A5074567844- Quantum and electron transport phenomena
- Semiconductor Quantum Structures and Devices
- Advancements in Semiconductor Devices and Circuit Design
- Molecular Junctions and Nanostructures
- Surface and Thin Film Phenomena
- Advanced Memory and Neural Computing
- Quantum Information and Cryptography
- Semiconductor materials and interfaces
- Cold Atom Physics and Bose-Einstein Condensates
- Ferroelectric and Negative Capacitance Devices
- ZnO doping and properties
- Nonlinear Optical Materials Studies
- Mechanical and Optical Resonators
- Advanced Thermodynamics and Statistical Mechanics
- Fullerene Chemistry and Applications
- Quantum chaos and dynamical systems
- Gyrotron and Vacuum Electronics Research
- Quantum-Dot Cellular Automata
- Semiconductor materials and devices
- Diamond and Carbon-based Materials Research
- CCD and CMOS Imaging Sensors
- Transition Metal Oxide Nanomaterials
National Pingtung University
2024
University of Cincinnati
2009-2012
National Chung Cheng University
2010
We have measured the magnetic splitting ${\ensuremath{\Delta}}_{K}$ of a Kondo peak in differential conductance single-electron transistor while tuning temperature ${T}_{K}$ along two different paths parameter space: varying dot-lead coupling at constant dot energy and vice versa. At high field $B$, changes with opposite signs, indicating that is not universal function ${T}_{K}$. low we observe decrease both paths, agreement theoretical predictions. Furthermore, find...
This study examines resistive switching in a Cu/ZnO/ITO structure, uncovering an anomalous phenomenon that provides insights into the mechanisms of parallel conducting filaments ZnO thin films. The current–voltage (I–V) characteristics exhibit sharp switch at positive threshold voltage around 2 V, transitioning from high resistance pristine state to low state, interpreted as formation Cu filament via electrochemical metallization. However, after this forming process, device remains and...
Using the Z-scan technique with 532 nm 16 picosecond laser pulses, we observe reverse saturable absorption and positive nonlinear refraction of toluene solutions both C(60) C(70). By deducting Kerr solvent, notice that solute molecules contribute to opposite signs: for negative Attributing solutes cascading one-photon excitations, illustrate they satisfy Kramers-Kronig relation. Accordingly, attest signs magnitudes at by transform corresponding spectra.
In this paper, we investigate the resistive switching (RS) behavior of Cu/ZnO/ITO devices subjected to various rapid thermal annealing (RTA) temperatures under vacuum. Current–voltage characteristics reveal that following application a positive electroforming voltage, both unannealed ZnO films and those annealed at 200 °C exhibit bipolar RS, consistent with electrochemical metallization mechanism (ECM). However, higher RS negative threshold voltages coexistence in polarities. Ultimately,...
We report a zero-bias peak (ZBP) in the differential conductance of quantum point contact (QPC), which splits an external magnetic field. The is observed over range device values starting significantly below $2{e}^{2}/h$. splitting closely matches Zeeman energy and shows very little dependence on gate voltage, suggesting that mechanism responsible for formation involves electron spin. Precision data experiment are obtained from separately patterned single-electron transistor located short...
We report detailed transport measurements in a quantum dot spin-flip co-tunneling regime, and quantitative comparison of the data to microscopic theory. The is fabricated by lateral gating GaAs/AlGaAs heterostructure, conductance measured presence an in-plane Zeeman field. focus on ratio nonlinear values at bias voltages exceeding threshold, regime that permits spin flip dot, those below when energetically forbidden. obtained three different odd-occupation states show good agreement with...