A5015459476- Semiconductor Quantum Structures and Devices
- Quantum Dots Synthesis And Properties
- Chalcogenide Semiconductor Thin Films
- Advanced Semiconductor Detectors and Materials
- Semiconductor Lasers and Optical Devices
- Solid State Laser Technologies
- Quantum and electron transport phenomena
- Photonic and Optical Devices
- Semiconductor materials and devices
- Laser Design and Applications
- Semiconductor materials and interfaces
- Nanowire Synthesis and Applications
- Terahertz technology and applications
- solar cell performance optimization
- GaN-based semiconductor devices and materials
- 2D Materials and Applications
- Electronic and Structural Properties of Oxides
- Solid-state spectroscopy and crystallography
- Spectroscopy and Laser Applications
- Quantum Information and Cryptography
- Laser-Matter Interactions and Applications
- Electron and X-Ray Spectroscopy Techniques
- Plasmonic and Surface Plasmon Research
- Magnetic properties of thin films
- Advanced Optical Sensing Technologies
Ioffe Institute
2015-2024
Togliatti State University
2023
Federal Research Centre of Nutrition and Biotechnology
2023
Physico-Technical Institute
2005-2015
Russian Academy of Sciences
2005-2015
Osipyan Institute of Solid State Physics RAS
2014
Physical and Technical Institute
2009
A transmission electron microscopy (TEM) study of the structure and chemical composition 0.5 to 3.0 ML (monolayer) CdSe sheets that are buried in a ZnSe matrix is presented. The layers were grown by migration-enhanced epitaxy at growth temperature 280 \ifmmode^\circ\else\textdegree\fi{}C. We find two-dimensional (2D) ${\mathrm{Cd}}_{x}{\mathrm{Zn}}_{1\ensuremath{-}x}\mathrm{Se}$ with total thickness approximately 3 nm for all samples independent nominal content contain inclusions (islands)...
Single fractional monolayer (FM) CdSe/ZnSe structures have been grown by molecular beam epitaxy (MBE), employing both conventional MBE and migration-enhanced (MEE). A precise calibration of the FM mean thickness in range 0.15–3.0 ML has performed for techniques, revealing more than a 3.5 times lower Cd incorporation ability MEE mode at same Se incident fluxes. Steady-state time-resolved photoluminescence spectroscopy is used to characterize intrinsic morphology CdSe FMs, with special...
This letter reports on the self-organized growth of nanoscale dot-like CdSe-based islands during molecular beam epitaxy CdSe/ZnSe nanostructures with a CdSe thickness between 0.75 and 3.0 monolayers. An increase in nominal results higher density (up to 2×1010 cm−2) is accompanied by dramatic enhancement photoluminescence efficiency. The large relaxed appears saturate at value (3–4)×109 cm−2. Room temperature (Zn, Mg)(S, Se)-based optically pumped lasers an extremely low threshold (less than...
The electron spin coherence in n-doped and undoped, self-assembled CdSe/Zn(S,Se) quantum dots has been studied by time-resolved pump-probe Kerr rotation. Long-lived persisting up to 13 ns after orientation found the dots, outlasting significantly lifetimes of charge neutral negatively charged excitons 350 - 530 ps. dephasing time as long 5.6 measured a magnetic field 0.25 T. Hyperfine interaction resident electrons with nuclear fluctuations is suggested main limiting factor for time....
Development of molecular beam epitaxy (MBE) two-dimensional (2D) layered materials is an inevitable step in realizing novel devices based on 2D and heterostructures. However, due to existence numerous polytypes occurrence additional phases, the synthesis films remains a difficult task. This paper reports MBE growth GaSe, InSe, GaTe layers related heterostructures GaAs(001) substrates by using Se valve cracking cell group III metal effusion cells. The sophisticated self-consistent analysis...
We report on single photon emitters for the green-yellow spectral range, which comprise a CdSe/ZnSe quantum dot placed inside semiconductor tapered nanocolumn acting as multimode nanoantenna. Despite presence of many optical modes inside, such nanoantenna is able to collect radiation and ensure its effective output. demonstrate periodic arrays emitters, are fabricated by focused ion beam etching from II-VI/III-V heterostructure grown using molecular epitaxy. With non-resonant pumping,...
Heterostructures with InAs/InGaAs quantum dots grown by molecular beam epitaxy on the surface of InGaAs metamorphic buffer layers a linearly graded composition profile GaAs(001) substrates have been studied X-ray diffraction, transmission electron microscopy, and, upon growth an additional quantum-dot layer structure, atomic force microscopy. The tendency to formation objects elongated along [1–10] direction (so-called dashes), caused asymmetry in migration In different crystallographic...
Abstract Room temperature electron‐beam pumped ( U = 15–26 keV) green lasers and laser arrays based on multiple quantum well II–VI structures with an extended up to 2 µm waveguide have been studied. The maximum achieved output pulse power is as high 31 630 W per facet from a single 0.24‐mm‐wide element at the cavity length of 0.4 mm array consisting 26 elements, respectively.
We study the exciton magnetic polaron (EMP) formation in (Cd,Mn)Se/(Cd,Mg)Se diluted-magnetic-semiconductor quantum wells using time-resolved photoluminescence (PL). The field and temperature dependencies of this dynamics allow us to separate non-magnetic contributions localization. deduce EMP energy 14 meV, which is agreement with time-integrated measurements based on selective excitation dependence PL circular polarization degree. time 500 ps significantly longer than corresponding values...
Photoluminescence of excitons (X) and biexcitons (XX) from single neutral $\mathrm{CdSe}∕\mathrm{ZnSe}∕\mathrm{ZnMnSe}$ quantum dots (QDs) with various magnitudes $sp\text{\ensuremath{-}}d$ exchange interaction has been investigated in magnetic fields $B$ up to $10\phantom{\rule{0.3em}{0ex}}\mathrm{T}$ at $1.8\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. The magnitude the is varied by changing penetration exciton wave function ${\ensuremath{\psi}}_{X}$ into diluted semiconductor (DMS) barrier,...
Abstractauthoren We demonstrate that the selection of a limited number single excitonic lines from dense array epitaxial quantum dots (QDs) can be realized spectrally via resonant energy transfer huge small QDs toward set large nano-islands through their excited levels. Optical and transmission electron microscopy studies support this mechanism. Theoretical modeling describes architecture levels in CdSe/ZnSe QDs, which enables such spectral selection. Schematic between shown together with...
CdSe/CdMgSe quantum well heterostructures have been grown on InAs(001) substrates by molecular beam epitaxy. Their optical and structural properties are studied photoluminescence, transmission electron microscopy (TEM), probe microanalysis X-ray diffraction. A comparative analysis of two types heterovalent III–V/II–VI interfaces (InAs/CdSe InAs/ZnTe) their effect the CdMgSe layers discussed. Structures with InAs/ZnTe interface exhibit a much lower stacking fault density (below TEM detection...
We report on design, fabrication, and magneto-optical studies of a III-V/II-VI hybrid structure containing $\mathrm{Ga}\mathrm{As}∕\mathrm{Al}\mathrm{Ga}\mathrm{As}∕\mathrm{Zn}\mathrm{Se}∕\mathrm{Zn}\mathrm{Cd}\mathrm{Mn}\mathrm{Se}$ double quantum well (QW). The design allows one to tune the QW levels into resonance, thus facilitating penetration electron wave function from diluted magnetic semiconductor ZnCdMnSe nonmagnetic GaAs QW, vice versa. Magneto-photoluminescence demonstrate level...