A5035228747- Advancements in Semiconductor Devices and Circuit Design
- Quantum and electron transport phenomena
- Semiconductor Quantum Structures and Devices
- Quantum Dots Synthesis And Properties
- Near-Field Optical Microscopy
- Semiconductor materials and devices
- Quantum Computing Algorithms and Architecture
- Acoustic Wave Resonator Technologies
- Quantum Mechanics and Applications
- GaN-based semiconductor devices and materials
- Quantum optics and atomic interactions
- Quantum Information and Cryptography
University of Basel
2020-2024
Abstract The potential of Si and SiGe-based devices for the scaling quantum circuits is tainted by device variability. Each needs to be tuned operation conditions each realisation requires a different tuning protocol. We demonstrate that it possible automate 4-gate FinFET, 5-gate GeSi nanowire 7-gate Ge/SiGe heterostructure double dot from scratch with same algorithm. achieve times 30, 10, 92 min, respectively. algorithm also provides insight into parameter space landscape these devices,...
Spanning over two decades, the study of qubits in semiconductors for quantum computing has yielded significant breakthroughs. However, development large-scale semiconductor circuits is still limited by challenges efficiently tuning and operating these circuits. Identifying optimal conditions complex, involving exploration vast parameter spaces. This presents a real 'needle haystack' problem, which, until now, resisted complete automation due to device variability fabrication imperfections....
Radio-frequency reflectometry techniques enable high-bandwidth readout of semiconductor quantum dots. Careful impedance matching the resonant circuit is required to achieve high sensitivity, which, however, proves challenging at cryogenic temperatures. Gallium arsenide--based voltage-tunable capacitors, so-called varactor diodes, can be used for in situ tuning but deteriorate and fail temperatures below 10 K magnetic fields. Here, we investigate a based on strontium titanate with hyperabrupt...
To overcome the threshold for fault-tolerant quantum computation, qubits have to be protected from their noisy environment attain necessary high fidelities. Recent experiments discovered sweet spots with strongly enhanced coherence. However, decoupling a qubit its surroundings also limits control over qubit's state, typically leading either coherent but slow or fast short-lived qubits. This trade-off appears severe fundamental limitation hampering performance of Here, we show how this can...
We experimentally determine isotropic and anisotropic $g$-factor corrections in lateral GaAs single-electron quantum dots. extract the Zeeman splitting by measuring tunnel rates into individual spin states of an empty dot for in-plane magnetic field with various strengths directions. quantify energy find a linear dependence on strength that allows us to $g$ factor. The measured factor is understood terms spin-orbit interaction induced bulk Experimental detection identification minute...
The potential of Si and SiGe-based devices for the scaling quantum circuits is tainted by device variability. Each needs to be tuned operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, capable tuning 4-gate FinFET, 5-gate GeSi nanowire 7-gate SiGe heterostructure double dot from scratch. achieve times 30, 10, 92 minutes, respectively. also provides insight into parameter space landscape each these devices. These results...
<title>Abstract</title> Spanning over two decades, the study of qubits in semiconductors for quantum computing has yielded significant breakthroughs. However, development large-scale semiconductor circuits is still limited by challenges efficiently tuning and operating these circuits. Identifying optimal conditions complex, involving exploration vast parameter spaces. This presents a real `needle haystack' problem, which, until now, resisted complete automation due to device variability...
Radio frequency reflectometry techniques enable high bandwidth readout of semiconductor quantum dots. Careful impedance matching the resonant circuit is required to achieve sensitivity, which however proves challenging at cryogenic temperatures. Gallium arsenide-based voltage-tunable capacitors, so-called varactor diodes, can be used for in-situ tuning but deteriorate and fail temperatures below 10 K in magnetic fields. Here, we investigate a based on strontium titanate with hyperabrupt...