A5103279178- Semiconductor materials and devices
- Advancements in Battery Materials
- Ferroelectric and Piezoelectric Materials
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- MXene and MAX Phase Materials
- Electron and X-Ray Spectroscopy Techniques
- Acoustic Wave Resonator Technologies
- Electronic and Structural Properties of Oxides
- Multiferroics and related materials
Pohang University of Science and Technology
2023-2024
Improving the structural stability of high-capacity high-Ni cathodes through doping has been investigated, but stabilization mechanisms dopants remain unclear. This study focused on unraveling influence individual dopants, Aluminium, Titanium, or Zirconium, cathodes. X-ray Diffraction and High-Angle Annular Dark-Field Scanning Transmission Electron Microscopy (HAADF-STEM) were employed for quantitative analysis cation mixing, first time, HAADF-STEM deep learning combined to improve accuracy...
Topological textures of ferroelectric polarizations have promise as alternative devices for future information technology. A polarization rotation inevitably deviates from the stable orientation in axial ferroelectrics, but local energy losses compromise global symmetry, resulting a distorted shape topological vortex or inhibiting vortex. Easy planar isotropy helps to promote rotating structures and, accordingly, facilitate access nontrivial textures. Here, we investigate domain structure an...
The discovery of ferroelectricity in hafnium oxide (HfO 2 ) [1] has driven great advances memory applications ferroelectrics over the past decade, with its stable a reduced dimension and high CMOS compatibility.To elucidate novel physical phenomena ferroelectric HfO , both experimental theoretical efforts have been made, including Integrated, Precession-Assisted, Analytical 4D-STEM Visit us learn more about our TESCAN TENSOR info.tescan.