A5015937606- Advanced Memory and Neural Computing
- Photoreceptor and optogenetics research
- Physical Unclonable Functions (PUFs) and Hardware Security
- Conducting polymers and applications
- Neuroscience and Neural Engineering
- Neural Networks and Reservoir Computing
- Perovskite Materials and Applications
- Ferroelectric and Negative Capacitance Devices
- CCD and CMOS Imaging Sensors
Northeast Normal University
2021-2024
Abstract Spiking neural network (SNN), widely known as the third-generation network, has been frequently investigated due to its excellent spatiotemporal information processing capability, high biological plausibility, and low energy consumption characteristics. Analogous working mechanism of human brain, SNN system transmits through spiking action neurons. Therefore, artificial neurons are critical building blocks for constructing in hardware. Memristors drawing growing attention...
True random number generator (TRNG) that cannot be arbitrary attacked with predictable software algorithm is a promising data security solution. Memristors, possessing specific intrinsic stochasticity, are just appropriate to the sources for encryption applications. In this work, TRNG system based on stochastic duration time of double threshold-switching (TS) memristors proposed. The reliable stochasticity mainly attributed gradual dissolution Ag conductive channels and synergistic effect...
Leaky integrate and fire (LIF) neurons are critical units for constructing a spiking neural network, in which communicate with each other using spikes via synapses. Memristors, due to its specific nonlinear characteristics, frequently introduced emulate partial functions of LIF simplifying the circuit complexity, either integration process or action. Usually, relatively complicated peripheral needs be engineered assist memristive device complete emulation biological neurons, certainly would...
In this work, we demonstrate the coexistence of nonvolatile memory (NVM) and volatile threshold switching (VTS) behaviors in an Ag-embedded sodium-alginate-based memristor using current pulse mode. High low compliance currents allow device to present stable reliable NVM VTS behaviors, respectively. Specifically, randomly occur under a 40 μA. On basis, four polygon Boolean operations (AND, OR, NOT, XOR) physical unclonable functions (PUFs) with inter-class Hamming distance 50.75% are...
High switching fluctuation induced by the random formation and rupture of conductive filaments (CFs) is a critical issue for development organic-inorganic perovskite-based resistive (RS) memory devices. In this study, rapid microwave-annealing method developed to reduce grain boundaries (GBs) CH3NH3PbI3 (MAPbI3) film improve reliability Au/MAPbI3/FTO device. The crystal size MAPbI3 increased corresponding GBs number reduced with microwave irradiation time ranging from 40 120 s. optimized...
The intriguing properties of two-dimensional (2D) transition metal dichalcogenides (TMDCs) enable the exploration new electronic device architectures, particularly emerging memristive devices for in-memory computing applications. Implementation arithmetic logic operations taking advantage non-linear characteristics memristor can significantly improve energy efficiency and simplify complexity peripheral circuits. Herein, we demonstrate an unit function using a lateral volatile based on...