Optical Network Technologies
- Plasmonic and Surface Plasmon Research
- Terahertz technology and applications
- Photonic Crystals and Applications
- Advanced Fiber Laser Technologies
- Millimeter-Wave Propagation and Modeling
- Radio Frequency Integrated Circuit Design
- Laser-Matter Interactions and Applications
- Molecular Communication and Nanonetworks
- Semiconductor Lasers and Optical Devices
- Optical Wireless Communication Technologies
- Microwave Engineering and Waveguides
- Digital Marketing and Social Media
- Optical Coatings and Gratings
- Spectroscopy and Laser Applications
- Quantum optics and atomic interactions
Karlsruhe Institute of Technology
2013-2023
Max Planck Institute of Quantum Optics
2016
Silicon photonics offers tremendous potential for inexpensive high-yield photonic-electronic integration. Besides conventional dielectric waveguides, plasmonic structures can also be efficiently realized on the silicon photonic platform, reducing device footprint by more than an order of magnitude. However, neither nor metals exhibit appreciable second-order optical nonlinearities, thereby making efficient electro-optic modulators challenging to realize. These deficiencies overcome concepts...
By coupling light to the charges at metal interfaces, plasmonics enables scientists manipulate photons in a way they never have before: subwavelength level. With its potential produce ultra-compact devices that relay information almost instantaneously, may be next big-and small-thing optical communications.
Silicon-plasmonics enables the fabrication of active photonic circuits in CMOS technology with unprecedented operation speed and integration density. Regarding applications chip-level optical interconnects, fast efficient plasmonic photodetectors ultrasmall footprints are special interest. A particularly promising approach to silicon-plasmonic photodetection is based on internal photoemission (IPE), which exploits intrinsic absorption waveguides at metal–dielectric interface. However, while...
Nonlinear interactions between ultrashort optical waveforms and solids can be used to induce steer electric currents on femtosecond (fs) timescales, holding promise for electronic signal processing at PHz (10 15 Hz) frequencies [Nature 493, 70 (2013)].So far, this approach has been limited insulators, requiring extreme peak fields (>1 V∕Å) intensities (>10 13 W∕cm 2 ).Here, we show all-optical generation control of in a semiconductor relevant high-speed high-power (opto)electronics, gallium...
We report on high-speed plasmonic-organic hybrid Mach-Zehnder modulators comprising ultra-compact phase shifters with lengths as small 19 µm. Choosing an optimum shifter length of 29 µm, we demonstrate 40 Gbit/s on-off keying (OOK) modulation direct detection and a BER < 6 × 10(-4). Furthermore, µm long binary-phase shift (BPSK) modulator show that it operates error-free (BER 1 10(-10)) at data rates up to energy consumption 70 fJ/bit.
Photonics might play a key role in future wireless communication systems that operate at THz carrier frequencies.A prime example is the generation of data streams by mixing optical signals high-speed photodetectors.Over previous years, this concept has enabled series transmission experiments record-high rates.Reception these experiments, however, still relied on electronic circuits.In paper, we show receivers can also greatly benefit from optoelectronic signal processing techniques,...
Silicon-organic hybrid (SOH) and plasmonic-organic (POH) integration combines organic electro-optic materials with silicon photonic plasmonic waveguides. The concept enables fast power-efficient modulators that support advanced modulation formats such as QPSK 16QAM.
We demonstrate the first silicon-plasmonic photomixer. THz radiation is generated and received by employing two lasers near 1.5 µm. The receiver sensitivity of 28 mA/(W V) compares well with a commercial system.
Get PDF Email Share with Facebook Tweet This Post on reddit LinkedIn Add to CiteULike Mendeley BibSonomy Citation Copy Text S. Ummethala, T. Harter, K. Köhnle, Muehlbrandt, Y. Kutuvantavida, J. N. Kemal, Schaefer, H. Massler, A. Tessmann, Garlapati, Bacher, L. Hahn, M. Walther, Zwick, Randel, W. Freude, and C. Koos, "Terahertz-to-Optical Conversion Using a Plasmonic Modulator," in Conference Lasers Electro-Optics, OSA Technical Digest (online) (Optica Publishing Group, 2018), paper STu3D.4....
We show coherent wireless transmission at carrier frequencies of 0.25 THz and 0.35 THz, relying exclusively on optoelectronic concepts for RF signal generation reception. In a proof-of-concept experiment, we demonstrate BPSK symbol rate 1 GBd.
We show coherent wireless transmission at carrier frequencies within 0.30+0.02 THz using up to 20 QPSK-modulated subcarriers with a symbol rate of 0.75 GBd each, leading an aggregate line 30 Gbit/s. exploit optoelectronic techniques, both for generation and reception.
We report a THz wireless link at 0.2885 which is embedded in photonic network. An ultra-broadBand plasmonic modulator directly converts the signal to optical domain. transmit QPSK data with line rates up 50 Gbit/s.
In this paper, the chip-to-chip interconnection architecture adopted by EU-project NAVOLCHI are discussed. The plasmonic physical layer consisting of a nanoscale laser, modulator, an amplifier and detector is introduced. Current statuses devices reviewed.
We demonstrate first plasmonic photodetectors based on internal photoemission featuring responsivities exceeding 0.12 A/W at 1550 nm. The devices consist of ultra-compact waveguides with electrode spacing below 100 nm receiving on-off-keying signals 40 Gbit s-1.
Summary form only given. Silicon photonics offers tremendous potential for inexpensive high-yield photonic-electronic integration by enabling fabless fabrication and joint processing of photonic electronic circuitry. Besides conventional dielectric waveguides, plasmonic structures can also be efficiently realized on the silicon platform, thereby reducing device footprint more than an order magnitude. metals, however, fall short certain optical properties that are indispensable...
We report on plasmonic-organic hybrid(POH) phase modulator generating error free (BER<10−10) BPSK signals at 40Gbit/s. In addition, generation and direct detection of 40Gbit/s OOK are discussed using POH Mach-Zehnder modulators the transmitter side.
Get PDF Email Share with Facebook Tweet This Post on reddit LinkedIn Add to CiteULike Mendeley BibSonomy Citation Copy Text A. Melikyan, L. Alloatti, Muslija, D. Hillerkuss, P. C. Schindler, J. Li, R. Palmer, Korn, S. Muehlbrandt, Van Thourhout, B. Chen, Dinu, M. Sommer, Koos, Kohl, W. Freude, and Leuthold, "Surface Plasmon Polariton High-Speed Modulator," in CLEO: 2013 Postdeadline, OSA Postdeadline Paper Digest (online) (Optica Publishing Group, 2013), paper CTh5D.2. Export BibTex Endnote...
Nanophotonic modulators and photodetectors are key building blocks for high-speed optical interconnects in datacom telecom networks. Besides power efficiency high electro-optic bandwidth, ultra-compact footprint scalable co-integration with electronic circuitry indispensable highly communication systems. In this paper, we give an overview on our recent progress exploring nanophotonic that combine the specific strengths of silicon photonic plasmonic device concepts hybrid integration...
Plasmonic modulators integrated with silicon photonic circuits are discussed. First, a 29 μm long phase modulator operating at 40Gbit/s is demonstrated. Then, an absorption presented exploiting the plasma effect in metal oxide layers.
Driven by optical communications, a powerful toolbox for photonic integration has emerged over the last years. We review specific opportunities that can be unlocked applying these technologies to field of metrology and sensing.
Silicon-plasmonic photodetection based on internal photoemission exploits the intrinsic absorption in plasmonic waveguides at metal-dielectric interfaces. For this purpose we designed an asymmetric metal-semiconductor-metal waveguide with a width of 75 nm. Our detector (PIPED) shows rec-ord-high photocurrent sensitivity up to S = 0.12 A / W for light wavelength 1550 The opto-electronic bandwidth is extremely large and allows data reception rates least 40 Gbit/s. As another appli-cation,...