A5038295970- Advanced Thermoelectric Materials and Devices
- Thermal properties of materials
- Semiconductor materials and interfaces
- Physics of Superconductivity and Magnetism
- Cold Atom Physics and Bose-Einstein Condensates
- Thermal Radiation and Cooling Technologies
- Social and Demographic Issues in Germany
- nanoparticles nucleation surface interactions
- Real estate and construction management
- Optical and Acousto-Optic Technologies
- Nanowire Synthesis and Applications
- Quantum, superfluid, helium dynamics
- Rare-earth and actinide compounds
- Advanced Semiconductor Detectors and Materials
- Corporate Social Responsibility and Sustainability
- Silicon Nanostructures and Photoluminescence
- Material Dynamics and Properties
- Solid-state spectroscopy and crystallography
- Transition Metal Oxide Nanomaterials
Universität Hamburg
2024
Max Planck Institute for the Structure and Dynamics of Matter
2024
University of Duisburg-Essen
2003-2013
Phosphorus-doped silicon nanopowder from a gas phase process was compacted by DC-current sintering in order to obtain thermoelectrically active, nanocrystalline bulk silicon. A density between 95% and 96% compared the of single crystalline achieved, while preserving character with an average crystallite size best 25 nm. As native surface oxidation usually occurs during handling, focus this work is on role oxygen microstructure transport properties nanocomposite. characterization transmission...
It is shown that current-activated pressure-assisted densification (CAPAD) sensitive to the Peltier effect. Under CAPAD, effect leads a significant redistribution of heat within sample during densification. The highly p-doped silicon nanoparticles CAPAD and properties obtained samples are investigated experimentally by computer simulation. Both, simulation experiments, indicate clearly higher temperature on cathode side decreasing from center outer shell. Furthermore, simulations provide...
A nanoparticular p-n junction was realized by a field-assisted sintering process, using p-type and n-type doped silicon nanoparticles. spatially resolved Seebeck microscan showed broad transition from the positively to negatively range. Overshoots on both sides are characteristic for transition. Despite tip size being much larger than mean particle size, information about dopant distribution between particles is deduced modeling measured data under different assumptions, including limited...
We demonstrate the failure of adiabatic Born-Oppenheimer approximation to describe ground state a quantum impurity within an ultracold Fermi gas despite substantial mass differences between bath and species. Increasing repulsion leads appearance nonadiabatic couplings fast slow degrees freedom, which reduce parity symmetry latter according pseudo Jahn-Teller effect. The presence this mechanism is associated conical intersection involving position inverse interaction strength, acts as...
This note describes the construction and engineering of a high precision Harman set-up for metrology thermoelectric figure merit (ZT) modules materials based on steady state AC DC measurements. The technique presented in this article has resolution milli-ZT it does not employ lock-in amplifiers or bridges; rather, is developed to avoid typical complications experienced systems. By one-time reference measurements best operation point system chosen, minimizing effects capacitive loads due signals.
We demonstrate the failure of adiabatic Born-Oppenheimer approximation to describe ground state a quantum impurity within an ultracold Fermi gas despite substantial mass differences between bath and species. Increasing repulsion leads appearance non-adiabatic couplings fast slow degrees freedom which reduce parity symmetry latter according pseudo Jahn-Teller effect. The presence this mechanism is associated conical intersection involving position inverse interaction strength acts as...