A5031043066- Quantum and electron transport phenomena
- Magnetic properties of thin films
- Semiconductor Quantum Structures and Devices
- 2D Materials and Applications
- Semiconductor materials and devices
- MXene and MAX Phase Materials
- Graphene research and applications
- Physics of Superconductivity and Magnetism
- Advanced Memory and Neural Computing
- Organic and Molecular Conductors Research
Huazhong University of Science and Technology
2023-2024
Guilin University of Technology
2019-2021
The ferroelectric barrier MnSe-based MFTJs based on the ferromagnetic electrodes Fe 3 GeTe 2 exhibit four nonvolatile resistance states and can realize coexistence of tunneling magnetoresistance (TMR) electroresistance (TER).
Achieving low-resistance Ohmic contacts with a vanishing Schottky barrier is crucial for enhancing the performance of two-dimensional (2D) field-effect transistors (FETs). In this paper, we present theoretical investigation VS2/WSe2-vdWHs-FETs gate length (Lg) in range 1–5 nm, using ab initio quantum transport simulations. The results show that very low hole height (−0.01 eV) can be achieved perfect band offsets and reduced metal-induced gap states (MIGS), indicating formation p-type...
The control of spin transport is a fundamental but crucial task in spintronics and realization high polarization pure currents particularly desired. By combining the non-equilibrium Green's function with first principles calculations, it shown that halogen adsorption can transform black phosphorene monolayer from nonmagnetic semiconductor to magnetic two almost symmetric spin-split states near Fermi level, which provides isolated channels. Further investigations demonstrate device based on...
Wave vector filtering effect is explored for electrons in magnetically and electrically confined semiconductor heterostructure, which can be realized experimentally by depositing a ferromagnetic stripe Schottky metal parallel configuration on the surface of [Formula: see text] heterostructure. Adopting improved transfer matrix method to solve Schrödinger equation, electronic transmission coefficient calculated exactly, then wave efficiency obtained differentiating probability over...
The use of two-dimensional semiconductor materials as channel for field-effect transistors (FETs) is great interest since it can lower the gate length FETs to less than 10 nm without noticeably impairing device's performance.
We apply a bias to magnetoresistance (MR) device, which is constructed on surface of GaAs/Al x Ga 1– As heterostructure by patterning two asymmetric ferromagnetic stripes. Using improved transfer matrix method and Landauer–Büttiker theory, bias-dependent transmission, conductance ratio are calculated numerically. An obvious MR effect appears, because significant difference transmission or between parallel (P) antiparallel (AP) magnetization configurations. can be tuned adjusting magnitude...