A5043540236- 2D Materials and Applications
- Photocathodes and Microchannel Plates
- Particle Detector Development and Performance
- Radiation Detection and Scintillator Technologies
- Topological Materials and Phenomena
- Chalcogenide Semiconductor Thin Films
- Dark Matter and Cosmic Phenomena
- Terahertz technology and applications
- Advanced Semiconductor Detectors and Materials
University of Chinese Academy of Sciences
2012-2024
Shanghai Institute of Technical Physics
2024
Guangxi University
2012-2013
Broadband room-temperature photodetection has become a pressing need as application requirements for communication, imaging, spectroscopy, and sensing have evolved. Topological insulators (TIs) narrow bandgap structures with wide absorption spectral response range, which should meet the of broadband detection. However, owing to their high carrier concentration low mobility resulting in poor noise equivalent power (NEP), they are generally considered unsuitable photodetection. Here, InBiTe
The performance of thinner-THGEMs (Thick Gaseous Electron Multipliers) with 0.2 mm thickness, hole diameter, 0.7 pitch and a narrow (5 ∼ 20 μm) rim has been studied. In general, the prototype gain 1 × 103 4 one single thinner-THGEM in Ar/iC4H10 (97:3) works stably at high rates. A curved parallax-free gas detector based on developed for diffraction studies, tested Beijing Synchrotron Radiation Facility (BSRF). result shows an angular resolution 0.148 degree can be achieved direct current...
THGEMs (THick Gas Electron Multiplier) of varying thickness, hole diameter and pitch have been studied. For a thinner-THGEM thickness 0.2 mm, with mm narrow (5-10 {\mu}m) rim, the performance gain versus high voltage different gas mixtures studied using 5.9 keV X-rays. In general, around 3\times10^3 was obtained single board in Ar/iC4H10, gains higher than 10^4 were Ne mixture at lower voltage. The dependence energy resolution on drift induction electric fields measured an 15.9% obtained. A...
With the demand for communication, imaging, spectroscopy, and other applications, broadband detection has always been a particularly popular direction. However, current photodetectors have problems of relatively narrow response bands, low sensitivity, slow speed, complex manufacturing processes. In this article, alloy material InBiSe3 is proposed to manufacture wideband photodetector from visible terahertz at room temperature. The noise equivalent power (NEP) detector 1.37 × 10−10 W Hz−1/2...