Solar evaporation offers a promising approach to drive the distillation process, and nanotechnology may help overcome operational issues such as salt fouling. Here, we discuss opportunities presented by salt-rejecting solar enhance sustainability of desalination. Within this framework, phase diagrams crystallization physics are first revisited understand transitions water well formation growth crystals. We then examine salting-out salt-free evaporating systems toward better The techniques be...

Abstract A modified confined catalyst with CeO 2 on the interior and CuO exterior surface of TiO nanotubes (Ce-in-TNT-Cu-out) was prepared investigated for combustion butane catalytically. Compared Ce-in-TNT TNT-Cu-out, Ce-in-TNT-Cu-out presents a higher activity oxidation, conversion 10% at 200°C 90%) 300°C. XPS analysis indicates that more Ce(IV) Cu(I) components exist in catalyst. It is proposed electron transfer ability between encapsulated loaded significantly enhanced by confinement...

Solar water evaporation offers a promising route to enable large-scale conversion and storage of solar energy.Utilizing nanofluid with superior photothermal properties in energy systems is an effective method improve their thermal performance.However, the bulk temperature increase fluid will induce loss, which reduces phase-change at air-water interface.Here, we demonstrate plasmon-assisted bubble column evaporator that functionally deconvolutes its light absorption scattering centers for...

Particle separation from fluid interfaces is one of the major challenges due to large capillary energy associated with particle adsorption. Previous approaches rely on physicochemical modification or tuning electrostatic action. Here, we show experimentally that can be achieved by fast dynamics drop impact soap films. When a droplet wrapped particles (liquid marble) collides film, it undergoes bouncing and coalescence, stripping viscous separation, tunneling through film. Despite violence...

A high temperature operation mid-wavelength 128×128 infrared focal plane arrays (FPA) based on low Al component In_1-xAl_xSb was presented in this work. InAlSb materials were grown InSb (100) substrates using MBE technology, which confirmed by XRD and AFM analyses. We have designed two structures with without barrier. The pixel of the detector had a conventional PIN structure size 50μmx50μm. device fabrication process consisted mesa etching, passivation,...

With the rapid development of economy and society, demand for power supply is getting higher higher, substation becomes particularly important as key node energy conversion transmission. Further improve quality progress construction, promote intelligent construction. The cabin an innovative form that comes into being in context modern needs, which can meet specific while also having strong reliability flexibility. This paper introduces basic concept, structure, engineering technical...

Infrared(IR)photo detectors based on InAs/GaSb type II superlattice have developed quickly in recent years. Many groups show great interest detector for its superiors as high quantum efficient, working temperature, uniformity and low dark current densities. Inductively coupled plasma(ICP) etching of GaSb InAs/ superlattices were performed using Cl₂/Ar/CH₄/H₂. This paper introduceste inductively plasma( ICP) Inas/GaSb with SiO₂ mask by the...

We have measured room temperature x-ray absorption spectroscopy (XAS) at the Mn L_2,3edges on ferromagnetic Ga_1-xMn_xAs films prepared under different As₂/Ga flux ratios. A growth condition relative energy shift (ΔE) L₂ peak was observed, results suggest that formation of antiferromagnetic Mn-As complex As-rich conditions and can be weakened even eliminated by post-growth low (LT) annealing. The intensity XAS spectrum promoted after...

The InSb epitaxial layer of p⁺-n-n⁺ structure was grown by Molecular Beam Epitaxy (MBE) on a heavily doped substrate. Photodiodes were fabricated standard semiconductor manufacturing process. Measurement and analysis its electrical properties carried out. Compared with traditional bulk crystal p⁺-n structure, we find that, when the external bias voltage is 0.1V, dark current density values device material 1.1×10^-6 A·cm^-2...

One of the major challenges InAs/GaSb superlattice devices arises owing to large number surface states generated during fabrication processes. Surface passivation and subsequent capping surfaces are essential for any practical applicability this material system. In paper, we passivated infrared detectors proposed anodic fluoride method. Short mid wavelength materials were grown by Molecular Beam Epitaxy (MBE) on GaSb (100) substrates. A buffer layer was optimized growth condition, which can...

With the development of technology, demand for semiconductor ultraviolet detector is increasing day by day. Compared with traditional infrared in missile guidance, ultraviolet/infrared dual-color detection can significantly improve anti-interference ability missile. According to need guidance and other areas application detector, paper introduces a manufacture CdS Schottky barrier detector. By using radio frequency magnetron sputtering Pt thin film layer sputtered on basement form contact...

Inductively coupled plasma (ICP) etching of GaSb and InAs/GaSb super lattices were performed using Cl₂/Ar plasma. The effects time, Cl₂: Ar ratio RF power on rates investigated. It is found that the relatively low when etch time was less than 2 min, After for 3 about 1.3 μm/min as a result constant, also, rate increased monotonically with increasing Cl₂ proportion, reaches at 4.14 concentration 80%. In contrast, peak value 1.37 increase extent much lower...

In this work, Be ions were used for p-type doping by implantation because of its light mass and consequently lower damage introduction rate. Photodiode properties implanted InSb with both conventional annealing rapid thermal also presented. The p-on-n structure samples fabricated bombarding the doses 2×10¹⁴ cm^-2 5×10¹⁴ at room temperature. implanting energy was chosen 100KeV, 120KeV 140KeV, respectively. Then SIMS measurements taken to confirm...

Herein, we report a novel approach to passivation of InAs/GaSb superlattice for mid-short wavelength dual-color infrared detector. One the major challenges faced by devices arises owing large number surface states that are generated. Surface and subsequent capping surfaces absolutely essential any practical applicability this material system. As evidenced comparison unpassivated passivated InAs/ GaSb photodiodes. The methods include zinc sulfide (ZnS) coating after anodic oxide, ZnS fluoride...