Fumu Tachibana

ORCID: 0009-0006-0975-0635
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About
Contact & Profiles
Research Areas
  • MXene and MAX Phase Materials
  • Advanced Semiconductor Detectors and Materials
  • 2D Materials and Applications
  • Topological Materials and Phenomena
  • Semiconductor materials and devices
  • Semiconductor materials and interfaces

Osaka University
2024

The manipulation of the valley degree freedom can boost technological development novel functional devices based on valleytronics. current mainstream platform for valleytronics is to produce a monolayer with inversion asymmetry, in which strain-band engineering through substrates serve improve performance valley-based devices. However, pinpointing effective role strain inevitable precise design desired structure. Here, we demonstrate charge transport under continuously controllable external...

10.1103/physrevresearch.6.033096 article EN cc-by Physical Review Research 2024-07-23

The manipulation of the valley degree freedom can boost technological development novel functional devices based on valleytronics. current mainstream platform for valleytronics is to produce a monolayer with inversion asymmetry, in which strain-band engineering through substrates serve improve performance valley-based devices. However, pinpointing effective role strain inevitable precise design desired structure. Here, we demonstrate charge transport under continuously controllable external...

10.48550/arxiv.2309.05285 preprint EN cc-by arXiv (Cornell University) 2023-01-01
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